Band gap of CdTe and Cd0.9Zn0.1Te crystals LA Kosyachenko, VM Sklyarchuk, OV Sklyarchuk, OL Maslyanchuk Semiconductors 45, 1273-1280, 2011 | 50 | 2011 |
Electrical properties of electrodeposited CdTe photovoltaic devices on metallic substrates: study using small area Au–CdTe contacts LA Kosyachenko, X Mathew, VV Motushchuk, VM Sklyarchuk Solar Energy 80 (2), 148-155, 2006 | 49 | 2006 |
Surface-barrier p-CdTe-based photodiodes LA Kosyachenko, VM Sklyarchuk, YF Sklyarchuk, KS Ulyanitsky Semiconductor science and technology 14 (4), 373, 1999 | 43 | 1999 |
High energy resolution CdTe Schottky diode γ-ray detectors VLA Kosyachenko, T Aoki, CP Lambropoulos, VA Gnatyuk, EV Grushko, ... 2012 IEEE Nuclear Science Symposium and Medical Imaging Conference Record …, 2012 | 38 | 2012 |
Super high voltage Schottky diode with low leakage current for X-and γ-ray detector application LA Kosyachenko, VA Gnatyuk, T Aoki, VM Sklyarchuk, OF Sklyarchuk, ... Applied Physics Letters 94 (9), 2009 | 38 | 2009 |
Optimal width of barrier region in X/γ-ray Schottky diode detectors based on CdTe and CdZnTe LA Kosyachenko, T Aoki, CP Lambropoulos, VA Gnatyuk, SV Melnychuk, ... Journal of Applied Physics 113 (5), 2013 | 35 | 2013 |
Concentration of uncompensated impurities as a key parameter of CdTe and CdZnTe crystals for Schottky diode xγ-ray detectors LA Kosyachenko, CP Lambropoulos, T Aoki, E Dieguez, M Fiederle, ... Semiconductor science and technology 27 (1), 015007, 2011 | 34 | 2011 |
Higher voltage Ni/CdTe Schottky diodes with low leakage current LA Kosyachenko, VM Sklyarchuk, OF Sklyarchuk, OL Maslyanchuk, ... IEEE Transactions on Nuclear Science 56 (4), 1827-1834, 2009 | 33 | 2009 |
Charge collection properties of a CdTe Schottky diode for x-and γ-rays detectors LA Kosyachenko, OL Maslyanchuk, VA Gnatyuk, C Lambropoulos, ... Semiconductor science and technology 23 (7), 075024, 2008 | 33 | 2008 |
Charge transport generation-recombination mechanism in Au/n-CdZnTe diodes LA Kosyachenko, OL Maslyanchuk, VV Motushchuk, VM Sklyarchuk Solar energy materials and solar cells 82 (1-2), 65-73, 2004 | 32 | 2004 |
Low leakage current Ni/CdZnTe/In diodes for X/γ-ray detectors VM Sklyarchuk, VA Gnatyuk, W Pecharapa Nuclear Instruments and Methods in Physics Research Section A: Accelerators …, 2018 | 31 | 2018 |
Electrical characteristics of semi-insulating CdTe single crystals and CdTe Schottky diodes LA Kosyachenko, OL Maslyanchuk, VM Sklyarchuk, EV Grushko, ... J. Appl. Phys 101 (1), 013704-1, 2007 | 31 | 2007 |
Features of generation-recombination processes in CdTe-based Schottky diodes LA Kosyachenko, VM Sklyarchuk, OF Sklyarchuk, VA Gnatyuk Semiconductor science and technology 22 (8), 911, 2007 | 29 | 2007 |
ZnO‐based photodetector with internal photocurrent gain LA Kosyachenko, GV Lashkarev, VM Sklyarchuk, AI Ievtushenko, ... Physica status solidi (a) 207 (8), 1972-1977, 2010 | 28 | 2010 |
Ultraviolet detectors based on ZnO: N thin films with different contact structures A Ievtushenko, G Lashkarev, V Lazorenko, V Karpyna, V Sichkovskyi, ... Acta Physica Polonica A 114 (5), 1123-1129, 2008 | 25 | 2008 |
Special features of charge transport in Schottky diodes based on semi-insulating CdTe LA Kosyachenko, OL Maslyanchuk, VM Sklyarchuk Semiconductors 39, 722-729, 2005 | 22 | 2005 |
Hg3In2Te6‐based photodiodes for fiber optic communication LA Kosyachenko, IS Kabanova, VM Sklyarchuk, OF Sklyarchuk, ... physica status solidi (a) 206 (2), 351-355, 2009 | 20 | 2009 |
Electrical performance of HgInTe surface-barrier photodiodes LA Kosyachenko, YS Paranchich, VN Makogonenko, VM Sklyarchuk, ... Technical Physics 48, 647-650, 2003 | 20 | 2003 |
Electrical and photoelectric properties of Au–SiC Schottky barrier diodes LA Kosyachenko, VM Sklyarchuk, YF Sklyarchuk Solid-State Electronics 42 (1), 145-151, 1998 | 19 | 1998 |
Effect of nitrogen doping on photoresponsivity of ZnO films AI Ievtushenko, GV Lashkarev, VI Lazorenko, VA Karpyna, MG Dusheyko, ... physica status solidi (a) 207 (7), 1746-1750, 2010 | 18 | 2010 |