Semiconducting Mg 2 Si thin films prepared by molecular-beam epitaxy JE Mahan, A Vantomme, G Langouche, JP Becker
Physical Review B 54 (23), 16965, 1996
166 1996 Position-sensitive Si pad detectors for electron emission channeling experiments U Wahl, JG Correia, A Czermak, SG Jahn, P Jalocha, JG Marques, ...
Nuclear Instruments and Methods in Physics Research Section A: Accelerators …, 2004
140 * 2004 Mössbauer spectroscopy Y Yoshida, G Langouche
Springer Berlin Heidelberg, doi 10, 978-3, 2013
100 2013 Direct evidence for tetrahedral interstitial Er in Si U Wahl, A Vantomme, J De Wachter, R Moons, G Langouche, ...
Physical review letters 79 (11), 2069, 1997
91 1997 Thin film growth of semiconducting by codeposition A Vantomme, JE Mahan, G Langouche, JP Becker, M Van Bael, K Temst, ...
Applied physics letters 70 (9), 1086-1088, 1997
88 1997 Co silicide formation on SiGeC/Si and SiGe/Si layers RA Donaton, K Maex, A Vantomme, G Langouche, Y Morciaux, ...
Applied physics letters 70 (10), 1266-1268, 1997
83 1997 Concentration-controlled phase selection of silicide formation during reactive deposition A Vantomme, S Degroote, J Dekoster, G Langouche, R Pretorius
Applied physics letters 74 (21), 3137-3139, 1999
79 1999 Emission channeling studies of Pr in GaN U Wahl, A Vantomme, G Langouche, JP Araújo, L Peralta, JG Correia, ...
Journal of Applied Physics 88 (3), 1319-1324, 2000
73 2000 Growth mechanism and optical properties of semiconducting Mg2Si thin films A Vantomme, G Langouche, JE Mahan, JP Becker
Microelectronic engineering 50 (1-4), 237-242, 2000
70 2000 Low‐temperature anneal of the divacancy in p ‐type silicon: A transformation from V2 to Vx Oy complexes? MA Trauwaert, J Vanhellemont, HE Maes, AM Van Bavel, G Langouche, ...
Applied physics letters 66 (22), 3056-3057, 1995
66 1995 Epilayer-induced structural transition to bcc Co during epitaxial growth of Co/Fe superlattices J Dekoster, E Jedryka, C Meny, G Langouche
Europhysics letters 22 (6), 433, 1993
54 1993 Paramagnetism in Mn/Fe implanted ZnO HP Gunnlaugsson, TE Mølholt, R Mantovan, H Masenda, D Naidoo, ...
Applied Physics Letters 97 (14), 2010
48 2010 Electron emission channeling with position-sensitive detectors U Wahl, JG Correia, S Cardoso, JG Marques, A Vantomme, G Langouche
Nuclear Instruments and Methods in Physics Research Section B: Beam …, 1998
48 1998 Hyperfine interaction of defects in semiconductors G Langouche
48 1992 Elastic strain in layer: A combined x-ray diffraction and Rutherford backscattering/channeling study MF Wu, A Vantomme, SM Hogg, G Langouche, W Van der Stricht, ...
Applied physics letters 74 (3), 365-367, 1999
46 1999 Epitaxial growth of bcc Co/Fe superlattices J Dekoster, E Jedryka, C Meny, G Langouche
Journal of magnetism and magnetic materials 121 (1-3), 69-72, 1993
44 1993 Defects and impurities in silicon materials Y Yoshida, G Langouche
Springer Japan. Tokyo 10, 978-4, 2015
43 2015 New phases and chemical short range order in co-deposited CoFe thin films with bcc structure: an NMR study M Wojcik, JP Jay, P Panissod, E Jedryka, J Dekoster, G Langouche
Zeitschrift für Physik B Condensed Matter 103, 5-12, 1997
42 1997 Direct evidence for implanted Fe on substitutional Ga sites in GaN U Wahl, A Vantomme, G Langouche, JG Correia, L Peralta, ...
Applied Physics Letters 78 (21), 3217-3219, 2001
40 2001 The formation and thermal stability of ion-beam-synthesized ternary MexFe1− xSi2 (Me= Co, Ni) in Si (111) A Vantomme, MF Wu, G Langouche, J Tavares, H Bender
Nuclear Instruments and Methods in Physics Research Section B: Beam …, 1995
38 1995