Bader Alharthi
Bader Alharthi
Підтверджена електронна адреса в
Structural and optical characteristics of GeSn quantum wells for silicon-based mid-infrared optoelectronic applications
W Dou, SA Ghetmiri, S Al-Kabi, A Mosleh, Y Zhou, B Alharthi, W Du, ...
Journal of Electronic Materials 45 (12), 6265-6272, 2016
All group-IV SiGeSn/GeSn/SiGeSn QW laser on Si operating up to 90 K
J Margetis, Y Zhou, W Dou, PC Grant, B Alharthi, W Du, A Wadsworth, ...
Applied Physics Letters 113 (22), 221104, 2018
Comparison study of the low temperature growth of dilute GeSn and Ge
PC Grant, W Dou, B Alharthi, JM Grant, A Mosleh, W Du, B Li, M Mortazavi, ...
Journal of Vacuum Science & Technology B, Nanotechnology and …, 2017
Enhancement of Material Quality of (Si) GeSn Films Grown by SnCl4 Precursor
A Mosleh, MA Alher, L Cousar, H Abusafe, W Dou, P Grant, S Al-Kabi, ...
ECS Transactions 69 (5), 279-286, 2015
Development of SiGeSn Technique Towards Mid-Infrared Devices in Silicon Photonics
W Du, S Al-Kabi, S Ghetmiri, H Tran, T Pham, B Alharthi, A Mosleh, ...
ECS Transactions 75 (8), 231, 2016
Crystalline GeSn growth by plasma enhanced chemical vapor deposition
W Dou, B Alharthi, PC Grant, JM Grant, A Mosleh, H Tran, W Du, ...
Optical Materials Express 8 (10), 3220-3229, 2018
Study of material and optical properties of SixGe1-x-ySny alloys for Si-based optoelectronic device applications
B Alharthi, J Margetis, H Tran, S Al-kabi, W Dou, SA Ghetmiri, A Mosleh, ...
Optical Materials Express 7 (10), 3517-3528, 2017
Heteroepitaxial growth of germanium-on-silicon using ultrahigh-vacuum chemical vapor deposition with RF plasma enhancement
B Alharthi, JM Grant, W Dou, PC Grant, A Mosleh, W Du, M Mortazavi, B Li, ...
Journal of Electronic Materials 47 (8), 4561-4570, 2018
UHV-CVD growth of high quality GeSn using SnCl4: from material growth development to prototype devices
PC Grant, W Dou, B Alharthi, JM Grant, H Tran, G Abernathy, A Mosleh, ...
Optical Materials Express 9 (8), 3277-3291, 2019
Low temperature epitaxy of high-quality Ge buffer using plasma enhancement via UHV-CVD system for photonic device applications
B Alharthi, W Dou, PC Grant, JM Grant, T Morgan, A Mosleh, W Du, B Li, ...
Applied Surface Science 481, 246-254, 2019
UHV-CVD Growth of High Quality GeSn Using SnCl4: From Growth Optimization to Prototype Devices
PC Grant, W Dou, B Alharthi, JM Grant, H Tran, G Abernathy, A Mosleh, ...
arXiv preprint arXiv:1810.02523, 2018
Investigation of SiGeSn/GeSn/SiGeSn Quantum Well Structures and Optically Pumped Lasers on Si
Y Zhou, J Margetis, G Abernathy, W Dou, PC Grant, B Alharthi, W Du, ...
2019 Conference on Lasers and Electro-Optics (CLEO), 1-2, 2019
Growth and Characterization of Silicon-Germanium-Tin Semiconductors for Future Nanophotonics Devices
BS Alharthi
Cvd growth and characterization of sixge1−x−ysny alloys for high efficiency multi-junction solar cells
B Alharthi, A Mosleh, J Margetis, S Al-Kabi, SA Ghetmiri, H Tran, W Du, ...
2016 IEEE 43rd Photovoltaic Specialists Conference (PVSC), 2817-2821, 2016
Effect of Cr-Doping on the Magnetic State of ErSrMnCrO.
KA Ziq, B Al-Harthi
Journal of Superconductivity & Novel Magnetism 24, 2011
Effect of Cr-Doping on the Magnetic State of Er0.55Sr0.45Mn1−x Cr x O3
KA Ziq, B Al-Harthi
Journal of superconductivity and novel magnetism 24 (1-2), 299-302, 2011
B Al-Harthi
King Fahd University of Petroleum and Minerals, 2009
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Статті 1–17