Jaroslaw Z. Domagala
Jaroslaw Z. Domagala
Institute of Physics, Polish Academy of Science, Warsaw, Poland
Підтверджена електронна адреса в ifpan.edu.pl
Назва
Посилання
Посилання
Рік
Influence of defects on the lattice constant of GaMnAs
J Sadowski, JZ Domagala
Physical Review B 69 (7), 075206, 2004
1052004
Electrical and optical properties of NiO films deposited by magnetron sputtering.
M Guziewicz, J Grochowski, M Borysiewicz, E Kaminska, JZ Domagala, ...
Optica Applicata 41 (2), 2011
902011
Structural and magnetic properties of GaMnAs layers with high Mn-content grown by migration-enhanced epitaxy on GaAs (100) substrates
J Sadowski, R Mathieu, P Svedlindh, JZ Domagała, J Bak-Misiuk, ...
Applied Physics Letters 78 (21), 3271-3273, 2001
792001
Structural and magnetic properties of molecular beam epitaxy grown GaMnAs layers
J Sadowski, JZ Domagała, J Bak-Misiuk, S Koleśnik, M Sawicki, ...
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer …, 2000
792000
Postgrowth annealing of (Ga,Mn) As under As capping: An alternative way to increase
M Adell, L Ilver, J Kanski, V Stanciu, P Svedlindh, J Sadowski, ...
Applied Physics Letters 86 (11), 112501, 2005
752005
The microstructure of gallium nitride monocrystals grown at high pressure
M Leszczynski, I Grzegory, H Teisseyre, T Suski, M Bockowski, J Jun, ...
Journal of crystal growth 169 (2), 235-242, 1996
731996
Effect of Mn interstitials on the lattice parameter of
I Kuryliszyn-Kudelska, JZ Domagała, T Wojtowicz, X Liu, E Łusakowska, ...
Journal of applied physics 95 (2), 603-608, 2004
662004
Observation of topological crystalline insulator surface states on (111)-oriented Pb 1− x Sn x Se films
CM Polley, P Dziawa, A Reszka, A Szczerbakow, R Minikayev, ...
Physical Review B 89 (7), 075317, 2014
602014
Misfit strain anisotropy in partially relaxed lattice-mismatched InGaAs/GaAs heterostructures
O Yastrubchak, T Wosiński, JZ Domagała, E Łusakowska, T Figielski, ...
Journal of Physics: Condensed Matter 16 (2), S1, 2003
492003
Relaxation of InGaN thin layers observed by X-ray and transmission electron microscopy studies
Z Liliental-Weber, M Benamara, J Washburn, JZ Domagala, J Bak-Misiuk, ...
Journal of electronic materials 30 (4), 439-444, 2001
452001
Monocrystalline zinc oxide films grown by atomic layer deposition
T Krajewski, G Łuka, B Witkowski, B Kowalski, K Kopalko, JZ Domagala, ...
Thin Solid Films 518 (16), 4556-4559, 2010
442010
Monocrystalline ZnO films on GaN/Al2O3 by atomic layer epitaxy in gas flow
K Kopalko, M Godlewski, JZ Domagala, E Lusakowska, R Minikayev, ...
Chemistry of materials 16 (8), 1447-1450, 2004
422004
Thermal properties of CaNdAlO4 and SrLaAlO4 single crystals
P Byszewski, J Domagała, J Fink-Finowicki, A Pajaczkowska
Materials research bulletin 27 (4), 483-490, 1992
411992
Thermal expansion of bulk and homoepitaxial GaN
V Kirchner, H Heinke, D Hommel, JZ Domagala, M Leszczynski
Applied Physics Letters 77 (10), 1434-1436, 2000
362000
Lattice dilation by free electrons in heavily doped GaAs: Si
M Leszczynski, J Bak‐Misiuk, J Domagala, J Muszalski, M Kaniewska, ...
Applied physics letters 67 (4), 539-541, 1995
361995
High-pressure high-temperature annealing of ion-implanted GaN films monitored by visible and ultraviolet micro-Raman scattering
M Kuball, JM Hayes, T Suski, J Jun, M Leszczynski, J Domagala, HH Tan, ...
Journal of Applied Physics 87 (6), 2736-2741, 2000
352000
Structural properties of 10 μm thick InN grown on sapphire (0001)
E Dimakis, JZ Domagala, A Delimitis, P Komninou, A Adikimenakis, ...
Superlattices and Microstructures 40 (4-6), 246-252, 2006
342006
Lattice constant of doped semiconductor
M Leszczyński, E Litwin-Staszewska, T Suski, J Bąk-Misiuk, J Domagała
Acta Physica Polonica A 88 (5), 837-840, 1995
341995
Ferromagnetic GaMnAs/GaAs superlattices—MBE growth and magnetic properties
J Sadowski, R Mathieu, P Svedlindh, M Karlsteen, J Kanski, Y Fu, ...
Thin Solid Films 412 (1-2), 122-128, 2002
322002
Lattice parameter, microhardness and energy gap of bulk Zn1− xBexSe alloys
W Paszkowicz, K Godwod, J Domagała, F Firszt, J Szatkowski, ...
Solid state communications 107 (12), 735-740, 1998
321998
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