| Optical and electrical studies of arsenic–implanted HgCdTe films grown with molecular beam epitaxy on GaAs and Si substrates II Izhnin, AV Voitsekhovsky, AG Korotaev, OI Fitsych, AY Bonchyk, ... Infrared Physics & Technology 81, 52-58, 2017 | 31 | 2017 |
| Inhomogeneous structure of near-surface layers in the ion-implanted NiTi alloy T Czeppe, N Levintant-Zayonts, Z Swiatek, M Michalec, O Bonchyk, ... Vacuum 83, S214-S219, 2009 | 26 | 2009 |
| Arsenic-ion implantation-induced defects in HgCdTe films studied with Hall-effect measurements and mobility spectrum analysis II Izhnin, KD Mynbaev, AV Voitsekhovsky, AG Korotaev, II Syvorotka, ... Infrared Physics & Technology 98, 230-235, 2019 | 25 | 2019 |
| Laser solid-phase doping of semiconductors AM Prokhorov, AY Bonchik, SG Kiyak, AA Manenkov, GN Mikhailova, ... Applied Surface Science 43 (1-4), 340-345, 1989 | 25 | 1989 |
| Laser doping in Si, InP and GaAs A Pokhmurska, O Bonchik, S Kiyak, G Savitski, A Gloskovsky Applied surface science 154, 712-715, 2000 | 24 | 2000 |
| Laser technology for submicron-doped layers formation in semiconductors AY Bonchik, SG Kijak, Z Gotra, W Proszak Optics & Laser Technology 33 (8), 589-591, 2001 | 17 | 2001 |
| Hall-effect studies of modification of HgCdTe surface properties with ion implantation and thermal annealing AG Korotaev, II Izhnin, KD Mynbaev, AV Voitsekhovskii, SN Nesmelov, ... Surface and Coatings Technology 393, 125721, 2020 | 15 | 2020 |
| The effect of built-in electric field on As diffusion in HgCdTe graded-band-gap epitaxial layers AP Vlasov, BS Sokolovskii, LS Monastyrskii, OY Bonchyk, A Barcz Thin Solid Films 459 (1-2), 28-31, 2004 | 15 | 2004 |
| Nano-size defects in arsenic-implanted HgCdTe films: a HRTEM study OY Bonchyk, HV Savytskyy, Z Swiatek, Y Morgiel, II Izhnin, ... Applied Nanoscience 9, 725-730, 2019 | 13 | 2019 |
| Electrical and microscopic characterization of p+-type layers formed in HgCdTe by arsenic implantation II Izhnin, KD Mynbaev, AV Voitsekhovskii, SN Nesmelov, SM Dzyadukh, ... Semiconductor Science and Technology 35 (11), 115019, 2020 | 11 | 2020 |
| Controlled arsenic diffusion in epitaxial CdxHg1− xTe layers in the evaporation–condensation–diffusion process A Vlasov, V Pysarevsky, O Storchun, A Shevchenko, A Bonchyk, ... Thin Solid Films 403, 144-147, 2002 | 11 | 2002 |
| Magnetic and structural changes in the near-surface epitaxial Y2.95La0.05Fe5O12 films after high-dose ion implantation IM Fodchuk, II Gutsuliak, VV Dovganiuk, AO Kotsyubynskiy, U Pietsch, ... Applied Optics 55 (12), B144-B149, 2016 | 10 | 2016 |
| High temperature arsenic doping of CdHgTe epitaxial layers A Vlasov, V Bogoboyashchyy, O Bonchyk, A Barcz Crystal Research and Technology: Journal of Experimental and Industrial …, 2004 | 10 | 2004 |
| Structural evolution of near-surface layers in NiTi alloy caused by an ion implantation Z Świątek, M Michalec, N Levintant-Zayonts, J Bonarski, A Budziak, ... Acta Physica Polonica. A 120 (1), 2011 | 9 | 2011 |
| Defects in Arsenic Implanted р+–n- and n+–p- Structures Based on MBE Grown CdHgTe Films II Izhnin, EI Fitsych, AV Voitsekhovskii, AG Korotaev, KD Mynbaev, ... Russian Physics Journal 60, 1752-1757, 2018 | 7 | 2018 |
| Magnetic force microscopy of YLaFeO films implanted by high dose of nitrogen ions IM Fodchuk, II Gutsuliak, RA Zaplitniy, SV Balovsyak, IP Yaremiy, ... Semiconductor Physics Quantum Electronics & Optoelectronics, 2013 | 7 | 2013 |
| Nano-size defect layers in arsenic-implanted and annealed HgCdTe epitaxial films studied with transmission electron microscopy OY Bonchyk, HV Savytskyy, II Izhnin, KD Mynbaev, II Syvorotka, ... Applied Nanoscience 10, 4971-4976, 2020 | 6 | 2020 |
| Direct comparison of the results of arsenic ion implantation in n–and p–type Hg0. 8Cd0. 2Te II Izhnin, KD Mynbaev, Z Swiatek, J Morgiel, AV Voitsekhovskii, ... Infrared Physics & Technology 109, 103388, 2020 | 6 | 2020 |
| TEM studies of structural defects in HgTe/HgCdTe quantum wells OY Bonchyk, HV Savytskyy, Z Swiatek, Y Morgiel, II Izhnin, ... Applied Nanoscience 10, 2867-2871, 2020 | 6 | 2020 |
| X-Ray diffractometry of lanthanum-doped iron-Yttrium garnet structures after ion implantation IM Fodchuk, VV Dovganiuk, II Gutsuliak, IP Yaremiy, AY Bonchyk, ... Metallofizika i Noveishie Tekhnologii 35 (9), 1209-1222, 2013 | 6 | 2013 |
Hrygoriy SavytskyyInstitute for Applied Problem of Mechanics and MathematicsПідтверджена електронна адреса в iapmm.lviv.ua
