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M. O. Manasreh
M. O. Manasreh
U of A
Verified email at uark.edu
Title
Cited by
Cited by
Year
Anomalous Hall-effect results in low-temperature molecular-beam-epitaxial GaAs: Hopping in a dense EL2-like band
DC Look, DC Walters, MO Manasreh, JR Sizelove, CE Stutz, KR Evans
Physical Review B 42 (6), 3578, 1990
3831990
Semiconductor heterojunctions and nanostructures
O Manasreh
McGraw-Hill, Inc., 2005
1922005
Infrared absorption of deep defects in molecular-beam-epitaxial GaAs layers grown at 200 C: Observation of an EL2-like defect
MO Manasreh, DC Look, KR Evans, CE Stutz
Physical Review B 41 (14), 10272, 1990
1641990
Semiconductor quantum wells and superlattices for long-wavelength infrared detectors
MO Manasreh
(No Title), 1993
1451993
Intersublevel infrared photodetector with strain-free GaAs quantum dot pairs grown by high-temperature droplet epitaxy
J Wu, D Shao, VG Dorogan, AZ Li, S Li, EA DeCuir Jr, MO Manasreh, ...
Nano letters 10 (4), 1512-1516, 2010
1272010
Temperature dependence of the band gap of colloidal CdSe∕ ZnS core/shell nanocrystals embedded into an ultraviolet curable resin
A Joshi, KY Narsingi, MO Manasreh, EA Davis, BD Weaver
Applied physics letters 89 (13), 2006
1192006
Optical absorption near the band edge in GaN grown by metalorganic chemical-vapor deposition
MO Manasreh
Physical Review B 53 (24), 16425, 1996
1051996
Surface plasmon enhanced intermediate band based quantum dots solar cell
J Wu, SC Mangham, VR Reddy, MO Manasreh, BD Weaver
Solar energy materials and solar cells 102, 44-49, 2012
992012
The EL2 defect in GaAs: Some recent developments
MO Manasreh, DW Fischer, WC Mitchel
Physica Status Solidi (Sectio) B: Basic Research;(German Democratic Republic …, 1989
931989
Multicolor photodetector based on GaAs quantum rings grown by droplet epitaxy
J Wu, Z Li, D Shao, MO Manasreh, VP Kunets, ZM Wang, GJ Salamo, ...
Applied Physics Letters 94 (17), 2009
912009
Origin of the blueshift in the intersubband infrared absorption in GaAs/Al 0.3 Ga 0.7 As multiple quantum wells
MO Manasreh, F Szmulowicz, T Vaughan, KR Evans, CE Stutz, ...
Physical Review B 43 (12), 9996, 1991
831991
Intersubband infrared absorption in a GaAs/Al0.3Ga0.7As quantum well structure
MO Manasreh, F Szmulowicz, DW Fischer, KR Evans, CE Stutz
Applied physics letters 57 (17), 1790-1792, 1990
781990
III-nitride semiconductors: electrical, structural and defects properties
MO Manasreh
Elsevier, 2000
772000
Intermediate-band material based on GaAs quantum rings for solar cells
J Wu, D Shao, Z Li, MO Manasreh, VP Kunets, ZM Wang, GJ Salamo
Applied Physics Letters 95 (7), 2009
742009
Ion-beam-produced damage and its stability in AlN films
SO Kucheyev, JS Williams, J Zou, C Jagadish, M Pophristic, S Guo, ...
Journal of applied physics 92 (7), 3554-3558, 2002
702002
Enhancement of GaAs solar cell performance by using a ZnO sol–gel anti-reflection coating
YF Makableh, R Vasan, JC Sarker, AI Nusir, S Seal, MO Manasreh
Solar Energy Materials and Solar Cells 123, 178-182, 2014
662014
Introduction to nanomaterials and devices
O Manasreh
John Wiley & Sons, 2011
652011
Negative persistent photoconductivity in the Al0.6Ga0.4Sb/InAs quantum wells
I Lo, WC Mitchel, MO Manasreh, CE Stutz, KR Evans
Applied physics letters 60 (6), 751-753, 1992
601992
Incorporation of carbon in heavily doped AlxGa1−xAs grown by metalorganic molecular beam epitaxy
CR Abernathy, SJ Pearton, MO Manasreh, DW Fischer, DN Talwar
Applied physics letters 57 (3), 294-296, 1990
571990
Strong interband transitions in InAs quantum dots solar cell
J Wu, YFM Makableh, R Vasan, MO Manasreh, B Liang, CJ Reyner, ...
Applied Physics Letters 100 (5), 2012
542012
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Articles 1–20