Two-dimensional hopping conductivity in a -doped heterostructure SI Khondaker, IS Shlimak, JT Nicholls, M Pepper, DA Ritchie
Physical Review B 59 (7), 4580, 1999
129 1999 An experimental determination of the critical exponents at the metal-insulator transition AN Ionov, IS Shlimak, MN Matveev
Solid state communications 47 (10), 763-766, 1983
91 1983 Method and device for non-contact detection of external electric or magnetic fields I Shlimak, V Sondomirsky, M Levin, A Kozlov
US Patent 6,664,708, 2003
79 2003 Neutron transmutation doping in semiconductors: science and applications IS Shlimak
Physics of the Solid State 41, 716-719, 1999
70 1999 Determination of the critical conductivity exponent for the metal-insulator transition at nonzero temperatures: universality of the transition I Shlimak, M Kaveh, R Ussyshkin, V Ginodman, L Resnick
Physical review letters 77 (6), 1103, 1996
58 1996 Isotopically engineered silicon/silicon-germanium nanostructures as basic elements for a nuclear spin quantum computer I Shlimak, VI Safarov, ID Vagner
Journal of Physics: Condensed Matter 13 (26), 6059, 2001
54 2001 Crossover phenomenon for hopping conduction in strong magnetic fields I Shlimak, M Kaveh, M Yosefin, M Lea, P Fozooni
Physical review letters 68 (20), 3076, 1992
54 1992 Superconductivity at room temperature in oxidized polypropylene VM Arkhangorodskiǐ, AN Ionov, VM Tuchkevich, IS Shlimak
Soviet Journal of Experimental and Theoretical Physics Letters 51, 67, 1990
52 1990 A doped highly compensated crystal semiconductor as a model of amorphous semiconductors SM Ryvkin, IS Shlimak
Physica status solidi (a) 16 (2), 515-526, 1973
48 1973 Is hopping a science?: selected topics of hopping conductivity I Shlimak
World Scientific, 2015
44 2015 The Influence of Local Potential Fluctuations on the Low‐Temperature Radiative Recombination of Compensated Germanium VP Dobrego, IS Shlimak
physica status solidi (b) 33 (2), 805-809, 1969
43 1969 Fluctuation-stimulated variable-range hopping VI Kozub, SD Baranovskii, I Shlimak
Solid state communications 113 (10), 587-591, 2000
40 2000 Temperature-induced smearing of the Coulomb gap: experiment and computer simulation I Shlimak, M Kaveh, R Ussyshkin, V Ginodman, SD Baranovskii, ...
Physical review letters 75 (26), 4764, 1995
40 1995 Raman scattering and electrical resistance of highly disordered graphene I Shlimak, A Haran, E Zion, T Havdala, Y Kaganovskii, AV Butenko, ...
Physical Review B 91 (4), 045414, 2015
38 2015 Influence of parallel magnetic fields on a single-layer two-dimensional electron system with a hopping mechanism of conductivity I Shlimak, SI Khondaker, M Pepper, DA Ritchie
Physical Review B 61 (11), 7253, 2000
38 2000 Variable‐Range Hopping in Neutron‐Transmutation‐Doped Gallium Arsenide R Rentzsch, KJ Friedland, AN Ionov, MN Matveev, IS Shlimak, C Gladun, ...
physica status solidi (b) 137 (2), 691-700, 1986
37 1986 Crossover phenomenon for two-dimensional hopping conductivity and density-of-states near the Fermi level SI Khondaker, IS Shlimak, JT Nicholls, M Pepper, DA Ritchie
Solid state communications 109 (12), 751-756, 1999
33 1999 HOPPING CONDUCTION IN GE BI SHKLOVSKY, IS Shlimak
SOV PHYS SEMICONDUCTORS 6 (1), 104-108, 1972
32 1972 Localization of charge carriers in monolayer graphene gradually disordered by ion irradiation E Zion, A Haran, AV Butenko, L Wolfson, Y Kaganovskii, T Havdala, ...
arXiv preprint arXiv:1501.04581, 2015
30 2015 HOPPING CONDUCTION IN GERMANIUM-SILICON SOLID SOLUTIONS. BL Gel'mont, AR Gadzhiev, BI Shklovskii, IS Shlimak, AL Efros
Sov Phys Semicond 8 (12), 1549-1553, 1975
30 1975