| The COCAE detector: An instrument for localization—Identification of radioactive sources CP Lambropoulos, T Aoki, J Crocco, E Dieguez, C Disch, A Fauler, ... IEEE Transactions on Nuclear Science 58 (5), 2363-2370, 2011 | 36 | 2011 |
| Modification of the surface state and doping of CdTe and CdZnTe crystals by pulsed laser irradiation VA Gnatyuk, T Aoki, OI Vlasenko, SN Levytskyi, BK Dauletmuratov, ... Applied surface science 255 (24), 9813-9816, 2009 | 32 | 2009 |
| Mass transfer of indium in the In-CdTe structure under nanosecond laser irradiation VP Veleshchuk, A Baĭdullaeva, AI Vlasenko, VA Gnatyuk, ... Physics of the Solid State 52, 469-476, 2010 | 31 | 2010 |
| Laser-induced doping of CdTe crystals in different environments VA Gnatyuk, SN Levytskyi, OI Vlasenko, T Aoki Advanced Materials Research 222, 32-35, 2011 | 26 | 2011 |
| Mechanism of nano-cone formation on Cd0. 9Zn0. 1Te crystal by laser radiation A Medvid, A Mychko, V Gnatyuk, S Levytskyi, Y Naseka Optical Materials 32 (8), 836-839, 2010 | 25 | 2010 |
| Influence of nanosecond laser irradiation on optical properties of surface layers of CdTe crystals T Aoki, DV Gnatyuk, VA Odarych, LV Poperenko, IV Yurgelevych, ... Thin Solid Films 519 (9), 2834-2837, 2011 | 16 | 2011 |
| Doping of cadmium telluride by indium at nanosecond laser irradiation of In/CdTe structure V Veleschuk, A Vlasenko, E Gatskevich, V Gnatyuk, G Ivlev, S Levytskyi, ... Journal of Materials Science and Engineering B 2 (4), 230-239, 2012 | 14 | 2012 |
| Formation of doped nano-layers in CdTe semiconductor crystals by laser irradiation with nanosecond pulses VA Gnatyuk, SN Levytskyi, OI Vlasenko, T Aoki Thai J. Nanosci. Nanotechnol 1 (2), 7-16, 2016 | 13 | 2016 |
| Features of characteristics and stability of CdTe nuclear radiation detectors fabricated by laser doping technique VA Gnatyuk, T Aoki, OI Vlasenko, SN Levytskyi, Y Hatanaka, ... Hard X-Ray, Gamma-Ray, and Neutron Detector Physics X 7079, 117-125, 2008 | 11 | 2008 |
| Массоперенос индия в структуре In− CdTe при наносекундном лазерном облучении ВП Велещук, А Байдуллаева, АИ Власенко, ВА Гнатюк, ... Физика твердого тела 52 (3), 439-445, 2010 | 10 | 2010 |
| Laser-stimulated enhancement of semiconductor reflectance PO Gentsar, OI Vlasenko, SM Levytskyi, VA Gnatyuk Fiz. Khim. Tverd. Tila 15, 856, 2014 | 7 | 2014 |
| Surface processing of CdZnTe crystals VA Gnatyuk, OI Vlasenko, SN Levytskyi, E Dieguez, J Crocco, H Bensalah, ... Hard X-Ray, Gamma-Ray, and Neutron Detector Physics XIV 8507, 245-249, 2012 | 7 | 2012 |
| Capabilities of Laser-Induced Marks as Information Carriers Created in Different Materials. VA Gnatyuk, OI Vlasenko, SN Levytskyi, T Aoki, V Mizeikis, SV Gagarsky, ... Journal of Laser Micro/Nanoengineering 11 (2), 2016 | 6 | 2016 |
| Laser-stimulated processes in semiconductors PO Gentsar, SM Levytskyi Khim. Fiz. Tekhnol. Poverkhni 7, 186, 2016 | 6* | 2016 |
| Лазерно-стимульоване збільшення відбиваючої здатності напівпровідників ПО Генцарь, ОІ Власенко, СМ Левицький, ВА Гнатюк Фізика і хімія твердого тіла, 856-861, 2014 | 6 | 2014 |
| Mechanisms of mass transfer of indium in CdTe under nanosecond laser irradiation A Baidullaeva, VP Veleshchuk, OI Vlasenko, VA Gnatyuk, ... Ukr. J. Phys 56 (2), 168-174, 2011 | 5 | 2011 |
| Thermoelectric properties of PbSe and PbS compounds OI Vlasenko, SM Levytsky, A Krys’kov Ts, MP Kyselyuk Physics and Chemistry of Solid State 7 (4), 660, 2006 | 5 | 2006 |
| Dependence of the CdTe melting threshold on the pulse duration and wavelength of laser radiation and the parameters of non-equilibrium charge carriers VP Veleschuk, OI Vlasenko, ZK Vlasenko, VA Gnatyuk, SN Levytskyi Ukrainian journal of physics 62 (2), 159-159, 2017 | 4 | 2017 |
| Influence of laser radiation on optical properties of thin Ge1− 𝑥Si𝑥 near-surface layers PO Gentsar, OI Vlasenko, SM Levytskyi, IB Yanchuk, SP Lavoryk Fiz. Khim. Tverd. Tila 15, 303, 2014 | 4 | 2014 |
| CdTe diode detectors with a pn junction formed by laser-induced doping VA Gnatyuk, T Aoki, OI Vlasenko, SN Levytskyi 2011 IEEE Nuclear Science Symposium Conference Record, 4506-4509, 2011 | 4 | 2011 |
Volodymyr GnatyukV.E. Lashkaryov Institute of Semiconductor Physics of NASUVerified email at advafab.com
