Francesco Iannuzzo
Francesco Iannuzzo
Full professor, University of Aalborg, Denmark
Подтвержден адрес электронной почты в домене et.aau.dk
Название
Процитировано
Процитировано
Год
Catastrophic failure and fault-tolerant design of IGBT power electronic converters-an overview
R Wu, F Blaabjerg, H Wang, M Liserre, F Iannuzzo
IECON 2013-39th Annual Conference of the IEEE Industrial Electronics Society …, 2013
1902013
High-voltage, high-performance switch using series-connected IGBTs
C Abbate, G Busatto, F Iannuzzo
IEEE Transactions on Power Electronics 25 (9), 2450-2459, 2010
1192010
A 3-D-lumped thermal network model for long-term load profiles analysis in high-power IGBT modules
AS Bahman, K Ma, P Ghimire, F Iannuzzo, F Blaabjerg
IEEE Journal of Emerging and Selected Topics in Power Electronics 4 (3 …, 2016
1132016
Reliability oriented design tool for the new generation of grid connected PV-inverters
NC Sintamarean, F Blaabjerg, H Wang, F Iannuzzo, P de Place Rimmen
IEEE Transactions on Power Electronics 30 (5), 2635-2644, 2014
1032014
A temperature-dependent thermal model of IGBT modules suitable for circuit-level simulations
R Wu, H Wang, KB Pedersen, K Ma, P Ghimire, F Iannuzzo, F Blaabjerg
IEEE Transactions on Industry Applications 52 (4), 3306-3314, 2016
912016
IGBT junction temperature measurement via peak gate current
N Baker, S Munk-Nielsen, F Iannuzzo, M Liserre
IEEE Transactions on Power Electronics 31 (5), 3784-3793, 2016
892016
IGBT junction temperature measurement via peak gate current
N Baker, S Munk-Nielsen, F Iannuzzo, M Liserre
IEEE Transactions on Power Electronics 31 (5), 3784-3793, 2016
892016
A short-circuit safe operation area identification criterion for SiC MOSFET power modules
PD Reigosa, F Iannuzzo, H Luo, F Blaabjerg
IEEE Transactions on Industry Applications 53 (3), 2880-2887, 2016
622016
IR camera validation of IGBT junction temperature measurement via peak gate current
N Baker, L Dupont, S Munk-Nielsen, F Iannuzzo, M Liserre
IEEE Transactions on Power Electronics 32 (4), 3099-3111, 2017
562017
Physical CAD model for high-voltage IGBTs based on lumped-charge approach
F Iannuzzo, G Busatto
IEEE Transactions on Power Electronics 19 (4), 885-893, 2004
552004
A survey of SiC power MOSFETs short-circuit robustness and failure mode analysis
L Ceccarelli, PD Reigosa, F Iannuzzo, F Blaabjerg
Microelectronics Reliability 76, 272-276, 2017
502017
Junction temperature estimation method for a 600 V, 30A IGBT module during converter operation
UM Choi, F Blaabjerg, F Iannuzzo, S Jørgensen
Microelectronics Reliability 55 (9-10), 2022-2026, 2015
452015
Series connection of high power IGBT modules for traction applications
C Abbate, G Busatto, L Fratelli, F Iannuzzo, B Cascone, G Giannini
2005 European Conference on Power Electronics and Applications, 8 pp.-P. 8, 2005
432005
Online junction temperature measurement via internal gate resistance during turn-on
N Baker, S Munk-Nielsen, M Liserre, F Iannuzzo
2014 16th European Conference on Power Electronics and Applications, 1-10, 2014
422014
Design of low-inductance switching power cell for GaN HEMT based inverter
E Gurpinar, F Iannuzzo, Y Yang, A Castellazzi, F Blaabjerg
IEEE Transactions on Industry Applications 54 (2), 1592-1601, 2017
412017
Power cycling test and failure analysis of molded Intelligent Power IGBT Module under different temperature swing durations
UM Choi, F Blaabjerg, S Jørgensen, F Iannuzzo, H Wang, C Uhrenfeldt, ...
Microelectronics Reliability 64, 403-408, 2016
412016
Instabilities in silicon power devices: A review of failure mechanisms in modern power devices
F Iannuzzo, C Abbate, G Busatto
IEEE Industrial Electronics Magazine 8 (3), 28-39, 2014
402014
Aging precursors and degradation effects of SiC-MOSFET modules under highly accelerated power cycling conditions
H Luo, F Iannuzzo, F Blaabjerg, M Turnaturi, E Mattiuzzo
2017 IEEE Energy Conversion Congress and Exposition (ECCE), 2506-2511, 2017
362017
Enabling junction temperature estimation via collector-side thermo-sensitive electrical parameters through emitter stray inductance in high-power IGBT modules
H Luo, W Li, F Iannuzzo, X He, F Blaabjerg
IEEE Transactions on Industrial Electronics 65 (6), 4724-4738, 2017
362017
Role of threshold voltage shift in highly accelerated power cycling tests for SiC MOSFET modules
H Luo, F Iannuzzo, M Turnaturi
IEEE Journal of Emerging and Selected Topics in Power Electronics 8 (2 …, 2019
342019
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