Baikui Li
Cited by
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High-field linear magneto-resistance in topological insulator Bi2Se3 thin films
H He, B Li, H Liu, X Guo, Z Wang, M Xie, J Wang
Applied Physics Letters 100 (3), 032105, 2012
Interface Engineering of Monolayer MoS2/GaN Hybrid Heterostructure: Modified Band Alignment for Photocatalytic Water Splitting Application by Nitridation …
Z Zhang, Q Qian, B Li, KJ Chen
ACS applied materials & interfaces 10 (20), 17419-17426, 2018
Characterization of VT‐instability in enhancement‐mode Al2O3‐AlGaN/GaN MIS‐HEMTs
Y Lu, S Yang, Q Jiang, Z Tang, B Li, KJ Chen
physica status solidi (c) 10 (11), 1397-1400, 2013
Physics of fluorine plasma ion implantation for GaN normally-off HEMT technology
KJ Chen, L Yuan, MJ Wang, H Chen, S Huang, Q Zhou, C Zhou, BK Li, ...
2011 International Electron Devices Meeting, 19.4. 1-19.4. 4, 2011
Low on-resistance normally-off GaN double-channel metal–oxide–semiconductor high-electron-mobility transistor
J Wei, S Liu, B Li, X Tang, Y Lu, C Liu, M Hua, Z Zhang, G Tang, KJ Chen
IEEE Electron Device Letters 36 (12), 1287-1290, 2015
Disorder-induced linear magnetoresistance in (221) topological insulator Bi2Se3 films
HT He, HC Liu, BK Li, X Guo, ZJ Xu, MH Xie, JN Wang
Applied Physics Letters 103 (3), 031606, 2013
Mechanism of Threshold Voltage Shift in-GaN Gate AlGaN/GaN Transistors
X Tang, B Li, HA Moghadam, P Tanner, J Han, S Dimitrijev
IEEE Electron Device Letters 39 (8), 1145-1148, 2018
Influence of AlN passivation on dynamic ON-resistance and electric field distribution in high-voltage AlGaN/GaN-on-Si HEMTs
Z Tang, S Huang, X Tang, B Li, KJ Chen
IEEE Transactions on Electron Devices 61 (8), 2785-2792, 2014
Persistent photoconductivity and carrier transport in heterostructures treated by fluorine plasma
BK Li, WK Ge, JN Wang, KJ Chen
Applied physics letters 92 (8), 082105, 2008
Surface nitridation for improved dielectric/III‐nitride interfaces in GaN MIS‐HEMTs
KJ Chen, S Yang, Z Tang, S Huang, Y Lu, Q Jiang, S Liu, C Liu, B Li
physica status solidi (a) 212 (5), 1059-1065, 2015
Improved gate dielectric deposition and enhanced electrical stability for single-layer MoS 2 MOSFET with an AlN interfacial layer
Q Qian, B Li, M Hua, Z Zhang, F Lan, Y Xu, R Yan, KJ Chen
Scientific reports 6 (1), 1-9, 2016
Enhancement-mode GaN double-channel MOS-HEMT with low on-resistance and robust gate recess
J Wei, S Liu, B Li, X Tang, Y Lu, C Liu, M Hua, Z Zhang, G Tang, KJ Chen
2015 IEEE International Electron Devices Meeting (IEDM), 9.4. 1-9.4. 4, 2015
P-doping-free III-nitride high electron mobility light-emitting diodes and transistors
B Li, X Tang, J Wang, KJ Chen
Applied Physics Letters 105 (3), 032105, 2014
Classification of bound exciton complexes in bulk ZnO by magnetophotoluminescence spectroscopy
L Ding, BK Li, HT He, WK Ge, JN Wang, JQ Ning, XM Dai, CC Ling, SJ Xu
Journal of Applied Physics 105 (5), 053511, 2009
Tunable Interaction-Induced Localization of Surface Electrons in Antidot Nanostructured Bi2Te3 Thin Films
HC Liu, HZ Lu, HT He, B Li, SG Liu, QL He, G Wang, IK Sou, SQ Shen, ...
ACS nano 8 (9), 9616-9621, 2014
Fermi-level depinning and hole injection induced two-dimensional electron related radiative emissions from a forward biased Ni/Au-AlGaN/GaN Schottky diode
BK Li, MJ Wang, KJ Chen, JN Wang
Applied physics letters 95 (23), 232111, 2009
Optical pumping of deep traps in AlGaN/GaN-on-Si HEMTs using an on-chip Schottky-on-heterojunction light-emitting diode
B Li, X Tang, KJ Chen
Applied Physics Letters 106 (9), 093505, 2015
Control of secondary phases and disorder degree in Cu2ZnSnS4 films by sulfurization at varied subatmospheric pressures
IS Babichuk, MO Semenenko, S Golovynskyi, R Caballero, OI Datsenko, ...
Solar Energy Materials and Solar Cells 200, 109915, 2019
Simulation study of a power MOSFET with built-in channel diode for enhanced reverse recovery performance
M Zhang, J Wei, X Zhou, H Jiang, B Li, KJ Chen
IEEE Electron Device Letters 40 (1), 79-82, 2018
Interfacially Bound Exciton State in a Hybrid Structure of Monolayer WS2 and InGaN Quantum Dots
G Cheng, B Li, C Zhao, X Yan, H Wang, KM Lau, J Wang
Nano letters 18 (9), 5640-5645, 2018
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