Підписатись
Sergii Golovynskyi
Sergii Golovynskyi
College of Optoelectronic Engineering, Shenzhen University
Підтверджена електронна адреса в szu.edu.cn - Домашня сторінка
Назва
Посилання
Посилання
Рік
Optical windows for head tissues in near‐infrared and short‐wave infrared regions: approaching transcranial light applications
S Golovynskyi, I Golovynska, LI Stepanova, OI Datsenko, L Liu, J Qu, ...
Journal of biophotonics 11 (12), e201800141, 2018
1692018
A ZnS/CaZnOS heterojunction for efficient mechanical‐to‐optical energy conversion by conduction band offset
D Peng, Y Jiang, B Huang, Y Du, J Zhao, X Zhang, R Ma, S Golovynskyi, ...
Advanced Materials 32 (16), 1907747, 2020
1242020
Exciton and trion in few-layer MoS2: Thickness-and temperature-dependent photoluminescence
S Golovynskyi, I Irfan, M Bosi, L Seravalli, OI Datsenko, I Golovynska, B Li, ...
Applied Surface Science 515, 146033, 2020
952020
Control of secondary phases and disorder degree in Cu2ZnSnS4 films by sulfurization at varied subatmospheric pressures
IS Babichuk, MO Semenenko, S Golovynskyi, R Caballero, OI Datsenko, ...
Solar Energy Materials and Solar Cells 200, 109915, 2019
452019
Enhancement of Raman Scattering and Exciton/Trion Photoluminescence of Monolayer and Few-Layer MoS2 by Ag Nanoprisms and Nanoparticles: Shape and …
I Irfan, S Golovynskyi, M Bosi, L Seravalli, OA Yeshchenko, B Xue, ...
The Journal of Physical Chemistry C 125 (7), 4119-4132, 2021
372021
Red and near-infrared light evokes Ca2+ influx, endoplasmic reticulum release and membrane depolarization in neurons and cancer cells
I Golovynska, S Golovynskyi, YV Stepanov, LI Stepanova, J Qu, ...
Journal of Photochemistry and Photobiology B: Biology 214, 112088, 2021
342021
Secondary phases in Cu2ZnSnS4 films obtained by spray pyrolysis at different substrate temperatures and Cu contents
IS Babichuk, S Golovynskyi, VV Brus, IV Babichuk, O Datsenko, J Li, G Xu, ...
Materials Letters 216, 173-175, 2018
322018
MoS2 two-dimensional quantum dots with weak lateral quantum confinement: Intense exciton and trion photoluminescence
S Golovynskyi, M Bosi, L Seravalli, B Li
Surfaces and Interfaces 23, 100909, 2021
302021
Mechanoluminescent materials for athletic analytics in sports science
D Peng, C Wang, R Ma, S Mao, S Qu, Z Ren, S Golovynskyi, C Pan
Sci. Bull. 66 (3), 206-209, 2021
302021
Red and near‐infrared light induces intracellular Ca2+ flux via the activation of glutamate N‐methyl‐D‐aspartate receptors
I Golovynska, S Golovynskyi, YV Stepanov, LV Garmanchuk, ...
Journal of Cellular Physiology 234 (9), 15989-16002, 2019
282019
Insight into Al doping effect on photodetector performance of CdS and CdS: Mg films prepared by self-controlled nebulizer spray technique
KDA Kumar, P Mele, S Golovynskyi, A Khan, AM El-Toni, AA Ansari, ...
Journal of Alloys and Compounds 892, 160801, 2022
272022
Raman mapping of MoS2 at Cu2ZnSnS4/Mo interface in thin film
IS Babichuk, MO Semenenko, R Caballero, OI Datsenko, S Golovynskyi, ...
Solar Energy 205, 154-160, 2020
272020
Below bandgap photoluminescence of an AlN crystal: Co-existence of two different charging states of a defect center
Q Zhou, Z Zhang, H Li, S Golovynskyi, X Tang, H Wu, J Wang, B Li
Apl Materials 8 (8), 2020
262020
Near-infrared light reduces β-amyloid-stimulated microglial toxicity and enhances survival of neurons: Mechanisms of light therapy for Alzheimer’s disease
YV Stepanov, I Golovynska, R Zhang, S Golovynskyi, LI Stepanova, ...
Alzheimer's research & therapy 14 (1), 84, 2022
252022
Photoconductivity spectra of Ge/Si heterostructures with ge QDs
OV Vakulenko, SV Kondratenko, AS Nikolenko, SL Golovinskiy, ...
Nanotechnology 18 (18), 185401, 2007
24*2007
Trion Binding Energy Variation on Photoluminescence Excitation Energy and Power during Direct to Indirect Bandgap Crossover in Monolayer and Few-Layer MoS2
S Golovynskyi, OI Datsenko, D Dong, Y Lin, I Irfan, B Li, D Lin, J Qu
The Journal of Physical Chemistry C 125 (32), 17806-17819, 2021
232021
Effect of carrier capture by deep levels on lateral photoconductivity of InGaAs/GaAs quantum dot structures
OV Vakulenko, SL Golovynskyi, SV Kondratenko
Journal of Applied Physics 110 (4), 2011
232011
Photoelectric properties of the metamorphic InAs/InGaAs quantum dot structure at room temperature
SL Golovynskyi, L Seravalli, G Trevisi, P Frigeri, E Gombia, OI Dacenko, ...
Journal of Applied Physics 117 (21), 2015
212015
High transparent and conductive undoped ZnO thin films deposited by reactive ion-beam sputtering
S Golovynskyi, A Ievtushenko, S Mamykin, M Dusheiko, I Golovynska, ...
Vacuum 153, 204-210, 2018
202018
Deep levels in metamorphic InAs/InGaAs quantum dot structures with different composition of the embedding layers
S Golovynskyi, O Datsenko, L Seravalli, O Kozak, G Trevisi, P Frigeri, ...
Semiconductor Science and Technology 32 (12), 125001, 2017
202017
У даний момент система не може виконати операцію. Спробуйте пізніше.
Статті 1–20