Oleksandr Kondrat
Oleksandr Kondrat
Ужгородський національний університет, факультет інформаційних технологій
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Cited by
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Ab initio calculations and the effect of atomic substitution in the Raman spectra of As(Sb,Bi)2S3 films
O Kondrat, N Popovich, R Holomb, V Mitsa, O Petrachenkov, M Koós, ...
physica status solidi c 7 (3‐4), 893-896, 2010
Auger analysis and simulation of electronic states for Ge33As12Se55p‐Si heterojunction
TN Shchurova, ND Savchenko, AB Kondrat, II Opachko
Surface and Interface Analysis: An International Journal devoted to the …, 2006
Coherent Light Photo-modification, Mass Transport Effect, and Surface Relief Formation in AsxS100-x Nanolayers: Absorption Edge, XPS, and Raman …
O Kondrat, R Holomb, A Csik, V Takáts, M Veres, V Mitsa
Nanoscale Research Letters 12, 1-10, 2017
Synchrotron radiation photoelectron spectroscopy studies of self-organization in As40Se60 nanolayers stored under ambient conditions and after laser irradiation
O Kondrat, N Popovich, R Holomb, V Mitsa, V Lyamayev, N Tsud, V Cháb, ...
Journal of non-crystalline solids 358 (21), 2910-2916, 2012
Laser induced changes of As50Se50 nanolayers studied by synchrotron radiation photoelectron spectroscopy
O Kondrat, N Popovich, R Holomb, V Mitsa, V Lyamayev, N Tsud, V Cháb, ...
Thin Solid Films 520 (24), 7224-7229, 2012
Local surface structure and structural properties of As–Se nanolayers studied by synchrotron radiation photoelectron spectroscopy and DFT calculations
O Kondrat, R Holomb, N Popovich, V Mitsa, M Veres, A Csik, N Tsud, ...
Journal of Non-Crystalline Solids 410, 180-185, 2015
Simulation of the surface bending of energy band for binary chalcogenide semiconductors
TN Shchurova, ND Savchenko, AB Kondrat, KO Popovych, VM Rubish, ...
Photoelectronics, 104-107, 2008
In situ investigations of laser and thermally modified As2S3 nanolayers: synchrotron radiation photoelectron spectroscopy and density functional theory calculations
O Kondrat, R Holomb, N Popovich, V Mitsa, M Veres, A Csik, A Feher, ...
Journal of Applied Physics 118 (22), 2015
Deposition technique and external factors effect on Ge33As12Se55-Si heterostructure mechanical properties
ND Savchenko, TN Shchurova, ML Trunov, A Kondrat, V Onopko
Material Science and Material Properties for Infrared Optoelectronics 3182 …, 1997
Synchrotron XPS studies of illuminated and annealed flash evaporated a-Ge2S3 films
V Mitsa, R Holomb, O Kondrat, N Popovych, N Tsud, V Matolín, KC Prince, ...
Journal of non-crystalline solids 401, 258-262, 2014
Super-bandgap light stimulated reversible transformation and laser-driven mass transport at the surface of As2S3 chalcogenide nanolayers studied in situ
R Holomb, O Kondrat, V Mitsa, M Veres, A Czitrovszky, A Feher, N Tsud, ...
The Journal of Chemical Physics 149 (21), 2018
Structural investigation of As-Se chalcogenide thin films with different compositions: formation, characterization and peculiarities of volume and near-surface nanolayers.
O Kondrat, R Holomb, V Mitsa, M Veres, N Tsud
Funct. Mater. 24 (4), 547-554, 2017
Reversible structural changes of in situ prepared As 40 Se 60 nanolayers studied by XPS spectroscopy
OB Kondrat, RM Holomb, A Csik, V Takats, M Veres, A Feher, T Duchon, ...
Applied Nanoscience 9 (5), 917-924, 2019
Gold nanoparticle assisted synthesis and characterization of As–S crystallites: Scanning electron microscopy, X-ray diffraction, energy-dispersive X-ray and Raman spectroscopy …
R Holomb, O Kondrat, V Mitsa, A Mitsa, D Gevczy, D Olashyn, L Himics, ...
Journal of Alloys and Compounds 894, 162467, 2022
Calculation of Elastic Constants for Glasses
ND Savchenko, TN Shchurova, AB Kondrat, VM Mitsa
AIP Conference Proceedings 963 (2), 1363-1366, 2007
Charge transfer phenomenon in Ge33As12Se55-X-Si structures with nanolayer X: Sb; Bi; In; Pb
ND Savchenko, AB Kondrat, NI Dovgoshey, YI Bertsik
Functional Materials 6 (3), 432-435, 1999
The influence electrode material on charge transition in structures Si–Ge33As33Se55 investigation
NI Dovgoshey, OB Kondrat, ND Savchenko, J Sidor Yu
physics and chemistry of solid state 1 (1), 119-123, 2000
Nanolayers on the boundary of silicon-amorphous film of Ge-As-Se Type
NI Dovgoshey, ОВ Kondrat, RM Povch
Functional materials 6 (3), 437-442, 1999
Bands splitting in heterojunctions chalcogenide film–crystalline semiconductor
ND Savchenko, AB Kondrat, TN Shchurova, NI Dovgoshey
Proc. Ukr. Vac. Soc 8th Int. Symp. Thin Films in Electronics/eds. VG …, 1997
Structural studies of flash evaporated a-Ge (2) S (3) thin films nanolayers by high resolution X-ray-and synchrotron radiation photoelectron spectroscopy
S Petretskyi, R Holomb, V Mitsa, O Kondrat, N Popovych, G Lovas, V Loja
Видавництво УжНУ" Говерла", 2013
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