Methods of high-energy chemistry in the technology of wide-gap chalcogenide semiconductors AN Georgobiani, MB Kotlyarevsky, IV Rogozin Inorganic Materials 40, S1-S18, 2004 | 28 | 2004 |
Nitrogen-doped p-type ZnO thin films and ZnO/ZnSe pn heterojunctions grown on ZnSe substrate by radical beam gettering epitaxy IV Rogozin Thin Solid Films 517 (15), 4318-4321, 2009 | 26 | 2009 |
Luminescence of native-defect p-type ZnO AN Georgobiani, MB Kotlyarevskii, VV Kidalov, LS Lepnev, IV Rogozin Inorganic materials 37, 1095-1098, 2001 | 23 | 2001 |
Phase content and photoluminescence of ZnO layers obtained on ZnSe substrates by radical-beam gettering epitaxy AN Georgobiani, MB Kotlyarevsky, IV Rogozin Nuclear Physics B-Proceedings Supplements 78 (1-3), 484-487, 1999 | 20 | 1999 |
Characteristics of nitrogen-doped p-ZnO thin films and ZnO/ZnSe p–n heterojunctions grown on a ZnSe substrate IV Rogozin, MB Kotlyarevsky Semiconductor science and technology 23 (8), 085008, 2008 | 16 | 2008 |
p-Type II–VI compounds doped by rare-earth elements AN Georgobiani, MB Kotljarevsky, VV Kidalov, IV Rogozin, UA Aminov Journal of crystal growth 214, 516-519, 2000 | 15 | 2000 |
ZnO/ZnSe structures prepared by radical-beam getter epitaxy AN Georgobiani, MB Kotlyarevskii, VV Kidalov, LV Rogozin Inorganic Materials 33 (2), 185-188, 1997 | 15 | 1997 |
V N-Mg defect complexes as compensating centers in GaN:Mg IV Rogozin, AN Georgobiani, MB Kotlyarevsky Inorganic Materials 44, 1208-1213, 2008 | 10 | 2008 |
Structural and optical properties of ZnO films obtained on mesoporous Sisubstrates by the method of HF magnetron sputtering V Kidalov, A DYADENCHUK, Y BACHERIKOV, A ZHUK, T GORBANIUK, ... Turkish Journal of Physics 44 (1), 57-66, 2020 | 8 | 2020 |
Люминесценция ZnO со сверхстехиометрическим содержанием кислорода МБ Котляревский, АН Георгобиани, ИВ Рогозин, АВ Мараховский Журнал прикладной спектроскопии 70 (1), 86-89, 2003 | 8 | 2003 |
Люминесценция ZnO с собственно-дефектной проводимостью р-типа АН Георгобиани, МБ Котляревский, ВВ Кидалов, ЛС Лепнев, ... Неорган. материалы 37 (11), 1287-1291, 2001 | 8 | 2001 |
Kinetics of GaN radical-beam gettering epitaxy on GaAs substrates IV Rogozin, AN Georgobiani Inorganic materials 42, 1342-1347, 2006 | 7 | 2006 |
Fabrication of p-n junctions in ZnO by arsenic ion implantation followed by annealing in atomic oxygen IV Rogozin, AN Georgobiani, MB Kotlyarevsky Inorganic Materials 43, 714-719, 2007 | 6 | 2007 |
The influence of the preliminary ion implantation in the ZnSe on the properties of the ZnO ZnSe structures, obtained by the radical beam gettering epitaxy method AN Georgobiani, MB Kotljarevsky, UA Aminov, VV Kidalov, IV Rogozin Nuclear Instruments and Methods in Physics Research Section A: Accelerators …, 1997 | 6 | 1997 |
Characterization of the surface of ZnO layers and the ZnO/ZnSe interface in heterostructures prepared by radical-beam getter epitaxy AN Georgobiani, MB Kotlyarevskii, IV Rogozin Inorganic materials 31 (10), 1995 | 6 | 1995 |
Compensation mechanism for hole conduction in ZnO: N films IV Rogozin, AN Georgobiani, MB Kotlyarevsky, AV Marakhovskii Inorganic Materials 45, 391-398, 2009 | 5 | 2009 |
Механизм компенсации дырочной проводимости пленок ZnO: N ИВ Рогозин, АН Георгобиани, МБ Котляревский, АВ Мараховский Неорганические материалы 45 (4), 440-448, 2009 | 5 | 2009 |
Preparation of ZnO: N filmas by radical-beam gettering epitaxy method IV Rogozin Semiconductor Physics and Technology 41, 924-928, 2007 | 5 | 2007 |
Електротехніка. Лабораторні роботи: Навчально-методичний посібник для виконання лабораторних робіт з електротехніки для студентів вищих навчальних педагогічних закладів ІТ Богданов, ІВ Рогозін Запоріжжя: Просвіта, 2005 | 5 | 2005 |
Kinetics of high-temperature defect formation in ZnO in the stream of oxygen radicals MB Kotlyarevsky, IV Rogozin, AV Marakhovsky Zinc Oxide—A Material for Micro-and Optoelectronic Applications, 25-34, 2005 | 5 | 2005 |