| Carbon dots based photoelectrochemical sensors for ultrasensitive detection of glutathione and its applications in probing of myocardial infarction Z Li, J Zhang, Y Li, S Zhao, P Zhang, Y Zhang, J Bi, G Liu, Z Yue Biosensors and Bioelectronics 99, 251-258, 2018 | 103 | 2018 |
| The Impact of X-Ray and Proton Irradiation on -Based Bipolar Resistive Memories JS Bi, ZS Han, EX Zhang, MW McCurdy, RA Reed, RD Schrimpf, ... IEEE Transactions on Nuclear Science 60 (6), 4540-4546, 2013 | 66 | 2013 |
| Single- and Multiple-Event Induced Upsets in 1T1R RRAM WG Bennett, NC Hooten, RD Schrimpf, RA Reed, MH Mendenhall, ... IEEE Transactions on Nuclear Science 61 (4), 1717-1725, 2014 | 54 | 2014 |
| Numerical simulation of single-event-transient effects on ultra-thin-body fully-depleted silicon-on-insulator transistor based on 22 nm process node JS Bi, G Liu, JJ Luo, ZS Han | 33 | 2013 |
| An area efficient SEU-tolerant latch design HB Wang, JS Bi, ML Li, L Chen, R Liu, YQ Li, AL He, G Guo IEEE Transactions on Nuclear Science 61 (6), 3660-3666, 2014 | 30 | 2014 |
| Robust Breakdown Reliability and Improved Endurance in Hf0.5Zr0.5O2 Ferroelectric Using Grain Boundary Interruption Y Xu, Y Yang, S Zhao, T Gong, P Jiang, S Lv, H Yu, P Yuan, Z Dang, ... IEEE Transactions on Electron Devices 69 (1), 430-433, 2021 | 29 | 2021 |
| Predictive As-grown-Generation (AG) model for BTI-induced device/circuit level variations in nanoscale technology nodes R Gao, Z Ji, SM Hatta, JF Zhang, J Franco, B Kaczer, W Zhang, M Duan, ... 2016 IEEE International Electron Devices Meeting (IEDM), 31.4. 1-31.4. 4, 2016 | 29 | 2016 |
| Total Ionization Dose Effects on Charge-Trapping Memory With Al2O3/HfO2/Al2O3 Trilayer Structure JS Bi, YN Xu, GB Xu, HB Wang, L Chen, M Liu IEEE Transactions on Nuclear Science 65 (1), 200-205, 2017 | 27 | 2017 |
| ISFET and Dex-AgNPs based portable sensor for reusable and real-time determinations of concanavalin A and glucose on smartphone S Zhao, C Shi, H Hu, Z Li, G Xiao, Q Yang, P Sun, L Cheng, W Niu, J Bi, ... Biosensors and Bioelectronics 151, 111962, 2020 | 26 | 2020 |
| Total ionizing dose effects and annealing behaviors of HfO2-based MOS capacitor Y Xu, J Bi, G Xu, K Xi, B Li, M Liu Science China. Information Sciences 60 (12), 120401, 2017 | 21 | 2017 |
| Radiation Effects on LiNbO Memristors for Neuromorphic Computing Applications JD Greenlee, JC Shank, MB Tellekamp, EX Zhang, J Bi, DM Fleetwood, ... IEEE Transactions on Nuclear Science 60 (6), 4555-4562, 2013 | 20 | 2013 |
| Estimation of pulsed laser-induced single event transient in a partially depleted silicon-on-insulator 0.18-μm MOSFET JS Bi, CB Zeng, LC Gao, G Liu, JJ Luo, ZS Han Chinese Physics B 23 (8), 088505, 2014 | 19 | 2014 |
| Study of γ-ray irradiation influence on TiN/HfO2/Si MOS capacitor by CV and DLTS Y Li, Y Ma, W Lin, P Dong, Z Yang, M Gong, J Bi, B Li, K Xi, G Xu Superlattices and Microstructures 120, 313-318, 2018 | 17 | 2018 |
| Neutron-induced single-event-transient effects in ultrathin-body fully-depleted silicon-on-insulator MOSFETs J Bi, RA Reed, RD Schrimpf, DM Fleetwood, Z Han 2013 IEEE International Reliability Physics Symposium (IRPS), SE. 2.1-SE. 2.5, 2013 | 17 | 2013 |
| The effects of γ-ray irradiation on graphene/n-Si Schottky diodes Y Xu, J Bi, K Xi, M Liu Applied Physics Express 12 (6), 061004, 2019 | 16 | 2019 |
| NSREC 2016 Special Issue of the IEEE TRANSACTIONS ON NUCLEAR SCIENCE S Abe, D Adams, P Adell, P Agopian, MA Aguirre, J Ahlbin, A Akkerman, ... IEEE Transactions on Nuclear Science 64 (1), 11, 2017 | 16 | 2017 |
| The effects of proton radiation on aluminum oxide/zirconium-doped hafnium oxide stacked ferroelectric tunneling junctions X Yang, J Bi, Y Xu, K Xi, L Ji Applied Physics Express 14 (6), 061001, 2021 | 15 | 2021 |
| The synergetic effects of high temperature gate bias and total ionization dose on 1.2 kV SiC devices T Zhang, B Allard, J Bi Microelectronics Reliability 88, 631-635, 2018 | 15 | 2018 |
| Effect of cryogenic temperature characteristics on 0.18-μm silicon-on-insulator devices B Xie, B Li, J Bi, J Bu, C Wu, B Li, Z Han, J Luo Chinese Physics B 25 (7), 078501, 2016 | 15 | 2016 |
| Improved multibit storage reliability by design of ferroelectric modulated antiferroelectric memory Y Xu, Y Yang, S Zhao, T Gong, P Jiang, Y Wang, P Yuan, Z Dang, Y Chen, ... IEEE Transactions on Electron Devices 69 (4), 2145-2150, 2022 | 14 | 2022 |
