| Gallium nitride-based complementary logic integrated circuits Z Zheng, L Zhang, W Song, S Feng, H Xu, J Sun, S Yang, T Chen, J Wei, ... Nature Electronics 4 (8), 595-603, 2021 | 145 | 2021 |
| High and / Ratio Enhancement-Mode Buried -Channel GaN MOSFETs on -GaN Gate Power HEMT Platform Z Zheng, W Song, L Zhang, S Yang, J Wei, KJ Chen IEEE Electron Device Letters 41 (1), 26-29, 2019 | 98 | 2019 |
| p-GaN Gate HEMT With Surface Reinforcement for Enhanced Gate Reliability L Zhang, Z Zheng, S Yang, W Song, J He, KJ Chen IEEE Electron Device Letters 42 (1), 22-25, 2020 | 69 | 2020 |
| A 1.9-kV/2.61-m cm2 Lateral GaN Schottky Barrier Diode on Silicon Substrate With Tungsten Anode and Low Turn-ON Voltage of 0.35 V T Zhang, J Zhang, H Zhou, T Chen, K Zhang, Z Hu, Z Bian, K Dang, ... IEEE Electron Device Letters 39 (10), 1548-1551, 2018 | 61 | 2018 |
| E-Mode p-n Junction/AlGaN/GaN (PNJ) HEMTs C Wang, M Hua, J Chen, S Yang, Z Zheng, J Wei, L Zhang, KJ Chen IEEE Electron Device Letters 41 (4), 545-548, 2020 | 51 | 2020 |
| Planar GaN power integration–the world is flat KJ Chen, J Wei, G Tang, H Xu, Z Zheng, L Zhang, W Song 2020 IEEE International Electron Devices Meeting (IEDM), 27.1. 1-27.1. 4, 2020 | 44 | 2020 |
| Monolithically integrated GaN ring oscillator based on high-performance complementary logic inverters Z Zheng, W Song, L Zhang, S Yang, J Wei, KJ Chen IEEE Electron Device Letters 42 (1), 26-29, 2020 | 42 | 2020 |
| High breakdown-voltage (> 2200 V) AlGaN-channel HEMTs with ohmic/Schottky hybrid drains W Zhang, J Zhang, M Xiao, L Zhang, Y Hao IEEE Journal of the Electron Devices Society 6, 931-935, 2018 | 30 | 2018 |
| Trap state analysis in AlGaN/GaN/AlGaN double heterostructure high electron mobility transistors at high temperatures WH Zhang, JS Xue, L Zhang, T Zhang, ZY Lin, JC Zhang, Y Hao Applied Physics Letters 110 (25), 252102, 2017 | 27 | 2017 |
| -GaN Gate Power Transistor With Distributed Built-in Schottky Barrier Diode for Low-loss Reverse Conduction L Zhang, J Wei, Z Zheng, W Song, S Yang, H Xu, KJ Chen IEEE Electron Device Letters 41 (3), 341-344, 2020 | 26 | 2020 |
| AlGaN-channel gate injection transistor on silicon substrate with adjustable 4–7-V threshold voltage and 1.3-kV breakdown voltage L Zhang, H Zhou, W Zhang, K Dang, T Zhang, P Ma, X Ma, J Zhang, ... IEEE Electron Device Letters 39 (7), 1026-1029, 2018 | 25 | 2018 |
| Enhancement-mode GaN p-channel MOSFETs for power integration Z Zheng, W Song, L Zhang, S Yang, H Xu, RKY Wong, J Wei, KJ Chen 2020 32nd International Symposium on Power Semiconductor Devices and ICs …, 2020 | 24 | 2020 |
| E-mode p-GaN Gate HEMT with p-FET Bridge for Higher VTH and Enhanced VTH Stability M Hua, J Chen, C Wang, L Liu, L Li, J Zhao, Z Jiang, J Wei, L Zhang, ... 2020 IEEE International Electron Devices Meeting (IEDM), 23.1. 1-23.1. 4, 2020 | 23 | 2020 |
| GaN HEMT with convergent channel for low intrinsic knee voltage Z Zheng, W Song, J Lei, Q Qian, J Wei, M Hua, S Yang, L Zhang, KJ Chen IEEE Electron Device Letters 41 (9), 1304-1307, 2020 | 19 | 2020 |
| SiN/in-situ-GaON staggered gate stack on p-GaN for enhanced stability in buried-channel GaN p-FETs L Zhang, Z Zheng, Y Cheng, YH Ng, S Feng, W Song, T Chen, KJ Chen 2021 IEEE International Electron Devices Meeting (IEDM), 5.3. 1-5.3. 4, 2021 | 18 | 2021 |
| E-mode pn junction/AlGaN/GaN HEMTs with enhanced gate reliability C Wang, M Hua, S Yang, L Zhang, KJ Chen 2020 32nd International Symposium on Power Semiconductor Devices and ICs …, 2020 | 18 | 2020 |
| Threshold Voltage Instability of Enhancement-Mode GaN Buried p-Channel MOSFETs Z Zheng, L Zhang, W Song, T Chen, S Feng, YH Ng, J Sun, H Xu, S Yang, ... IEEE Electron Device Letters 42 (11), 1584-1587, 2021 | 17 | 2021 |
| Al0.3Ga0.7N/GaN (10 nm)/Al0.1Ga0.9N HEMTs With Low Leakage Current and High Three-Terminal Breakdown Voltage W Zhang, J Zhang, M Xiao, L Zhang, Y Hao IEEE Electron Device Letters 39 (9), 1370-1372, 2018 | 15 | 2018 |
| GaN MIS-HEMTs With Surface Reinforcement for Suppressed Hot-Electron-Induced Degradation S Yang, Z Zheng, L Zhang, W Song, KJ Chen IEEE Electron Device Letters 42 (4), 489-492, 2021 | 13 | 2021 |
| Decoupling of Forward and Reverse Turn-on Threshold Voltages in Schottky-Type p-GaN Gate HEMTs J Chen, M Hua, C Wang, L Liu, L Li, J Wei, L Zhang, Z Zheng, KJ Chen IEEE Electron Device Letters 42 (7), 986-989, 2021 | 12 | 2021 |
Kevin J. ChenHong Kong University of Science and TechnologyVerified email at ust.hk
