The Poisson Ratio in CoFe2O4 Spinel Thin Films M Foerster, M Iliev, N Dix, X Martí, M Barchuk, F Sánchez, J Fontcuberta Advanced Functional Materials 22 (20), 4344-4351, 2012 | 83 | 2012 |
X-ray diffuse scattering from threading dislocations in epitaxial GaN layers M Barchuk, V Holý, B Miljević, B Krause, T Baumbach, J Hertkorn, ... Journal of Applied Physics 108 (4), 2010 | 57 | 2010 |
Optical properties of epitaxial BiFeO3 thin films grown on LaAlO3 C Himcinschi, A Bhatnagar, A Talkenberger, M Barchuk, DRT Zahn, ... Applied Physics Letters 106 (1), 2015 | 56 | 2015 |
Correlation between the residual stress and the density of threading dislocations in GaN layers grown by hydride vapor phase epitaxy M Barchuk, C Röder, Y Shashev, G Lukin, M Motylenko, J Kortus, ... Journal of crystal growth 386, 1-8, 2014 | 27 | 2014 |
Diffuse x-ray scattering from stacking faults in a-plane GaN epitaxial layers M Barchuk, V Holý, D Kriegner, J Stangl, S Schwaiger, F Scholz Physical Review B 84 (9), 094113, 2011 | 27 | 2011 |
Asymmetrical reciprocal space mapping using X-ray diffraction: a technique for structural characterization of GaN/AlN superlattices HV Stanchu, AV Kuchuk, M Barchuk, YI Mazur, VP Kladko, ZM Wang, ... CrystEngComm 19 (22), 2977-2982, 2017 | 24 | 2017 |
High resolution synchrotron X-ray studies of phase separation phenomena and the scaling law for the threading dislocation densities reduction in high quality AlGaN heterostructure S Lazarev, S Bauer, K Forghani, M Barchuk, F Scholz, T Baumbach Journal of crystal growth 370, 51-56, 2013 | 24 | 2013 |
Structure and surface properties of chitosan/PEO/gelatin nanofibrous membrane M Barchuk, P Čapková, Z Kolská, J Matoušek, D Poustka, L Šplíchalová, ... Journal of Polymer Research 23, 1-7, 2016 | 21 | 2016 |
Investigation of GaN layers grown by high temperature vapor phase epitaxy G Lukin, C Röder, M Barchuk, G Schreiber, O Pätzold, J Kortus, D Rafaja, ... physica status solidi (c) 11 (3‐4), 491-494, 2014 | 19 | 2014 |
Density of bunched threading dislocations in epitaxial GaN layers as determined using X-ray diffraction M Barchuk, V Holý, D Rafaja Journal of Applied Physics 123 (16), 2018 | 18 | 2018 |
Study of threading dislocation density reduction in AlGaN epilayers by Monte Carlo simulation of high-resolution reciprocal-space maps of a two-layer system S Lazarev, M Barchuk, S Bauer, K Forghani, V Holý, F Scholz, ... Journal of Applied Crystallography 46 (1), 120-127, 2013 | 17 | 2013 |
Three-dimensional reciprocal space mapping of diffuse scattering for the study of stacking faults in semipolar (\bf 11 {\overline 2} 2) GaN layers grown from the sidewall of an … S Lazarev, S Bauer, T Meisch, M Bauer, I Tischer, M Barchuk, K Thonke, ... Journal of Applied Crystallography 46 (5), 1425-1433, 2013 | 15 | 2013 |
Effect of screw threading dislocations and inverse domain boundaries in GaN on the shape of reciprocal-space maps M Barchuk, M Motylenko, G Lukin, O Pätzold, D Rafaja Journal of applied crystallography 50 (2), 555-560, 2017 | 11 | 2017 |
Grazing-incidence x-ray diffraction from GaN epitaxial layers with threading dislocations M Barchuk, V Holý, B Miljević, B Krause, T Baumbach Applied Physics Letters 98 (2), 2011 | 11 | 2011 |
Contrasting magnetism in dilute and supersaturated cobalt–fullerene mixture films V Lavrentiev, A Stupakov, J Pokorný, I Lavrentieva, J Vacik, A Dejneka, ... Journal of Physics D: Applied Physics 48 (33), 335002, 2015 | 10 | 2015 |
Heteroepitaxial growth of GaN on sapphire substrates by high temperature vapor phase epitaxy G Lukin, T Schneider, M Förste, M Barchuk, C Schimpf, C Röder, ... Journal of Crystal Growth 524, 125185, 2019 | 8 | 2019 |
Modified high temperature vapor phase epitaxy for growth of GaN films G Lukin, T Schneider, M Barchuk, F Zimmermann, E Niederschlag, ... physica status solidi (a) 214 (9), 1600753, 2017 | 8 | 2017 |
Defect-rich GaN interlayer facilitating the annihilation of threading dislocations in polar GaN crystals grown on (0001)-oriented sapphire substrates M Barchuk, M Motylenko, T Schneider, M Förste, C Röder, A Davydok, ... Journal of Applied Physics 126 (8), 2019 | 7 | 2019 |
Effect of the ammonia flow on the formation of microstructure defects in GaN layers grown by high-temperature vapor phase epitaxy M Barchuk, G Lukin, F Zimmermann, C Röder, M Motylenko, O Pätzold, ... Journal of Electronic Materials 46, 1612-1619, 2017 | 7 | 2017 |
Phase evolution in mixture of cobalt and fullerene deposited from vapor V Lavrentiev, A Stupakov, M Barchuk, I Lavrentieva, J Pokorný, J Vacik, ... Carbon 103, 425-435, 2016 | 7 | 2016 |