| Lifetime recovery in ultrahighly titanium-doped silicon for the implementation of an intermediate band material E Antolín, A Martí, J Olea, D Pastor, G González-Díaz, I Mártil, A Luque Applied Physics Letters 94 (4), 2009 | 171 | 2009 |
| Raman-scattering study of the InGaN alloy over the whole composition range S Hernández, R Cuscó, D Pastor, L Artús, KP O’Donnell, RW Martin, ... Journal of Applied Physics 98 (1), 2005 | 119 | 2005 |
| Titanium doped silicon layers with very high concentration J Olea, M Toledano-Luque, D Pastor, G González-Díaz, I Mártil Journal of Applied Physics 104 (1), 2008 | 103 | 2008 |
| Effect of long chain branching on linear-viscoelastic melt properties of polyolefins J Vega, M Aguilar, J Peón, D Pastor, J Martínez-Salazar e-Polymers 2 (1), 045, 2002 | 80 | 2002 |
| Sub-bandgap absorption in Ti implanted Si over the Mott limit J Olea, A Del Prado, D Pastor, I Mártil, G González-Díaz Journal of Applied Physics 109 (11), 2011 | 77 | 2011 |
| High quality Ti-implanted Si layers above the Mott limit J Olea, M Toledano-Luque, D Pastor, E San-Andrés, I Mártil, ... Journal of Applied Physics 107 (10), 2010 | 72 | 2010 |
| Room-temperature operation of a titanium supersaturated silicon-based infrared photodetector E García Hemme, R García Hernansanz, G González Díaz, J Olea Ariza, ... American Institute of Physics, 2014 | 66 | 2014 |
| Intermediate band mobility in heavily titanium-doped silicon layers G González Díaz, J Olea Ariza Elsevier Science BV, 2009 | 63 | 2009 |
| Two-layer Hall effect model for intermediate band Ti-implanted silicon J Olea, G González-Díaz, D Pastor, I Mártil, A Martí, E Antolín, A Luque Journal of Applied Physics 109 (6), 2011 | 58 | 2011 |
| Electronic transport properties of Ti-impurity band in Si J Olea, G González-Díaz, D Pastor, I Mártil Journal of Physics D: Applied Physics 42 (8), 085110, 2009 | 56 | 2009 |
| Simultaneous high crystallinity and sub-bandgap optical absorptance in hyperdoped black silicon using nanosecond laser annealing B Franta, D Pastor, HH Gandhi, PH Rekemeyer, S Gradečak, MJ Aziz, ... Journal of Applied Physics 118 (22), 2015 | 53 | 2015 |
| Sub-bandgap spectral photo-response analysis of Ti supersaturated Si E García-Hemme, R García-Hernansanz, J Olea, D Pastor, A Del Prado, ... Applied Physics Letters 101 (19), 2012 | 49 | 2012 |
| Insulator to metallic transition due to intermediate band formation in Ti-implanted silicon D Pastor, J Olea, A Del Prado, E García-Hemme, R García-Hernansanz, ... Solar Energy Materials and Solar Cells 104, 159-164, 2012 | 45 | 2012 |
| Experimental verification of intermediate band formation on titanium-implanted silicon H Castán, E Pérez, H García, S Dueñas, L Bailón, J Olea, D Pastor, ... Journal of Applied Physics 113 (2), 2013 | 42 | 2013 |
| Far infrared photoconductivity in a silicon based material: Vanadium supersaturated silicon E García Hemme, R García Hernansanz, G González Díaz, J Olea Ariza, ... Amer Inst Physics, 2013 | 38 | 2013 |
| Synthesis of Ge1− xSnx alloys by ion implantation and pulsed laser melting: Towards a group IV direct bandgap material TT Tran, D Pastor, HH Gandhi, LA Smillie, AJ Akey, MJ Aziz, JS Williams Journal of Applied Physics 119 (18), 2016 | 30 | 2016 |
| Crystal damage assessment of Be+-implanted GaN by UV Raman scattering D Pastor, J Ibanez, R Cuscó, L Artús, G Gonzalez-Diaz, E Calleja Semiconductor science and technology 22 (2), 70, 2006 | 29 | 2006 |
| Interstitial Ti for intermediate band formation in Ti-supersaturated silicon D Pastor, J Olea, A Muñoz-Martín, A Climent-Font, I Mártil, ... Journal of Applied Physics 112 (11), 2012 | 26 | 2012 |
| Low temperature intermediate band metallic behavior in Ti implanted Si J Olea, D Pastor, E García-Hemme, R García-Hernansanz, Á del Prado, ... Thin Solid Films 520 (21), 6614-6618, 2012 | 25 | 2012 |
| Suppression of ion-implantation induced porosity in germanium by a silicon dioxide capping layer TT Tran, HS Alkhaldi, HH Gandhi, D Pastor, LQ Huston, J Wong-Leung, ... Applied Physics Letters 109 (8), 2016 | 24 | 2016 |
