|Direct-bandgap GeSn grown on silicon with 2230 nm photoluminescence|
SA Ghetmiri, W Du, J Margetis, A Mosleh, L Cousar, BR Conley, ...
Applied Physics Letters 105 (15), 151109, 2014
|System and method for providing access to electronic works|
JW DeRose, AT Van Zoest, MJ DiMeo, BM Degenhardt, CL Sismondo, ...
US Patent 7,376,581, 2008
|Room-temperature electroluminescence from Ge/Ge1-xSnx/Ge diodes on Si substrates|
W Du, Y Zhou, SA Ghetmiri, A Mosleh, BR Conley, A Nazzal, RA Soref, ...
Applied Physics Letters 104 (24), 241110, 2014
|Temperature dependent spectral response and detectivity of GeSn photoconductors on silicon for short wave infrared detection|
BR Conley, A Mosleh, SA Ghetmiri, W Du, RA Soref, G Sun, J Margetis, ...
Optics express 22 (13), 15639-15652, 2014
|Competition of optical transitions between direct and indirect bandgaps in Ge1−xSnx|
W Du, SA Ghetmiri, BR Conley, A Mosleh, A Nazzal, RA Soref, G Sun, ...
Applied Physics Letters 105 (5), 051104, 2014
|Growth and characterization of epitaxial Ge1-XSnx alloys and heterostructures using a commercial CVD system|
J Margetis, SA Ghetmiri, W Du, BR Conley, A Mosleh, R Soref, G Sun, ...
ECS Transactions 64 (6), 711, 2014
|Material Characterization of Ge1−xSnx Alloys Grown by a Commercial CVD System for Optoelectronic Device Applications|
A Mosleh, SA Ghetmiri, BR Conley, M Hawkridge, M Benamara, A Nazzal, ...
Journal of electronic materials 43 (4), 938-946, 2014
|Si based GeSn photoconductors with a 1.63 A/W peak responsivity and a 2.4 μm long-wavelength cutoff|
BR Conley, J Margetis, W Du, H Tran, A Mosleh, SA Ghetmiri, J Tolle, ...
Applied Physics Letters 105 (22), 221117, 2014
|Si-based Ge0. 9Sn0. 1 photodetector with peak responsivity of 2.85 A/W and longwave cutoff at 2.4 μm|
TN Pham, W Du, BR Conley, J Margetis, G Sun, RA Soref, J Tolle, B Li, ...
Electronics letters 51 (11), 854-856, 2015
|Shortwave-infrared photoluminescence from Ge1−xSnx thin films on silicon|
SA Ghetmiri, W Du, BR Conley, A Mosleh, A Nazzal, G Sun, RA Soref, ...
Journal of Vacuum Science & Technology B, Nanotechnology and …, 2014
|Investigation on the formation and propagation of defects in GeSn thin films|
A Mosleh, M Benamara, SA Ghetmiri, BR Conley, MA Alher, W Du, G Sun, ...
ECS Transactions 64 (6), 895, 2014
|High efficiency MJ solar cells and TPV using SiGeSn materials|
BR Conley, H Naseem, G Sun, P Sharps, SQ Yu
2012 38th IEEE Photovoltaic Specialists Conference, 001189-001192, 2012
|Stability of pseudomorphic and compressively strained Ge1-XSnx thin films under rapid thermal annealing|
BR Conley, A Mosleh, SA Ghetmiri, W Du, G Sun, R Soref, J Margetis, ...
ECS Transactions 64 (6), 881, 2014
|Investigation of growth mechanism and role of H2 in very low temperature Si epitaxy|
A Mosleh, SA Ghetmiri, BR Conley, HH Abu-Safe, M Benamara, Z Waqar, ...
ECS Transactions 64 (6), 967-975, 2014
|Infrared spectral response of a GeSn pin photodiode on Si|
BR Conley, Y Zhou, A Mosleh, SA Ghetmiri, W Du, RA Soref, G Sun, ...
11th International Conference on Group IV Photonics (GFP), 17-18, 2014
|CVD growth of Ge1−xSnxusing large scale Si process for higher efficient multi-junction solar cells|
BR Conley, A Mosleh, SA Ghetmiri, HA Naseem, J Tolle, SQ Yu
2013 IEEE 39th Photovoltaic Specialists Conference (PVSC), 1346-1349, 2013
|Temperature-dependent characterization of G0. 94Sn0. 06 light-emitting diode grown on si via CVD|
SA Ghetmiri, W Du, Y Zhou, J Margetis, T Pham, A Mosleh, BR Conley, ...
CLEO: Applications and Technology, ATu1J. 6, 2015
|GeSn Devices for Short-Wave Infrared Optoelectronics|
|Nucleation-step study of silicon homoepitaxy for low-temperature fabrication of Si solar cells|
A Mosleh, SA Ghetmiri, BR Conley, H Abu-Safe, Z Waqar, M Benamara, ...
2013 IEEE 39th Photovoltaic Specialists Conference (PVSC), 2646-2650, 2013
|Enhanced responsivity up to 2.85 A/W of Si-based Ge0. 9Sn0. 1 photoconductors by integration of interdigitated electrodes|
T Pham, BR Conley, J Margetis, H Tran, SA Ghetmiri, A Mosleh, W Du, ...
CLEO: Science and Innovations, STh1I. 7, 2015