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Dmytro Ivanovych Bletskan (Äìèòðî ²âàíîâè÷ Áëåöêàí)
Dmytro Ivanovych Bletskan (Äìèòðî ²âàíîâè÷ Áëåöêàí)
Doctor of Science, Professor, Uzhhorod National University, Physical Department, Ukraine, Uzhhorod
Verified email at uzhnu.edu.ua
Title
Cited by
Cited by
Year
Phase equilibrium in binary systems AIVBVI
DI Bletskan
J. Ovonic Res 1, 61-69, 2005
662005
Phase Equilibrium in the Systems AIV–BVI
DI Bletskan
J. Ovonic Res 1, 53-60, 2005
402005
Electronic structure of 2H-SnSe2: ab initio modeling and comparison with experiment
DI Bletskan, KE Glukhov, VV Frolova
Semiconductor physics, quantum electronics & optoelectronics, 98-108, 2016
282016
Switching effect in layer-like AIVBVI crystals
DI Bletskan, VI Taran, MU Sichka
Ukrainskii Fizichnii Zhurnal 21 (9), 1436-1441, 1976
241976
Glass formation in binary and ternary chalcogenide systems
DI Bletskan
Chalcogenide letters 3 (11), 81-119, 2006
222006
Crystalline and Glassy Chalcogenides of Si, Ge, Sn and Alloys Based on Them
DI Bletskan
Zakarpat’e, Uzhgorod, 2004
212004
Edge absorption spectra of crystalline and glassy PbGeS3
DI Bletskan, VN Kabacij, IP Studenyak, VV Frolova
Optics and Spectroscopy 103, 772-776, 2007
172007
Electrical and photoelectric properties of GeS layered crystals grown by different techniques
DI Bletskan, II Madyar, SV Mikulaninets, MY Sichka
Inorganic materials 36, 544-550, 2000
172000
Electronic structure of Sn2S3 compound with the mixed valency of tin
MM Bletskan, DI Bletskan
J. Optoelectron. Adv. Mater 16 (5-6), 659-664, 2014
152014
Structure and vibrational spectra of MIIAIVB3VI-type crystalline and glassy semiconductors
DI Bletskan, VN Kabacij, TA Sakal, VA Stefanovych
Journal of non-crystalline solids 326, 77-82, 2003
152003
PRODUCTION OF GES SINGLE-CRYSTALS, INVESTIGATION OF THEIR MORPHOLOGY AND OF LATTER INFLUENCE ON HOLOGRAM RECORDING
DI Bletskan, IF Kopinets, PP Pogoretskii, EN Salkova, DV Chepur
Kristallografiya 20 (5), 1008-1012, 1975
141975
Photoelectric properties of ordered-vacancy Ga2Se3 single crystals
DI Bletskan, VN Kabatsii, M Kranjčec
Inorganic Materials 46, 1290-1295, 2010
132010
Determining residual impurities in sapphire by means of electron paramagnetic resonance and nuclear activation analysis
DI Bletskan, VY Bratus’, AR Luk’yanchuk, VT Maslyuk, OA Parlag
Technical Physics Letters 34, 612-614, 2008
122008
Peculiarities of the absorption edge and photoconductivity spectra of (GeS2) x (Bi2S3) 1-x glasses
DI Bletskan, VN Kabatsiy, VV Frolova
Chalcogenide Letters 4 (10), 119-126, 2007
122007
Electronic structure of Ag8GeS6
DI Bletskan, IP Studenyak, VV Vakulchak, AV Lukach
Semiconductor physics, quantum electronics & optoelectronics, 19-25, 2017
112017
Raman and photoluminescence spectra of crystalline and glassy GeS2x Se2−2x solid solutions
DI Bletskan, EM Hryha, VN Kabatsii
Inorganic Materials 43, 105-111, 2007
102007
THE GROWTH MECHANISM OF THE LAYER-LIKE AND WIRE-LIKE CRYSTALS AIVBVI AND AIVB2 VI FROM GASEOUS PHASE.
DI Bletskan
Journal of Ovonic Research Vol 2 (6), 137-145, 2006
102006
Three Polymorphic Forms of GeSe 2 Crystals
DI Bletskan, VS Gerasikenko, MU Sichka
Kristallografiya 24 (1), 83-89, 1979
101979
Exciton absorption of germanium diselenide
SA Boiko, DI Bletskan, SF Terekhova
physica status solidi (b) 90 (1), K49-K52, 1978
101978
Photoconductivity and photoluminescence of PbGa2Se4 crystals
DI Bletskan, VM Kabatsii, M Kranichets, VV Frolova, EG Gule
Chalcogenide Letters 3 (12), 125-132, 2006
92006
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