| Magnetic force microscopy of YLaFeO films implanted by high dose of nitrogen ions IM Fodchuk, II Gutsuliak, RA Zaplitniy, SV Balovsyak, IP Yaremiy, ... Semiconductor Physics Quantum Electronics & Optoelectronics, 2013 | 9 | 2013 |
| Magnetic force microscopy of YLaFeO films implanted by high dose of nitrogen ions IM Fodchuk, II Gutsuliak, RA Zaplitniy, SV Balovsyak, IP Yaremiy, ... Semiconductor Physics Quantum Electronics & Optoelectronics, 2013 | 9 | 2013 |
| X-ray topography of subsurface crystal layers Z Swiatek, I Fodchuk, R Zaplitnyy Journal of Applied Crystallography 50 (3), 727-733, 2017 | 8 | 2017 |
| Defect structure of high-resistivity CdTe: Cl crystals according to the data of high-resolution X-ray diffractometry I Fodchuk, A Kuzmin, I Hutsuliak, M Solodkyi, V Dovganyuk, ... Fourteenth International Conference on Correlation Optics 11369, 380-391, 2020 | 6 | 2020 |
| Structural changes in arsenic ion‐implanted Hg1–x Cdx Te epitaxial layers I Fodchuk, R Zaplitnyy, T Kazemirskiy, Z Swiatek physica status solidi (a) 204 (8), 2714-2720, 2007 | 4 | 2007 |
| The Influence of High-Dose Irradiation by N+ Ions on the Y2. 95La0. 05Fe5O12 Crystal Structure IM Fodchuk, II Gutsuliak, RA Zaplitnyy, IP Yaremiy, AY Bonchyk, ... Metallofizika i Noveishie Tekhnologii 35 (7), 993-1004, 2013 | 3 | 2013 |
| Reconstruction of lattice structure of ion-implanted near-surface regions of Hg1− XCdXTe epitaxial layers AP Vlasov, OY Bonchyk, SG Kiyak, IM Fodchuk, RM Zaplitnyy, ... Thin Solid Films 516 (22), 8106-8111, 2008 | 3 | 2008 |
| Исследование свойств Hg1-xyz CdxMnyZnzTe как нового материала оптоэлектроники для инфракрасного диапазона ИН Горбатюк, СЭ Остапов, СГ Дремлюженко, РА Заплитный, ... Физика и техника полупроводников 39 (9), 1053-1058, 2005 | 3 | 2005 |
| Structural changes in graded band-gap epitaxial layers HgCdTe after ion implantation RA Zaplitnyy, IM Fodchuk, TA Kazemirskiy, AP Vlasov, OY Bonchyk, ... Eighth International Conference on Correlation Optics 7008, 377-382, 2008 | 2 | 2008 |
| Solid state doping of CdxHg₁₋ xTe epitaxial layers with elements of V group AP Vlasov, AY Bonchyk, IM Fodchuk, A Barcz, ZT Swiatek, RA Zaplitnyy Semiconductor Physics Quantum Electronics & Optoelectronics, 2006 | 2 | 2006 |
| Applied Capabilities of X-Ray Topography of Crystals in the Skew-Asymmetric Bragg Diffraction IM Fodchuk, RA Zaplitnyy, YT Roman, VB Molodkin, TP Vladimirova, ... Metallofiz. Noveishie Tekhnol 40, 561-583, 2018 | 1 | 2018 |
| High-dose implantation of Y2, 95La0, 05Fe5O12 epitaxial films by nitrogen ions N Pashniak, I Fodchuk, A Davydok, A Biermanns, U Pietsch, S Balovsyak, ... Tenth International Conference on Correlation Optics 8338, 386-394, 2011 | 1 | 2011 |
| Structural changes in Si crystals exposed to chemical etching and ion implantation I Fodchuk, R Zaplitnyy, T Kazemirskiy, I Litvinchuk, Z Swiatek physica status solidi (a) 206 (8), 1804-1808, 2009 | 1 | 2009 |
| Влияние высокодозового облучения ионами N⁺ на кристаллическую структуру Y₂, ₉₅La₀, ₀₅Fe₅O₁₂ ИМ Фодчук, ИИ Гуцуляк, РА Заплитный, ИП Яремий, АЮ Бончик, ... Металлофизика и новейшие технологии, 2013 | | 2013 |
| Effect of combined action of chemical etching and ion implantation on structural and luminescent properties of Si crystals; Vliyanie kombinirovannogo vozdejstviya khimicheskogo … IV Litvinchuk, RA Zaplitnyj, TV Litvinchuk, IM Fodchuk | | 2007 |
| The controlled doping and structural homogeneity of CdHgTe epitaxial layers A Vlasov, O Bonchyk, I Fodchuk, R Zaplitnyy, A Barcz, Z Swiatek, ... Archives of Metallurgy and Materials 52 (4), 563, 2007 | | 2007 |
| HgCdMnZnTe: Growth and physical properties SE Ostapov, IN Gorbatyuk, SG Dremlyuzhenko, VV Zhikharevich, ... Journal of alloys and compounds 423 (1-2), 139-143, 2006 | | 2006 |
| Structural changes in the epitaxial structures modified by ion implantation RA Zaplitnyy, TA Kazemirsky, IM Fodchuk, Z Swiantek METALLOFIZIKA I NOVEISHIE TEKHNOLOGII 28 (8), 1013-1029, 2006 | | 2006 |
| X-Ray diffraction studies of radiation defects in CdTe single crystals and epitaxial layers OY Bonchyk, AP Vlasov, IM Fodchuk, RM Zaplitnyy, ZT Swiatek | | 2003 |
| Effect of double As ion implantation on structural properties of Hg1-xCdxTe epitaxial layers RA Zaplitnyj, TA Kazemirskij, IM Fodchuk, AY Bonchik, AP Vlasov | | |
Oleksandr BonchykInstitute for Applied Problem of Mechanics and MathematicsПідтверджена електронна адреса в iapmm.lviv.ua
