|An optically pumped 2.5 μm GeSn laser on Si operating at 110 K|
S Al-Kabi, SA Ghetmiri, J Margetis, T Pham, Y Zhou, W Dou, B Collier, ...
Applied Physics Letters 109 (17), 171105, 2016
|Direct-bandgap GeSn grown on silicon with 2230 nm photoluminescence|
SA Ghetmiri, W Du, J Margetis, A Mosleh, L Cousar, BR Conley, ...
Applied Physics Letters 105 (15), 151109, 2014
|Si-based GeSn lasers with wavelength coverage of 2–3 μm and operating temperatures up to 180 K|
J Margetis, S Al-Kabi, W Du, W Dou, Y Zhou, T Pham, P Grant, S Ghetmiri, ...
ACs Photonics 5 (3), 827-833, 2017
|Room-temperature electroluminescence from Ge/Ge1-xSnx/Ge diodes on Si substrates|
W Du, Y Zhou, SA Ghetmiri, A Mosleh, BR Conley, A Nazzal, RA Soref, ...
Applied Physics Letters 104 (24), 241110, 2014
|Temperature dependent spectral response and detectivity of GeSn photoconductors on silicon for short wave infrared detection|
BR Conley, A Mosleh, SA Ghetmiri, W Du, RA Soref, G Sun, J Margetis, ...
Optics express 22 (13), 15639-15652, 2014
|Competition of optical transitions between direct and indirect bandgaps in Ge1−xSnx|
W Du, SA Ghetmiri, BR Conley, A Mosleh, A Nazzal, RA Soref, G Sun, ...
Applied Physics Letters 105 (5), 051104, 2014
|Growth and characterization of epitaxial Ge1-XSnx alloys and heterostructures using a commercial CVD system|
J Margetis, SA Ghetmiri, W Du, BR Conley, A Mosleh, R Soref, G Sun, ...
ECS Transactions 64 (6), 711, 2014
|Material Characterization of Ge1−xSnx Alloys Grown by a Commercial CVD System for Optoelectronic Device Applications|
A Mosleh, SA Ghetmiri, BR Conley, M Hawkridge, M Benamara, A Nazzal, ...
Journal of electronic materials 43 (4), 938-946, 2014
|Si based GeSn photoconductors with a 1.63 A/W peak responsivity and a 2.4 μm long-wavelength cutoff|
BR Conley, J Margetis, W Du, H Tran, A Mosleh, SA Ghetmiri, J Tolle, ...
Applied Physics Letters 105 (22), 221117, 2014
|Systematic study of GeSn heterostructure-based light-emitting diodes towards mid-infrared applications|
Y Zhou, W Dou, W Du, T Pham, SA Ghetmiri, S Al-Kabi, A Mosleh, M Alher, ...
Journal of Applied Physics 120 (2), 023102, 2016
|Systematic study of Ge1−xSnx absorption coefficient and refractive index for the device applications of Si-based optoelectronics|
H Tran, W Du, SA Ghetmiri, A Mosleh, G Sun, RA Soref, J Margetis, J Tolle, ...
Journal of Applied Physics 119 (10), 103106, 2016
|Study of low-defect and strain-relaxed GeSn growth via reduced pressure CVD in H2 and N2 carrier gas|
J Margetis, A Mosleh, S Al-Kabi, SA Ghetmiri, W Du, W Dou, M Benamara, ...
Journal of Crystal Growth 463, 128-133, 2017
|Shortwave-infrared photoluminescence from Ge1-xSnx thin films on silicon|
Seyed Amir Ghetmiri, Wei Du, Benjamin R. Conley, Aboozar Mosleh, Amjad ...
Journal of Vacuum Science & Technology B 32 (6), 060601, 2014
|Study of a SiGeSn/GeSn/SiGeSn structure toward direct bandgap type-I quantum well for all group-IV optoelectronics|
SA Ghetmiri, Y Zhou, J Margetis, S Al-Kabi, W Dou, A Mosleh, W Du, ...
Optics letters 42 (3), 387-390, 2017
|Optically pumped lasing at 3 μm from compositionally graded GeSn with tin up to 22.3%|
W Dou, Y Zhou, J Margetis, SA Ghetmiri, S Al-Kabi, W Du, J Liu, G Sun, ...
Optics letters 43 (19), 4558-4561, 2018
|Optical Characterization of Si-Based Ge1−x Sn x Alloys with Sn Compositions up to 12%|
Sattar Al-Kabi, Seyed Amir Ghetmiri, Joe Margetis, Wei Du, Aboozar Mosleh ...
Journal of Electronic Materials 45 (4), 2133-2144, 2015
|Fundamentals of Ge1− xSnx and SiyGe1− x-ySnx RPCVD epitaxy|
J Margetis, A Mosleh, SA Ghetmiri, S Al-Kabi, W Dou, W Du, N Bhargava, ...
Materials Science in Semiconductor Processing 70, 38-43, 2017
|Direct growth of Ge1− xSnx films on Si using a cold-wall ultra-high vacuum chemical-vapor-deposition system|
A Mosleh, MA Alher, LC Cousar, W Du, SA Ghetmiri, T Pham, JM Grant, ...
Frontiers in Materials 2, 30, 2015
|Investigation on the formation and propagation of defects in GeSn thin films|
A Mosleh, M Benamara, SA Ghetmiri, BR Conley, MA Alher, W Du, G Sun, ...
ECS Transactions 64 (6), 895, 2014
|Optically pumped GeSn lasers operating at 270 K with broad waveguide structures on Si|
Y Zhou, W Dou, W Du, S Ojo, H Tran, SA Ghetmiri, J Liu, G Sun, R Soref, ...
ACS Photonics 6 (6), 1434-1441, 2019