Current transport mechanisms in n‐InSe/p‐CdTe heterojunctions PM Gorley, ZM Grushka, VP Makhniy, OG Grushka, OA Chervinsky, ... physica status solidi c 5 (12), 3622-3625, 2008 | 33 | 2008 |
Mercury indium telluride–a new promising material for photonic structures and devices ZM Grushka, PN Gorley, OG Grushka, PP Horley, YI Radevych, Z Zhuo ICO20: Materials and Nanostructures 6029, 304-312, 2006 | 18 | 2006 |
The effect of irradiation with electrons on the electrical parameters of Hg3In2Te6 OG Grushka, VT Maslyuk, SM Chupyra, OM Mysliuk, SV Bilichuk, ... Semiconductors 46, 312-314, 2012 | 11 | 2012 |
An impurity band in Hg3In2Te6 crystals doped with silicon PN Gorlei, OG Grushka Semiconductors 37, 168-171, 2003 | 7 | 2003 |
Behaviour of manganese impurity in Hg 3 In 2 Te 6 OG Grushka, ZM Grushka, VM Frasunyak, VS Gerasimenko Fizika i Tekhnika Poluprovodnikov 33 (12), 1416-1419, 1999 | 7 | 1999 |
Hg3In2Te6: a promising material for optoelectronic devices P Gorley, Z Grushka, Y Radevych, O Grushka, I Zabolotsky Photonics North 2007 6796, 592-601, 2007 | 5 | 2007 |
Temperature dependence of the concentration of carriers in CdIn {sub 2} Te {sub 4} crystals PM Gorley, OG Grushka, OI Vorobets, ZM Grushka Ukrayins' kij Fyizichnij Zhurnal (Kiev) 51, 2006 | 5 | 2006 |
The effect of gadolinium doping on physical properties of Hg 3 In 2 Te 6 OG Grushka, PM Gorlej, AV Bestsennyj, ZM Grushka Fizika i Tekhnika Poluprovodnikov 34 (10), 1197-1200, 2000 | 5 | 2000 |
The effect of gadolinium doping on physical properties of Hg 3 In 2 Te 6 OG Grushka, PM Gorlej, AV Bestsennyj, ZM Grushka Fizika i Tekhnika Poluprovodnikov 34 (10), 1197-1200, 2000 | 5 | 2000 |
Electronic Processes in CdIn2Te4 Crystals OG Grushka, SM Chupyra, SV Bilichuk, OA Parfenyuk Semiconductors 52 (8), 973-976, 2018 | 4 | 2018 |
Effect of deviations from the stoichiometric composition on the electrical and photoelectrical properties of the Hg3In2Te6 compound OG Grushka, AI Savchuk, SM Chupyra, OM Mysliuk, SV Bilichuk, ... Semiconductors 48, 1271-1274, 2014 | 4 | 2014 |
Electrical properties of n-SnS2/n-CdIn2Te4 heterostructure PM Gorley, ZM Grushka, OG Grushka, PP Gorley, II Zabolotsky Semiconductor physics, quantum electronics & optoelectronics, 444-447, 2010 | 4 | 2010 |
The Influence of Iron Impurity on the Hg~ 3In~ 2Te~ 6 Properties OG Grushka, PM Gorlei, AP Bakhtinov, VM Frasunyak, VS Gerasimenko UKRAINS'KYI FIZYCHNYI ZHURNAL 46 (3), 365-368, 2001 | 4 | 2001 |
Direct current transport mechanisms in n-InSe/p-CdTe heterostructure PM Gorley, IV Prokopenko, ZM Grushka, VP Makhniy, OG Grushka, ... Semiconductor Physics Quantum Electronics & Optoelectronics, 2008 | 3 | 2008 |
THE INFLUENCE OF γ-IRRADIATION ON ELECTRICAL PROPERTIES OF CdIn2Te4 CRYSTALS OG Grushka, VT Maslyuk, SM Chupyra, OM Myslyuk, OM Slyotov Telecommunications and Radio Engineering 78 (11), 2019 | 2 | 2019 |
Anomalous thermoelectric power in Hg3In2Te6 crystals OG Grushka Semiconductors 50 (6), 719-721, 2016 | 2 | 2016 |
Electrical and optical properties of Mn-doped Hg3In2Te6 crystals OG Grushka, SM Chupyra, OM Mysliuk, SV Bilichuk, DP Koziarskyi Semiconductors 47, 1141-1144, 2013 | 2 | 2013 |
Effect of gadolinium impurity on transmittance and reflectance of Hg3In2Te6 crystals PM Gorlei, OG Grushka, ZM Grushka Semiconductors 37, 256-258, 2003 | 2 | 2003 |
Localized states in Hg3In2Te6: Cr compounds PN Gorlei, OG Grushka, VM Frasunyak Semiconductors 36, 501-504, 2002 | 2 | 2002 |
Effect of doping with gadolinium on the physical properties of Hg3In2Te6 OG Grushka, PM Gorlei, AV Bestsennyi, ZM Grushka Semiconductors 34, 1147-1150, 2000 | 2 | 2000 |