| High-field linear magneto-resistance in topological insulator Bi2Se3 thin films H He, B Li, H Liu, X Guo, Z Wang, M Xie, J Wang Applied Physics Letters 100 (3), 032105, 2012 | 114 | 2012 |
| Interface Engineering of Monolayer MoS2/GaN Hybrid Heterostructure: Modified Band Alignment for Photocatalytic Water Splitting Application by Nitridation … Z Zhang, Q Qian, B Li, KJ Chen ACS applied materials & interfaces 10 (20), 17419-17426, 2018 | 90 | 2018 |
| Characterization of VT‐instability in enhancement‐mode Al2O3‐AlGaN/GaN MIS‐HEMTs Y Lu, S Yang, Q Jiang, Z Tang, B Li, KJ Chen physica status solidi (c) 10 (11), 1397-1400, 2013 | 69 | 2013 |
| Physics of fluorine plasma ion implantation for GaN normally-off HEMT technology KJ Chen, L Yuan, MJ Wang, H Chen, S Huang, Q Zhou, C Zhou, BK Li, ... 2011 International Electron Devices Meeting, 19.4. 1-19.4. 4, 2011 | 62 | 2011 |
| Low on-resistance normally-off GaN double-channel metal–oxide–semiconductor high-electron-mobility transistor J Wei, S Liu, B Li, X Tang, Y Lu, C Liu, M Hua, Z Zhang, G Tang, KJ Chen IEEE Electron Device Letters 36 (12), 1287-1290, 2015 | 57 | 2015 |
| Disorder-induced linear magnetoresistance in (221) topological insulator Bi2Se3 films HT He, HC Liu, BK Li, X Guo, ZJ Xu, MH Xie, JN Wang Applied Physics Letters 103 (3), 031606, 2013 | 52 | 2013 |
| Mechanism of Threshold Voltage Shift in-GaN Gate AlGaN/GaN Transistors X Tang, B Li, HA Moghadam, P Tanner, J Han, S Dimitrijev IEEE Electron Device Letters 39 (8), 1145-1148, 2018 | 41 | 2018 |
| Influence of AlN passivation on dynamic ON-resistance and electric field distribution in high-voltage AlGaN/GaN-on-Si HEMTs Z Tang, S Huang, X Tang, B Li, KJ Chen IEEE Transactions on Electron Devices 61 (8), 2785-2792, 2014 | 41 | 2014 |
| Persistent photoconductivity and carrier transport in heterostructures treated by fluorine plasma BK Li, WK Ge, JN Wang, KJ Chen Applied physics letters 92 (8), 082105, 2008 | 38 | 2008 |
| Surface nitridation for improved dielectric/III‐nitride interfaces in GaN MIS‐HEMTs KJ Chen, S Yang, Z Tang, S Huang, Y Lu, Q Jiang, S Liu, C Liu, B Li physica status solidi (a) 212 (5), 1059-1065, 2015 | 34 | 2015 |
| Improved gate dielectric deposition and enhanced electrical stability for single-layer MoS 2 MOSFET with an AlN interfacial layer Q Qian, B Li, M Hua, Z Zhang, F Lan, Y Xu, R Yan, KJ Chen Scientific reports 6 (1), 1-9, 2016 | 32 | 2016 |
| Enhancement-mode GaN double-channel MOS-HEMT with low on-resistance and robust gate recess J Wei, S Liu, B Li, X Tang, Y Lu, C Liu, M Hua, Z Zhang, G Tang, KJ Chen 2015 IEEE International Electron Devices Meeting (IEDM), 9.4. 1-9.4. 4, 2015 | 32 | 2015 |
| P-doping-free III-nitride high electron mobility light-emitting diodes and transistors B Li, X Tang, J Wang, KJ Chen Applied Physics Letters 105 (3), 032105, 2014 | 23 | 2014 |
| Classification of bound exciton complexes in bulk ZnO by magnetophotoluminescence spectroscopy L Ding, BK Li, HT He, WK Ge, JN Wang, JQ Ning, XM Dai, CC Ling, SJ Xu Journal of Applied Physics 105 (5), 053511, 2009 | 21 | 2009 |
| Tunable Interaction-Induced Localization of Surface Electrons in Antidot Nanostructured Bi2Te3 Thin Films HC Liu, HZ Lu, HT He, B Li, SG Liu, QL He, G Wang, IK Sou, SQ Shen, ... ACS nano 8 (9), 9616-9621, 2014 | 20 | 2014 |
| Fermi-level depinning and hole injection induced two-dimensional electron related radiative emissions from a forward biased Ni/Au-AlGaN/GaN Schottky diode BK Li, MJ Wang, KJ Chen, JN Wang Applied physics letters 95 (23), 232111, 2009 | 20 | 2009 |
| Optical pumping of deep traps in AlGaN/GaN-on-Si HEMTs using an on-chip Schottky-on-heterojunction light-emitting diode B Li, X Tang, KJ Chen Applied Physics Letters 106 (9), 093505, 2015 | 18 | 2015 |
| Control of secondary phases and disorder degree in Cu2ZnSnS4 films by sulfurization at varied subatmospheric pressures IS Babichuk, MO Semenenko, S Golovynskyi, R Caballero, OI Datsenko, ... Solar Energy Materials and Solar Cells 200, 109915, 2019 | 17 | 2019 |
| Simulation study of a power MOSFET with built-in channel diode for enhanced reverse recovery performance M Zhang, J Wei, X Zhou, H Jiang, B Li, KJ Chen IEEE Electron Device Letters 40 (1), 79-82, 2018 | 15 | 2018 |
| Interfacially Bound Exciton State in a Hybrid Structure of Monolayer WS2 and InGaN Quantum Dots G Cheng, B Li, C Zhao, X Yan, H Wang, KM Lau, J Wang Nano letters 18 (9), 5640-5645, 2018 | 15 | 2018 |
Xi TangThe Hong Kong University of Science and TechnologyVerified email at connect.ust.hk
