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Qingkai QIAN
Qingkai QIAN
College of Optoelectronic Engineering, Chongqing University
Verified email at cqu.edu.cn
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Cited by
Year
Interface Engineering of Monolayer MoS2/GaN Hybrid Heterostructure: Modified Band Alignment for Photocatalytic Water Splitting Application by Nitridation …
Z Zhang, Q Qian, B Li, KJ Chen
ACS applied materials & interfaces 10 (20), 17419-17426, 2018
2172018
The dependence of graphene Raman D-band on carrier density
J Liu, Q Li, Y Zou, Q Qian, Y Jin, G Li, K Jiang, S Fan
Nano letters 13 (12), 6170-6175, 2013
1692013
Tunable Properties of Novel Ga2O3 Monolayer for Electronic and Optoelectronic Applications
Y Liao, Z Zhang, Z Gao, Q Qian, M Hua
ACS applied materials & interfaces 12 (27), 30659-30669, 2020
902020
Normally-Off LPCVD-SiNx/GaN MIS-FET With Crystalline Oxidation Interlayer
M Hua, J Wei, G Tang, Z Zhang, Q Qian, X Cai, N Wang, KJ Chen
IEEE Electron Device Letters 38 (7), 929-932, 2017
822017
650-V double-channel lateral Schottky barrier diode with dual-recess gated anode
J Lei, J Wei, G Tang, Z Zhang, Q Qian, Z Zheng, M Hua, KJ Chen
IEEE Electron Device Letters 39 (2), 260-263, 2017
672017
Improved Gate Dielectric Deposition and Enhanced Electrical Stability for Single-Layer MoS2 MOSFET with an AlN Interfacial Layer
Q Qian, B Li, M Hua, Z Zhang, F Lan, Y Xu, R Yan, KJ Chen
Scientific reports 6, 27676-27676, 2016
562016
Strain-tunable III-nitride/ZnO heterostructures for photocatalytic water-splitting: A hybrid functional calculation
Z Zhang, B Huang, Q Qian, Z Gao, X Tang, B Li
Apl Materials 8 (4), 2020
492020
Trap-state-dominated suppression of electron conduction in carbon nanotube thin-film transistors
Q Qian, G Li, Y Jin, J Liu, Y Zou, K Jiang, S Fan, Q Li
ACS nano 8 (9), 9597-9605, 2014
452014
Defect Creation in WSe2 with Microsecond Photoluminescence Lifetime by Focused Ion Beam Irradiation
Q Qian, L Peng, NP Lopez, K Fujisawa, K Zhang, X Zhang, TH Choudhury, ...
Nanoscale 12 (3), 2047-2056, 2020
432020
Two-dimensional gallium oxide monolayer for gas-sensing application
J Zhao, X Huang, Y Yin, Y Liao, H Mo, Q Qian, Y Guo, X Chen, Z Zhang, ...
The Journal of Physical Chemistry Letters 12 (24), 5813-5820, 2021
422021
In Situ Resonant Raman Spectroscopy to Monitor the Surface Functionalization of MoS2 and WSe2 for High-k Integration: A First-Principles Study
Q Qian, Z Zhang, KJ Chen
Langmuir : the ACS Journal of Surfaces and Colloids 34 (8), 2882–2889, 2018
412018
Chirality-Dependent Second Harmonic Generation of MoS2 Nanoscroll with Enhanced Efficiency
Q Qian, R Zu, Q Ji, GS Jung, K Zhang, Y Zhang, MJ Buehler, J Kong, ...
ACS nano 14 (10), 13333-13342, 2020
372020
2D materials as semiconducting gate for field-effect transistors with inherent over-voltage protection and boosted ON-current
Q Qian, J Lei, J Wei, Z Zhang, G Tang, K Zhong, Z Zheng, KJ Chen
npj 2D Materials and Applications 3, 24, 2019
362019
Enhanced dielectric deposition on single-layer MoS2 with low damage using remote N2 plasma treatment
Q Qian, Z Zhang, M Hua, G Tang, J Lei, F Lan, Y Xu, R Yan, KJ Chen
Nanotechnology 28 (17), 175202, 2017
352017
Reverse-blocking normally-OFF GaN double-channel MOS-HEMT with low reverse leakage current and low ON-state resistance
J Lei, J Wei, G Tang, Z Zhang, Q Qian, Z Zheng, M Hua, KJ Chen
IEEE Electron Device Letters 39 (7), 1003-1006, 2018
332018
High quantum efficiency of stable Sb‐based perovskite‐like halides toward white light emission and flexible X‐ray imaging
Q Mo, Q Qian, Y Shi, W Cai, S Zhao, Z Zang
Advanced Optical Materials 10 (23), 2201509, 2022
312022
An interdigitated GaN MIS-HEMT/SBD normally-off power switching device with low ON-resistance and low reverse conduction loss
J Lei, J Wei, G Tang, Q Qian, M Hua, Z Zhang, Z Zheng, KJ Chen
2017 IEEE International Electron Devices Meeting (IEDM), 25.2. 1-25.2. 4, 2017
312017
Revealing the nitridation effects on gan surface by first-principles calculation and X-Ray/ultraviolet photoemission spectroscopy
Z Zhang, B Li, Q Qian, X Tang, M Hua, B Huang, KJ Chen
IEEE Transactions on Electron Devices 64 (10), 4036-4043, 2017
292017
Fabrication of all-carbon nanotube electronic devices on flexible substrates through CVD and transfer methods.
Y Zou, Q Li, J Liu, Y Jin, Q Qian, K Jiang, S Fan
Advanced Materials (Deerfield Beach, Fla.) 25 (42), 6050-6056, 2013
292013
Enhanced performance of graphene transistor with ion-gel top gate
J Liu, Q Qian, Y Zou, G Li, Y Jin, K Jiang, S Fan, Q Li
Carbon 68, 480-486, 2014
282014
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