Sergii Golovynskyi
Sergii Golovynskyi
College of Optoelectronic Engineering, Shenzhen University
Підтверджена електронна адреса в szu.edu.cn - Домашня сторінка
Назва
Посилання
Посилання
Рік
Optical windows for head tissues in near‐infrared and short‐wave infrared regions: Approaching transcranial light applications
S Golovynskyi, I Golovynska, LI Stepanova, OI Datsenko, L Liu, J Qu, ...
Journal of biophotonics 11 (12), e201800141, 2018
562018
A ZnS/CaZnOS Heterojunction for Efficient Mechanical‐to‐Optical Energy Conversion by Conduction Band Offset
D Peng, Y Jiang, B Huang, Y Du, J Zhao, X Zhang, R Ma, S Golovynskyi, ...
Advanced Materials 32 (16), 1907747, 2020
222020
Effect of carrier capture by deep levels on lateral photoconductivity of InGaAs/GaAs quantum dot structures
OV Vakulenko, SL Golovynskyi, SV Kondratenko
Journal of Applied Physics 110 (4), 043717, 2011
202011
Photoconductivity spectra of Ge/Si heterostructures with ge QDs
OV Vakulenko, SV Kondratenko, AS Nikolenko, SL Golovinskiy, ...
Nanotechnology 18 (18), 185401, 2007
20*2007
Control of secondary phases and disorder degree in Cu2ZnSnS4 films by sulfurization at varied subatmospheric pressures
IS Babichuk, MO Semenenko, S Golovynskyi, R Caballero, OI Datsenko, ...
Solar Energy Materials and Solar Cells 200, 109915, 2019
192019
Photoelectric properties of the metamorphic InAs/InGaAs quantum dot structure at room temperature
SL Golovynskyi, L Seravalli, G Trevisi, P Frigeri, E Gombia, OI Dacenko, ...
Journal of Applied Physics 117 (21), 214312, 2015
192015
Secondary phases in Cu2ZnSnS4 films obtained by spray pyrolysis at different substrate temperatures and Cu contents
IS Babichuk, S Golovynskyi, VV Brus, IV Babichuk, O Datsenko, J Li, G Xu, ...
Materials Letters 216, 173-175, 2018
142018
Deep levels in metamorphic InAs/InGaAs quantum dot structures with different composition of the embedding layers
S Golovynskyi, O Datsenko, L Seravalli, O Kozak, G Trevisi, P Frigeri, ...
Semiconductor Science and Technology 32 (12), 125001, 2017
142017
Comparative study of photoelectric properties of metamorphic InAs/InGaAs and InAs/GaAs quantum dot structures
S Golovynskyi, L Seravalli, O Datsenko, G Trevisi, P Frigeri, E Gombia, ...
Nanoscale research letters 12 (1), 1-10, 2017
132017
Intensity-dependent nonlinearity of the lateral photoconductivity in InGaAs/GaAs dot-chain structures
SL Golovynskyi, OI Dacenko, SV Kondratenko, SR Lavoryk, YI Mazur, ...
Journal of Applied Physics 119 (18), 184303, 2016
132016
Excitation intensity dependence of lateral photocurrent in InGaAs/GaAs dot-chain structures
SL Golovynskyi, YI Mazur, ZM Wang, ME Ware, OV Vakulenko, ...
Physics Letters A 378 (35), 2622-2626, 2014
112014
Photocurrent spectroscopy of indirect transitions in Ge/Si multilayer quantum dots at room temperature
SV Kondratenko, SL Golovinskiy, OV Vakulenko, YN Kozyrev, ...
Surface science 601 (10), L45-L48, 2007
112007
Red and near‐infrared light induces intracellular Ca2+ flux via the activation of glutamate N‐methyl‐D‐aspartate receptors
I Golovynska, S Golovynskyi, YV Stepanov, LV Garmanchuk, ...
Journal of cellular physiology 234 (9), 15989-16002, 2019
102019
Interband photoconductivity of metamorphic InAs/InGaAs quantum dots in the 1.3–1.55-μm window
S Golovynskyi, OI Datsenko, L Seravalli, G Trevisi, P Frigeri, IS Babichuk, ...
Nanoscale research letters 13 (1), 1-9, 2018
102018
High transparent and conductive undoped ZnO thin films deposited by reactive ion-beam sputtering
S Golovynskyi, A Ievtushenko, S Mamykin, M Dusheiko, I Golovynska, ...
Vacuum 153, 204-210, 2018
102018
Effect of interface defect states on photoelectric properties of InxGa1-xAs/GaAs heterostructures with quantum dots
OV Vakulenko, SL Golovynskyi, SV Kondratenko, YI Mazur, ZM Wang, ...
Ukr. J. Phys 56, 940, 2011
102011
Exciton and trion in few-layer MoS2: Thickness-and temperature-dependent photoluminescence
S Golovynskyi, I Irfan, M Bosi, L Seravalli, OI Datsenko, I Golovynska, B Li, ...
Applied Surface Science 515, 146033, 2020
82020
Defect influence on in-plane photocurrent of InAs/InGaAs quantum dot array: long-term electron trapping and Coulomb screening
S Golovynskyi, OI Datsenko, L Seravalli, G Trevisi, P Frigeri, IS Babichuk, ...
Nanotechnology 30 (30), 305701, 2019
82019
Bipolar effects in photovoltage of metamorphic InAs/InGaAs/GaAs quantum dot heterostructures: characterization and design solutions for light-sensitive devices
S Golovynskyi, L Seravalli, O Datsenko, O Kozak, SV Kondratenko, ...
Nanoscale research letters 12 (1), 1-9, 2017
82017
The lateral photoconductivity of Si/Ge structures with quantum dots
SV Kondratenko, SL Golovinskiy, AS Nikolenko, OV Vakulenko
Semiconductor science and technology 21 (7), 857, 2006
72006
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