Підписатись
Wei Dou
Wei Dou
Підтверджена електронна адреса в email.uark.edu
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Посилання
Посилання
Рік
An optically pumped 2.5 μm GeSn laser on Si operating at 110 K
S Al-Kabi, SA Ghetmiri, J Margetis, T Pham, Y Zhou, W Dou, B Collier, ...
Applied Physics Letters 109 (17), 2016
2392016
Si-based GeSn lasers with wavelength coverage of 2–3 μm and operating temperatures up to 180 K
J Margetis, S Al-Kabi, W Du, W Dou, Y Zhou, T Pham, P Grant, S Ghetmiri, ...
ACs Photonics 5 (3), 827-833, 2017
1912017
Si-based GeSn photodetectors toward mid-infrared imaging applications
H Tran, T Pham, J Margetis, Y Zhou, W Dou, PC Grant, JM Grant, ...
ACS Photonics 6 (11), 2807-2815, 2019
1572019
Optically pumped GeSn lasers operating at 270 K with broad waveguide structures on Si
Y Zhou, W Dou, W Du, S Ojo, H Tran, SA Ghetmiri, J Liu, G Sun, R Soref, ...
Acs Photonics 6 (6), 1434-1441, 2019
1302019
Investigation of GeSn strain relaxation and spontaneous composition gradient for low-defect and high-Sn alloy growth
W Dou, M Benamara, A Mosleh, J Margetis, P Grant, Y Zhou, S Al-Kabi, ...
Scientific reports 8 (1), 5640, 2018
1242018
Systematic study of GeSn heterostructure-based light-emitting diodes towards mid-infrared applications
Y Zhou, W Dou, W Du, T Pham, SA Ghetmiri, S Al-Kabi, A Mosleh, M Alher, ...
Journal of Applied Physics 120 (2), 2016
882016
Optically pumped lasing at 3 μm from compositionally graded GeSn with tin up to 22.3%
W Dou, Y Zhou, J Margetis, SA Ghetmiri, S Al-Kabi, W Du, J Liu, G Sun, ...
Optics letters 43 (19), 4558-4561, 2018
762018
Study of low-defect and strain-relaxed GeSn growth via reduced pressure CVD in H2 and N2 carrier gas
J Margetis, A Mosleh, S Al-Kabi, SA Ghetmiri, W Du, W Dou, M Benamara, ...
Journal of Crystal Growth 463, 128-133, 2017
642017
All group-IV SiGeSn/GeSn/SiGeSn QW laser on Si operating up to 90 K
J Margetis, Y Zhou, W Dou, PC Grant, B Alharthi, W Du, A Wadsworth, ...
Applied Physics Letters 113 (22), 2018
552018
Study of a SiGeSn/GeSn/SiGeSn structure toward direct bandgap type-I quantum well for all group-IV optoelectronics
SA Ghetmiri, Y Zhou, J Margetis, S Al-Kabi, W Dou, A Mosleh, W Du, ...
Optics Letters 42 (3), 387-390, 2017
522017
Fundamentals of Ge1− xSnx and SiyGe1− x-ySnx RPCVD epitaxy
J Margetis, A Mosleh, SA Ghetmiri, S Al-Kabi, W Dou, W Du, N Bhargava, ...
Materials Science in Semiconductor Processing 70, 38-43, 2017
492017
Optical Characterization of Si-Based Ge1−x Sn x Alloys with Sn Compositions up to 12%
S Al-Kabi, SA Ghetmiri, J Margetis, W Du, A Mosleh, M Alher, W Dou, ...
Journal of Electronic Materials 45, 2133-2141, 2016
402016
UHV-CVD growth of high quality GeSn using SnCl4: from material growth development to prototype devices
PC Grant, W Dou, B Alharthi, JM Grant, H Tran, G Abernathy, A Mosleh, ...
Optical Materials Express 9 (8), 3277-3291, 2019
342019
Direct bandgap type-I GeSn/GeSn quantum well on a GeSn-and Ge-buffered Si substrate
PC Grant, J Margetis, Y Zhou, W Dou, G Abernathy, A Kuchuk, W Du, B Li, ...
AIP Advances 8 (2), 2018
272018
Crystalline GeSn growth by plasma enhanced chemical vapor deposition
W Dou, B Alharthi, PC Grant, JM Grant, A Mosleh, H Tran, W Du, ...
Optical Materials Express 8 (10), 3220-3229, 2018
232018
Structural and optical characteristics of GeSn quantum wells for silicon-based mid-infrared optoelectronic applications
W Dou, SA Ghetmiri, S Al-Kabi, A Mosleh, Y Zhou, B Alharthi, W Du, ...
Journal of Electronic Materials 45, 6265-6272, 2016
222016
Photovoltage spectroscopy of direct and indirect bandgaps of strained Ge1-xSnx thin films on a Ge/Si (001) substrate
SV Kondratenko, YV Hyrka, YI Mazur, AV Kuchuk, W Dou, H Tran, ...
Acta Materialia 171, 40-47, 2019
212019
SiyGe1− x− ySnx films grown on Si using a cold-wall ultrahigh-vacuum chemical vapor deposition system
A Mosleh, M Alher, W Du, LC Cousar, SA Ghetmiri, S Al-Kabi, W Dou, ...
Journal of Vacuum Science & Technology B 34 (1), 2016
192016
Study of direct bandgap type-I GeSn/GeSn double quantum well with improved carrier confinement
PC Grant, J Margetis, W Du, Y Zhou, W Dou, G Abernathy, A Kuchuk, B Li, ...
Nanotechnology 29 (46), 465201, 2018
182018
Buffer-Free GeSn and SiGeSn Growth on Si Substrate Using In Situ SnD4 Gas Mixing
A Mosleh, M Alher, LC Cousar, W Du, SA Ghetmiri, S Al-Kabi, W Dou, ...
Journal of Electronic Materials 45, 2051-2058, 2016
182016
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