Игорь Рогозин
Игорь Рогозин
Бердянский государственный педагогический университет
Підтверджена електронна адреса в bdpu.org.ua
НазваПосиланняРік
Methods of high-energy chemistry in the technology of wide-gap chalcogenide semiconductors
AN Georgobiani, MB Kotlyarevsky, IV Rogozin
Inorganic materials 40 (1), S1-S18, 2004
242004
Luminescence of native-defect p-type ZnO
AN Georgobiani, MB Kotlyarevskii, VV Kidalov, LS Lepnev, IV Rogozin
Inorganic materials 37 (11), 1095-1098, 2001
232001
Phase content and photoluminescence of ZnO layers obtained on ZnSe substrates by radical-beam gettering epitaxy
AN Georgobiani, MB Kotlyarevsky, IV Rogozin
Nuclear Physics B-Proceedings Supplements 78 (1-3), 484-487, 1999
181999
ZnO/ZnSe structures prepared by radical-beam getter epitaxy
AN Georgobiani, MB Kotlyarevskii, VV Kidalov, LV Rogozin
Inorganic Materials 33 (2), 185-188, 1997
181997
Nitrogen-doped p-type ZnO thin films and ZnO/ZnSe pn heterojunctions grown on ZnSe substrate by radical beam gettering epitaxy
IV Rogozin
Thin solid films 517 (15), 4318-4321, 2009
152009
p-Type II–VI compounds doped by rare-earth elements
AN Georgobiani, MB Kotljarevsky, VV Kidalov, IV Rogozin, UA Aminov
Journal of crystal growth 214, 516-519, 2000
132000
Characteristics of nitrogen-doped p-ZnO thin films and ZnO/ZnSe p–n heterojunctions grown on a ZnSe substrate
IV Rogozin, MB Kotlyarevsky
Semiconductor science and technology 23 (8), 085008, 2008
112008
Люминесценция ZnO со сверх-стехиометрическим содержанием кислорода
МБ Котляревский, АН Георгобиани, ИВ Рогозин, АВ Мараховский
Журнал прикладной спектроскопии 70 (1), 86-89, 2003
82003
V N-Mg defect complexes as compensating centers in GaN:Mg
IV Rogozin, AN Georgobiani, MB Kotlyarevsky
Inorganic Materials 44 (11), 1208-1213, 2008
72008
Kinetics of GaN radical-beam gettering epitaxy on GaAs substrates
IV Rogozin, AN Georgobiani
Inorganic materials 42 (12), 1342-1347, 2006
72006
Inorganic Materials. 40
AN Georgobiani, MB Kotliarevsky, IV Rogozin
Suppl 1, S1, 2004
62004
Люминесценция ZnO с собственно-дефектной проводимостью р-типа
АН Георгобиани, МВ Котляревський, ВВ Кидалов, ЛС Лепнев, ...
Неорганические матеріали 37 (11), 1287-1291, 2001
62001
Characterization of the surface of ZnO layers and the ZnO/ZnSe interface in heterostructures prepared by radical-beam getter epitaxy
AN Georgobiani, MB Kotlyarevskii, IV Rogozin
Inorganic materials 31 (10), 1995
61995
Fabrication of p-n junctions in ZnO by arsenic ion implantation followed by annealing in atomic oxygen
IV Rogozin, AN Georgobiani, MB Kotlyarevsky
Inorganic Materials 43 (7), 714-719, 2007
52007
Preparation of ZnO: N filmas by radical-beam gettering epitaxy method
IV Rogozin
Semiconductor Physics and Technology 41, 924-928, 2007
52007
Luminescence of ZnO Having a Superstoichiometric Content of Oxygen
MB Kotlyarevskii, AN Georgobiani, IV Rogozin, AV Marakhovskii
Journal of Applied Spectroscopy 70 (1), 95-98, 2003
52003
The influence of the preliminary ion implantation in the ZnSe on the properties of the ZnO ZnSe structures, obtained by the radical beam gettering epitaxy method
AN Georgobiani, MB Kotljarevsky, UA Aminov, VV Kidalov, IV Rogozin
Nuclear Instruments and Methods in Physics Research Section A: Accelerators …, 1997
51997
Structural and electroluminescent properties of n-ZnO/p-GaN:Mg heterojunctions
IV Rogozin, AN Georgobiani, MB Kotlyarevsky, NP Datskevich
Inorganic Materials 46 (11), 1161-1165, 2010
42010
Приготовление пленок ZnO: N методом радикало-лучевой геттерирующей эпитаксии
ИВ Рогозин
Физика и техника полупроводников 41 (8), 924-928, 2007
42007
Kinetics of high-temperature defect formation in ZnO in the stream of oxygen radicals
MB Kotlyarevsky, IV Rogozin, AV Marakhovsky
Zinc Oxide—A Material for Micro-and Optoelectronic Applications, 25-34, 2005
42005
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