| Cadmium phosphide as a new material for infrared converters D Stepanchikov, S Shutov Semiconductor Physics Quantum Electronics & Optoelectronics, 2006 | 18 | 2006 |
| Light scattering of water under magnetic field VF Kovalenko, AY Bordyuk, SV Shutov Ukrainian journal of physical optics, 6-20, 2010 | 13 | 2010 |
| Investigation of the nature of light scattering by water VF Kovalenko, PG Levchenko, SV Shutov, AY Bordiuk Ukrainian journal of physical optics, 38-53, 2009 | 11 | 2009 |
| High temperature operation limit assessment for 4H-SiC Schottky diode-based extreme temperature sensors VA Krasnov, SV Shutov, SY Yerochin, OM Demenskyi IEEE Sensors Journal 19 (5), 1640-1644, 2018 | 10 | 2018 |
| Note: Determination of temperature dependence of GaP bandgap energy from diode temperature response characteristics VA Krasnov, SV Shutov, YM Shwarts, SY Yerochin Review of Scientific Instruments 82 (8), 2011 | 7 | 2011 |
| The Cluster Nature of Water Scattering VF Kovalenko, PG Levchenko, SV Shutov Biomedical Radio Electronics 5, 36-45, 2008 | 7 | 2008 |
| High temperature diode sensors based on InGaN/AlGaN structures VA Krasnov, SV Shutov, SY Yerochin, AN Demenskiy Journal of Vacuum Science & Technology B 36 (2), 2018 | 6 | 2018 |
| Yu. Interferential Effects in Scattering of Biological Liquids VF Kovalenko, SV Shutov, A Borduyk Biomedical Radio Electronics 8, 71-78, 2009 | 5 | 2009 |
| Effect of the charge carrier drift on emission spectrum of the graded band-gap semiconductors in the built-in quasi-electric field; Vliyanie drejfa nositelej zaryada vo … AI Bazyk, VF Kovalenko, AY Mironchenko, SV Shutov Fizika i Tekhnika Poluprovodnikov 35, 2001 | 5 | 2001 |
| Operational estimate of the impurity concentration in the emitter in designing npn drift transistors NA Samoilov, AN Frolov, SV Shutov Technical Physics Letters 22 (4), 281-282, 1996 | 5 | 1996 |
| LPE application technique for obtaining of thin film semiconductor compounds V Tsybulenko, S Shutov, S Yerochin Proceedings 2 (14), 1116, 2018 | 4 | 2018 |
| Determination of ultimate output characteristics of wide bandgap recombination-mode diode temperature sensors VA Krasnov, SV Shutov, YM Shwarts, SY Yerochin Sensing and Imaging 18, 1-9, 2017 | 4 | 2017 |
| Reducing the density of threading dislocations in GaAs epitaxial layers. Efficiency assessment of isovalent Bi doping and Pb doping YE Baganov, V Krasnov, O Lebed, S Shutov Materials Science-Poland 27 (2), 355-363, 2009 | 4 | 2009 |
| Edge-photoluminescence concentration dependence in semi-insulating undoped GaAs VF Kovalenko, MB Litvinova, SV Shutov Semiconductors 36, 167-170, 2002 | 4 | 2002 |
| Determination of the base thickness of a drift transistor by" punch-through" voltage. IE Maronchuk, AN Frolov, SV Shutov Radioelectronics and Communications Systems 44 (11), 46-49, 2001 | 4 | 2001 |
| Effect of the charge-carrier drift in a built-in quasi-electric field on the emission spectrum of the graded-gap semiconductors AI Bazyk, VF Kovalenko, AY Mironchenko, SV Shutov Semiconductors 35, 54-58, 2001 | 4 | 2001 |
| Temperature dependence of the lifetime of nonequilibrium charge carriers in GaP diodes under condition of recombination current domination VA Krasnov, SV Shutov, SY Yerochin Current Applied Physics 15 (4), 504-510, 2015 | 3 | 2015 |
| Size effect in two-photon absorption of recombination radiation in graded-gap AlxGa1−x As solid solutions VF Kovalenko, SV Shutov Semiconductors 37, 38-43, 2003 | 3 | 2003 |
| The effect of charge-carrier drift in the built-in quasi-electric field on the emission spectrum for graded-gap semiconductors VF Kovalenko, AY Mironchenko, SV Shutov Semiconductors 36, 185-188, 2002 | 3 | 2002 |
| Enhancing parameters of silicon varactors using laser gettering IM Vikulin, VN Litvinenko, SV Shutov, AI Maronchuk, AN Demenskiy, ... Технология и конструирование в электронной аппаратуре, 2018 | 2 | 2018 |
Sergey YerochinV.E. Lashkaryov Institute of Semiconductor Physics NAS of UkraineПідтверджена електронна адреса в isp.kiev.ua
