| Dependence of the threshold voltage in indium-phosphide pore formation on the electrolyte composition YA Sychikova, VV Kidalov, GA Sukach Journal of Surface Investigation. X-ray, Synchrotron and Neutron Techniques …, 2013 | 46 | 2013 |
| Influence of dislocations on the process of pore formation in n-InP (111) single crystals YA Suchikova, VV Kidalov, GA Sukach Semiconductors 45 (1), 121-124, 2011 | 45 | 2011 |
| Influence of the carrier concentration of indium phosphide on the porous layer formation YA Suchikova, VV Kidalov, GA Sukach Journal of Nano-and Electronic Physics 2 (4), 142, 2010 | 43 | 2010 |
| Blue shift of photoluminescence spectrum of porous InP Y Suchikova, V Kidalov, G Sukach ECS Transactions 25 (24), 59, 2010 | 41 | 2010 |
| Preparation of nanoporous n-InP (100) layers by electrochemical etching in HCI solution JA Sychikova, VV Kidalov, GA Sukach Functional Materials, 2010 | 41 | 2010 |
| Influence of type anion of electrolit on morphology porous inp obtained by electrochemical etching YA Suchikova, VV Kidalov, GA Sukach Журнал нано-и электронной физики 1 (4), 78-86, 2009 | 30 | 2009 |
| Photoluminescent and structural properties of GaN thin films obtained by radical-beam gettering epitaxy on porous GaAs (0 0 1) VV Kidalov, GA Sukach, AO Petukhov, AS Revenko, EP Potapenko Journal of luminescence 102, 712-714, 2003 | 28 | 2003 |
| The mechanism of growth of GaN films by the HVPE method on SiC synthesized by the substitution of atoms on porous Si substrates SA Kukushkin, SS Sharofidinov, AV Osipov, AV Redkov, VV Kidalov, ... ECS Journal of Solid State Science and Technology 7 (9), P480, 2018 | 27 | 2018 |
| Properties of cubic GaN films obtained by nitridation of porous GaAs (001) VV Kidalov, GA Sukach, AS Revenko, AD Bayda physica status solidi (a) 202 (8), 1668-1672, 2005 | 26 | 2005 |
| Luminescence of native-defect p-type ZnO AN Georgobiani, MB Kotlyarevskii, VV Kidalov, LS Lepnev, IV Rogozin Inorganic materials 37, 1095-1098, 2001 | 23 | 2001 |
| Properties of SiC films obtained by the method of substitution of atoms on porous silicon VV Kidalov, SA Kukushkin, AV Osipov, AV Redkov, AS Grashchenko, ... ECS Journal of Solid State Science and Technology 7 (4), P158, 2018 | 21 | 2018 |
| Growth of SiC films by the method of substitution of atoms on porous Si (100) and (111) substrates VV Kidalov, SA Kukushkin, AV Osipov, AV Redkov, AS Grashchenko, ... | 21 | 2018 |
| Morphology of porous n InP (1) obtained by electrochemical etching in HCl solution JА Suchikova, VV Kidalov, GА Sukach Functional materials 17 (1), 1, 2010 | 21 | 2010 |
| Usage of porous indium phosphide as substrate for indium nitride films YA Suchikova, V Kidalov, A Konovalenko, GA Sukach ECS Transactions 33 (38), 73, 2011 | 18 | 2011 |
| Цифрова обробка аудіо-та відеоінформації у мультимедійних системах: Навчальний посібник ОВ Дробик, ВВ Кідалов, ВВ Коваль, БЯ Костік, ВС Лазебний, ... К.: Наукова думка, 2008 | 17 | 2008 |
| p-Type II–VI compounds doped by rare-earth elements AN Georgobiani, MB Kotljarevsky, VV Kidalov, IV Rogozin, UA Aminov Journal of crystal growth 214, 516-519, 2000 | 15 | 2000 |
| ZnO/ZnSe structures prepared by radical-beam getter epitaxy AN Georgobiani, MB Kotlyarevskii, VV Kidalov, LV Rogozin Inorganic Materials 33 (2), 185-188, 1997 | 15 | 1997 |
| Использование пористых соединений А3В5 для обкладок суперконденсатора АФ Дяденчук, ВВ Кидалов Журнал нано-та електронної фізики, 01021-1-01021-4, 2015 | 14 | 2015 |
| Films CdS Grown on porous Si Substrate A Diadenchuk, VV Kidalov | 13 | 2018 |
| n-ZnO: Al/porous-CdTe/p-CdTe heterostructures as photoelectric converters AF Diadenchuk, VV Kidalov Наносистеми, наноматеріали, нанотехнології 15 (3), 487-494, 2017 | 12 | 2017 |
Дяденчук Альона / Дяденчук А. Ф. / D...Таврійський державний агротехнологічний університет імені Дмитра Моторного / Dmytro Motornyi TavriaПодтвержден адрес электронной почты в домене tsatu.edu.ua
