Vanya Darakchieva
Vanya Darakchieva
Подтвержден адрес электронной почты в домене
Infrared dielectric functions and phonon modes of high-quality ZnO films
N Ashkenov, BN Mbenkum, C Bundesmann, V Riede, M Lorenz, ...
Journal of Applied Physics 93 (1), 126-133, 2003
Two-dimensional electron gas density in heterostructures
M Gonschorek, JF Carlin, E Feltin, MA Py, N Grandjean, V Darakchieva, ...
Journal of Applied Physics 103 (9), 093714, 2008
On the organization and thermal behavior of functional groups on Ti3C2 MXene surfaces in vacuum
I Persson, LÅ Näslund, J Halim, MW Barsoum, V Darakchieva, J Palisaitis, ...
2D Materials 5 (1), 015002, 2017
Anisotropy, phonon modes, and free charge carrier parameters in monoclinic -gallium oxide single crystals
M Schubert, R Korlacki, S Knight, T Hofmann, S Schöche, V Darakchieva, ...
Physical Review B 93 (12), 125209, 2016
Anisotropic strain and phonon deformation potentials in GaN
V Darakchieva, T Paskova, M Schubert, H Arwin, PP Paskov, B Monemar, ...
Physical Review B 75 (19), 195217, 2007
On the lattice parameters of GaN
V Darakchieva, B Monemar, A Usui
Applied physics letters 91 (3), 031911, 2007
Very high growth rate of 4H-SiC epilayers using the chlorinated precursor methyltrichlorosilane (MTS)
H Pedersen, S Leone, A Henry, FC Beyer, V Darakchieva, E Janzén
Journal of crystal growth 307 (2), 334-340, 2007
High-quality bulk -plane GaN sliced from boules in comparison to heteroepitaxially grown thick films on -plane sapphire
T Paskova, R Kroeger, S Figge, D Hommel, V Darakchieva, B Monemar, ...
Applied physics letters 89 (5), 051914, 2006
2D transition metal carbides (MXenes) for carbon capture
I Persson, J Halim, H Lind, TW Hansen, JB Wagner, LÅ Näslund, ...
Advanced Materials 31 (2), 1805472, 2019
Properties of nonpolar a-plane GaN films grown by HVPE with AlN buffers
T Paskova, V Darakchieva, PP Paskov, J Birch, E Valcheva, POA Persson, ...
Journal of crystal growth 281 (1), 55-61, 2005
Strain-related structural and vibrational properties of thin epitaxial AlN layers
V Darakchieva, J Birch, M Schubert, T Paskova, S Tungasmita, G Wagner, ...
Physical Review B 70 (4), 045411, 2004
Tailoring Structure, Composition, and Energy Storage Properties of MXenes from Selective Etching of In‐Plane, Chemically Ordered MAX Phases
I Persson, A El Ghazaly, Q Tao, J Halim, S Kota, V Darakchieva, ...
Small 14 (17), 1703676, 2018
Effects of strain and composition on the lattice parameters and applicability of Vegard’s rule in Al-rich films grown on sapphire
V Darakchieva, M Beckers, MY Xie, L Hultman, B Monemar, JF Carlin, ...
Journal of Applied Physics 103 (10), 103513, 2008
Band-to-band transitions, selection rules, effective mass, and excitonic contributions in monoclinic
A Mock, R Korlacki, C Briley, V Darakchieva, B Monemar, Y Kumagai, ...
Physical Review B 96 (24), 245205, 2017
Deformation potentials of the and modes of InN
V Darakchieva, PP Paskov, E Valcheva, T Paskova, B Monemar, ...
Applied physics letters 84 (18), 3636-3638, 2004
Lattice parameters, deviations from Vegard’s rule, and phonons in InAlN
V Darakchieva, MY Xie, F Tasnadi, IA Abrikosov, L Hultman, B Monemar, ...
Applied Physics Letters 93 (26), 261908, 2008
Lattice parameters of GaN layers grown on a-plane sapphire: Effect of in-plane strain anisotropy
V Darakchieva, PP Paskov, T Paskova, E Valcheva, B Monemar, ...
Applied physics letters 82 (5), 703-705, 2003
Free electron behavior in InN: On the role of dislocations and surface electron accumulation
V Darakchieva, T Hofmann, M Schubert, BE Sernelius, B Monemar, ...
Applied Physics Letters 94 (2), 022109, 2009
Direct graphene growth on Co3O4 (111) by molecular beam epitaxy
M Zhou, FL Pasquale, PA Dowben, A Boosalis, M Schubert, ...
Journal of Physics: Condensed Matter 24 (7), 072201, 2012
Optical Hall effect in hexagonal InN
T Hofmann, V Darakchieva, B Monemar, H Lu, WJ Schaff, M Schubert
Journal of electronic materials 37 (5), 611-615, 2008
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