| SnO2 films: formation, electrical and optical properties PM Gorley, VV Khomyak, SV Bilichuk, IG Orletsky, PP Horley, VO Grechko Materials Science and Engineering: B 118 (1-3), 160-163, 2005 | 81 | 2005 |
| Band-gap engineering of ZnO1− xSx films grown by rf magnetron sputtering of ZnS target V Khomyak, I Shtepliuk, V Khranovskyy, R Yakimova Vacuum 121, 120-124, 2015 | 44 | 2015 |
| Microstructure and luminescence dynamics of ZnCdO films with high Cd content deposited on different substrates by DC magnetron sputtering method I Shtepliuk, V Khranovskyy, G Lashkarev, V Khomyak, A Ievtushenko, ... Applied surface science 276, 550-557, 2013 | 40 | 2013 |
| Electron properties of n-and p-CuInSe2 PM Gorley, VV Khomyak, YV Vorobiev, J González-Hernández, PP Horley, ... Solar Energy 82 (2), 100-105, 2008 | 33 | 2008 |
| ZnO-based semimagnetic semiconductors: growth and magnetism aspects AI Savchuk, PN Gorley, VV Khomyak, KS Ulyanytsky, SV Bilichuk, ... Materials Science and Engineering: B 109 (1-3), 196-199, 2004 | 33 | 2004 |
| Electrical properties of n-Zn0. 94Cd0. 06O/p-SiC heterostructures I Shtepliuk, V Khranovskyy, G Lashkarev, V Khomyak, V Lazorenko, ... Solid-State Electronics 81, 72-77, 2013 | 32 | 2013 |
| Effect of gamma radiation on the properties of InSe photodiodes ZD Kovalyuk, VN Katerynchuk, OA Politanska, ON Sydor, VV Khomyak Technical physics letters 31, 359-360, 2005 | 31 | 2005 |
| Annealing effect on the near-band edge emission of ZnO VV Khomyak, MM Slyotov, II Shtepliuk, GV Lashkarev, OM Slyotov, ... Journal of Physics and Chemistry of Solids 74 (2), 291-297, 2013 | 30 | 2013 |
| Electrical properties of anisotype heterojunctions n-CdZnO/p-CdTe VV Brus, MI Ilashchuk, VV Khomyak, ZD Kovalyuk, PD Maryanchuk, ... Semiconductors 46, 1152-1157, 2012 | 27 | 2012 |
| Effect of Se isoelectronic impurity on the luminescence features of the ZnO V Khomyak, M Slyotov, I Shtepliuk, O Slyotov, V Kosolovskiy Acta Physica Polonica A 122 (6), 1039-1041, 2012 | 26 | 2012 |
| Properties of solid solutions, doped film, and nanocomposite structures based on zinc oxide GV Lashkarev, II Shtepliuk, AI Ievtushenko, OY Khyzhun, VV Kartuzov, ... Low temperature physics 41 (2), 129-140, 2015 | 21 | 2015 |
| XPS and Raman Characterizations of Films Grown at the Different Growth Conditions I Shtepliuk, O Khyzhun, G Lashkarev, V Khomyak, V Lazorenko Acta Physica Polonica A 122 (6), 1034-1038, 2012 | 20 | 2012 |
| Enhancement of the ultraviolet luminescence intensity from Cd-doped ZnO films caused by exciton binding I Shtepliuk, G Lashkarev, O Khyzhun, B Kowalski, A Reszka, V Khomyak, ... Acta Physica Polonica A 120 (5), 914-917, 2011 | 19 | 2011 |
| Optical and photoluminescence properties of ZnO1-xSex thin films VV Khomyak, OM Slyotov, SM Chupyra Applied optics 53 (10), B110-B115, 2014 | 18 | 2014 |
| Features of the influence of the deposition power and Ar/O2 gas ratio on the microstructure and optical properties of the Zn0. 9Cd0. 1O films I Shtepliuk, G Lashkarev, V Khomyak, O Lytvyn, P Marianchuk, ... Thin Solid Films 520 (14), 4772-4777, 2012 | 18 | 2012 |
| Fabrication and electrical characterization of the anisotype n-ZnO/p-CdTe heterostructures for solar cell applications VV Khomyak, MI Ilashchuk, OA Parfenyuk, II Shtepliuk Journal of Applied Physics 114 (22), 2013 | 13 | 2013 |
| Fabrication and characterization of photosensitive n-ZnO/p-InSe heterojunctions Z Kudrynskyi, V Khomyak, V Katerynchuk, M Kovalyuk, V Netyaga, ... Thin Solid Films 582, 253-257, 2015 | 11 | 2015 |
| Mechanisms of Current Carrier Scattering in ZnxHg1–xSe NP Gavaleshko, PN Gorley, VV Khomyak, VA Shenderovskii physica status solidi (b) 98 (2), 463-471, 1980 | 10 | 1980 |
| Fabrication and characterization of photosensitive n-CdO/p-InSe heterojunctions Z Kudrynskyi, Z Kovalyuk, V Katerynchuk, V Khomyak, I Orletsky, ... Acta Physica Polonica A 124 (4), 720-723, 2013 | 9 | 2013 |
| Synthesis and characterization of semimagnetic semiconductor nanocrystals for spin electronics AI Savchuk, PN Gorley, VV Khomyak, AG Voloshchuk, VI Fediv, ... Materials Science and Engineering: C 23 (6-8), 753-756, 2003 | 8 | 2003 |
