| Electrical properties and low-temperature photolumincesence of Si-doped CdTe crystals OA Parfenyuk, MI Ilashchuk, KS Ulyanitskiĭ, PM Fochuk, OM Strilchuk, ... Semiconductors 40, 143-147, 2006 | 9 | 2006 |
| Gamma-stimulated change of the photoluminescence properties of Cd1− xZnxTe thin films I Nasieka, L Rashkovetskyi, O Strilchuk, B Danilchenko Nuclear Instruments and Methods in Physics Research Section A: Accelerators …, 2011 | 8 | 2011 |
| Analysis of luminescence method applicability for determination of Cd₁₋ xZnxTe composition KD Glinchuk, NM Litovchenko, ON Strilchuk Semiconductor Physics Quantum Electronics & Optoelectronics, 2003 | 8 | 2003 |
| Photoluminescence evaluation of the quality of Cd0.9Zn0.1Te detectors doped with different indium concentrations Y Naseka, O Strilchuk, V Komar, I Terzin, S Sulima, K Bryleva physica status solidi (b) 249 (1), 142-145, 2012 | 5 | 2012 |
| Analysis of luminescence method for determination of Cd₁₋ xZnxTe composition KD Glinchuk, NM Litovchenko, AV Prokhorovich, ON Strilchuk Semiconductor Physics Quantum Electronics & Optoelectronics, 2005 | 5 | 2005 |
| Investigation of the thermal annealing effect on the defects structure in γ-irradiated CdZnTe crystals by photoluminescence method I Nasieka, L Rashkovetskyi, O Strilchuk, V Maslov, E Venger Nuclear Instruments and Methods in Physics Research Section B: Beam …, 2012 | 4 | 2012 |
| Analysis of the Low‐Temperature (77 K) Near‐Band‐Edge Luminescence in Undoped Semi‐Insulating GaAs KD Glinchuk, NM Litovchenko, AV Prokhorovich, ON Strilchuk physica status solidi (b) 213 (1), 233-241, 1999 | 4 | 1999 |
| On determination of Cd1–xZnxTe composition from an analysis of the 4.2, 77 and 295 K edge photoluminescence spectra KD Glinchuk, VP Maslov, OM Strilchuk, AB Lyapina Semiconductor physics, quantum electronics & optoelectronics, 305-313, 2017 | 1 | 2017 |
| Influence of irradiation with γ-ray photons on the photoluminescence of Cd0.9Zn0.1Te crystals preliminarily subjected to the intense radiation of a neodymium laser KD Glinchuk, AP Medvid’, AM Mychko, YM Naseka, AV Prokhorovich, ... Semiconductors 47, 457-463, 2013 | 1 | 2013 |
| Coefficients of capture of free excitons by shallow acceptors and donors in gallium arsenide KD Glinchuk, NM Litovchenko, ON Strilchuk Semiconductors 38 (5), 543-545, 2004 | 1 | 2004 |
| Stimulated by heating-up changes of lux-brightness characteristics of semi-in sulating speciallyundoped GaAs crystals NM Litovchenko, AV Prokhorovich, ON Strilchuk Semiconductor Physics Quantum Electronics & Optoelectronics, 2001 | 1 | 2001 |
| Laser-stimulated structural transformations in AlxGa1-xAs/GaAs system L Fedorenko, A Silenas, O Havryliuk, O Strilchuk, V Yukhymchuk, ... Thin Solid Films 685, 34-39, 2019 | | 2019 |
| Excitonic parameters of InxGa1-xAs-GaAs heterostructures with quantum wells at low temperatures NM Litovchenko, DV Korbutyak, OM Strilchuk arXiv preprint arXiv:1303.3884, 2013 | | 2013 |
| Exciton Quantum Confinement Effect in Nanohills Formed on a Surface of CdZnTe Crystal by Nd: YAG Laser Radiation A Medvids, A Mičko, O Strilchuk, N Litovchenko, P Onufrijevs, Y Naseka, ... publication. editionName, 106-106, 2008 | | 2008 |
| Properties of nanostructure on a surface of Cd o. 9Zn o. 1te compound by laser radiation A Medvid, A Mychko, P Onufrijevs, A Pludons, N Litovchenko, O Strilchuk International Conference-Radiation Interaction with Material and its use in …, 2008 | | 2008 |
| Optical Properties of Nanostructures on a Surface of CdZnTe Ternary Compound by Laser Radiation A Medvids, A Mičko, N Litovchenko, O Strilchuk, P Onufrijevs, A Plūdons publication. editionName, 105-105, 2008 | | 2008 |
| Optical Properties of Nanostructures on a Surface of CdZnTe Crystal By Pulsed Powerfull Laser Radiation A Medvids, A Mičko, P Onufrijevs, A Plūdons, N Litovchenko, O Strilchuk publication. editionName, 123-123, 2008 | | 2008 |
| On the origin of 300 K near-band-edge luminescence in CdTe KD Glinchuk, NM Litovchenko, ON Strilchuk Semiconductor Physics Quantum Electronics & Optoelectronics, 2003 | | 2003 |
| Capture coefficients of free excitons by shallow acceptors and donors in gallium arsenide KD Glinchuk, NM Litovchenko, ON Strilchuk Semiconductor Physics Quantum Electronics & Optoelectronics, 2003 | | 2003 |
| A STUDY OF FORMATION OF NEAR-FIELD AND FAR-FIELD PATTERNS OF THE PLATELET MICROLASER RADIATION VV BATIN, AM KAMUZ, PF OLEKSENKO, SV SVECHNIKOV, ... KVANTOVAYA ELEKTRONIKA 18 (5), 581-583, 1991 | | 1991 |
