| Limiting characteristics of diode temperature sensors YM Shwarts, VL Borblik, NR Kulish, EF Venger, VN Sokolov Sensors and Actuators A: Physical 86 (3), 197-205, 2000 | 41 | 2000 |
| Silicon diode temperature sensor without a kink of the response curve in cryogenic temperature region YM Shwarts, VL Borblik, NR Kulish, VN Sokolov, MM Shwarts, EF Venger Sensors and Actuators A: Physical 76 (1-3), 107-111, 1999 | 36 | 1999 |
| Revealing the hopping mechanism of conduction in heavily doped silicon diodes VL Borblik, YM Shwarts, MM Shwarts Semiconductor Physics Quantum Electronics & Optoelectronics, 2005 | 14 | 2005 |
| A new method of extraction of a pn diode series resistance from IV characteristics and its application to analysis of low-temperature conduction of the diode base VL Borblik, YM Shwarts, MM Shwarts Semiconductor Physics Quantum Electronics & Optoelectronics, 2009 | 9 | 2009 |
| Effect of Circular p-n Junction Curvature on the Diode Current Density V Borblik Journal of Electronic Materials 45, 4117-4121, 2016 | 8 | 2016 |
| Concerning the nature of relaxation oscillations in silicon diodes in the cryogenic temperature region VL Borblik, YM Shwarts, MM Shwarts, AM Fonkich Cryogenics 50 (6-7), 417-420, 2010 | 8 | 2010 |
| Self-consistent method for optimization of parameters of diode temperature sensors NR Kulish, YM Shwarts, VL Borblik, YF Venger, VN Sokolov Semiconductor Physics Quantum Electronics & Optoelectronics, 1999 | 8 | 1999 |
| Manifestation of disorder effects in the excess tunnel current of heavily doped silicon diodes VL Borblik, YM Shwarts, MM Shwarts Bulletin of the Russian Academy of Sciences: Physics 71, 1073-1075, 2007 | 5 | 2007 |
| Electrostatics of nanowire radial p–n heterojunctions V Borblik Journal of Electronic Materials 47 (7), 4022-4027, 2018 | 4 | 2018 |
| Concerning the depletion width of a radial pn junction and its influence on electrical properties of the diode VL Borblik Semiconductor physics, quantum electronics & optoelectronics, 168-172, 2017 | 4 | 2017 |
| Negative magnetoresistance of heavily doped silicon pn junction VL Borblik, IA Rudnev, YM Shwarts, MM Shwarts Semiconductor Physics Quantum Electronics & Optoelectronics, 2011 | 4 | 2011 |
| About manifestation of the piezojunction effect in diode temperature sensors VL Borblik, YM Shwarts, EF Venger Semiconductor Physics Quantum Electronics & Optoelectronics, 2003 | 4 | 2003 |
| Effect of mechanical stress on operation of diode temperature sensors VL Borblik, YM Shwarts, EF Venger Semiconductor Physics Quantum Electronics & Optoelectronics, 2002 | 4 | 2002 |
| Electrostatics of the nanowire radial pin diode VL Borblik Semiconductor physics, quantum electronics & optoelectronics 22 (2), 201-205, 2019 | 3 | 2019 |
| Characteristics of diode temperature sensors which exhibit Mott conduction in low temperature region VL Borblik, YM Shwarts, MM Shwarts Semiconductor Physics Quantum Electronics & Optoelectronics, 2007 | 3 | 2007 |
| Depletion length in semiconductor nanostructures with spherical symmetry VL Borblik Solid-State Electronics 114, 171-173, 2015 | 2 | 2015 |
| Determination of ‘bisotropic’stresses in layered semiconductor structures from Raman light scattering data VL Borblik Journal of Physics: Condensed Matter 19 (45), 456219, 2007 | 2 | 2007 |
| On limitingly high temperature measurable by diode sensor YM Shwarts, NR Kulish, VL Borblik, EF Venger ASDAM'98. Conference Proceedings. Second International Conference on …, 1998 | 2 | 1998 |
| Theory of the field effect in a tunnel-resonant heterostructure with selective scattering VL Borblik, ZS GRIGNIKOV, BP Markevich Soviet physics. Semiconductors 25 (8), 786-793, 1991 | 2 | 1991 |
| Slow and rapid motions of domain walls in a multivalley semiconductor VL Borblik, ZS Gribnikov Soviet Journal of Experimental and Theoretical Physics Letters 47, 371, 1988 | 2 | 1988 |
