| Quantum dot emission driven by Mie resonances in silicon nanostructures V Rutckaia, F Heyroth, A Novikov, M Shaleev, M Petrov, J Schilling Nano letters 17 (11), 6886-6892, 2017 | 172 | 2017 |
| Microscopic and optical investigation of Ge nanoislands on silicon substrates ZF Krasil'nik, P Lytvyn, DN Lobanov, N Mestres, AV Novikov, J Pascual, ... Nanotechnology 13 (1), 81, 2002 | 67 | 2002 |
| Self-organization of germanium nanoislands obtained in silicon by molecular-beam epitaxy VY Aleshkin, NA Bekin, NG Kalugin, ZF Krasil’nik, AV Novikov, ... Journal of Experimental and Theoretical Physics Letters 67, 48-53, 1998 | 58 | 1998 |
| Photonic bound states in the continuum in Si structures with the self‐assembled Ge nanoislands SA Dyakov, MV Stepikhova, AA Bogdanov, AV Novikov, DV Yurasov, ... Laser & Photonics Reviews 15 (7), 2000242, 2021 | 54 | 2021 |
| SiGe nanostructures with self-assembled islands for Si-based optoelectronics ZF Krasilnik, AV Novikov, DN Lobanov, KE Kudryavtsev, AV Antonov, ... Semiconductor science and technology 26 (1), 014029, 2010 | 54 | 2010 |
| Observation of the electron-hole liquid in Si 1− x Ge x/Si quantum wells by steady-state and time-resolved photoluminescence measurements VS Bagaev, VS Krivobok, SN Nikolaev, AV Novikov, EE Onishchenko, ... Physical Review B 82 (11), 115313, 2010 | 53 | 2010 |
| Growth and photoluminescence of self-assembled islands obtained during the deposition of Ge on a strained SiGe layer DN Lobanov, AV Novikov, NV Vostokov, YN Drozdov, AN Yablonskiy, ... Optical Materials 27 (5), 818-821, 2005 | 49 | 2005 |
| Monolithically integrated InGaAs/GaAs/AlGaAs quantum well laser grown by MOCVD on exact Ge/Si (001) substrate VY Aleshkin, NV Baidus, AA Dubinov, AG Fefelov, ZF Krasilnik, ... Applied Physics Letters 109 (6), 2016 | 46 | 2016 |
| Antimony segregation in Ge and formation of n-type selectively doped Ge films in molecular beam epitaxy DV Yurasov, AV Antonov, MN Drozdov, VB Schmagin, KE Spirin, ... Journal of Applied Physics 118 (14), 2015 | 39 | 2015 |
| Light emission from Ge (Si)/SOI self-assembled nanoislands embedded in photonic crystal slabs of various periods with and without cavities MV Stepikhova, AV Novikov, AN Yablonskiy, MV Shaleev, DE Utkin, ... Semiconductor Science and Technology 34 (2), 024003, 2019 | 36 | 2019 |
| Raman spectroscopy and electroreflectance studies of self-assembled SiGe nanoislands grown at various temperatures MY Valakh, RY Holiney, VN Dzhagan, ZF Krasil’nik, OS Lytvyn, ... Physics of the Solid State 47, 54-57, 2005 | 34 | 2005 |
| Condensation of excitons and the spectrum of multiparticle states in SiGe/Si quantum wells: The role of the barrier in the conduction band VS Bagaev, VS Krivobok, SN Nikolaev, EE Onishchenko, ML Skorikov, ... JETP letters 94, 63-67, 2011 | 33 | 2011 |
| Low-energy photoluminescence of structures with GeSi/Si (001) self-assembled nanoislands NV Vostokov, YN Drozdov, ZF Krasil’nik, DN Lobanov, AV Novikov, ... Journal of Experimental and Theoretical Physics Letters 76, 365-369, 2002 | 32 | 2002 |
| Towards the indium nitride laser: Obtaining infrared stimulated emission from planar monocrystalline InN structures BA Andreev, KE Kudryavtsev, AN Yablonskiy, DN Lobanov, PA Bushuykin, ... Scientific Reports 8 (1), 9454, 2018 | 31 | 2018 |
| Strain-driven alloying: effect on sizes, shape and photoluminescence of GeSi/Si (001) self-assembled islands AV Novikov, BA Andreev, NV Vostokov, YN Drozdov, ZF Krasilnik, ... Materials Science and Engineering: B 89 (1-3), 62-65, 2002 | 31 | 2002 |
| Упругие напряжения и состав самоорганизующихся наноостровков GeSi на Si (001) НВ Востоков, СА Гусев, ИВ Долгов, ЮН Дроздов, ЗФ Красильник, ... Физика и техника полупроводников 34 (1), 8-12, 2000 | 31 | 2000 |
| Usage of antimony segregation for selective doping of Si in molecular beam epitaxy DV Yurasov, MN Drozdov, AV Murel, MV Shaleev, ND Zakharov, ... Journal of Applied Physics 109 (11), 2011 | 30 | 2011 |
| Gigantic uphill diffusion during self-assembled growth of Ge quantum dots on strained SiGe sublayers MY Valakh, PM Lytvyn, AS Nikolenko, VV Strelchuk, ZF Krasilnik, ... Applied Physics Letters 96 (14), 2010 | 30 | 2010 |
| Impact of growth and annealing conditions on the parameters of Ge/Si (001) relaxed layers grown by molecular beam epitaxy DV Yurasov, AI Bobrov, VM Daniltsev, AV Novikov, DA Pavlov, ... Semiconductors 49, 1415-1420, 2015 | 28 | 2015 |
| MOCVD growth of InGaAs/GaAs/AlGaAs laser structures with quantum wells on Ge/Si substrates N Baidus, V Aleshkin, A Dubinov, K Kudryavtsev, S Nekorkin, A Novikov, ... Crystals 8 (8), 311, 2018 | 24 | 2018 |
Zakhary Krasilnik, Z.F. Krasilnik, Z.F. K...Институт физики микроструктур РАН, Институт прикладной физики РАН, Институт прикладной физики АНПідтверджена електронна адреса в ipmras.ru
