Infrared dielectric functions and phonon modes of high-quality ZnO films N Ashkenov, BN Mbenkum, C Bundesmann, V Riede, M Lorenz, ...
Journal of applied physics 93 (1), 126-133, 2003
772 2003 On the organization and thermal behavior of functional groups on Ti3C2 MXene surfaces in vacuum I Persson, LÅ Näslund, J Halim, MW Barsoum, V Darakchieva, J Palisaitis, ...
2D Materials 5 (1), 015002, 2017
257 2017 Two-dimensional electron gas density in Al1− xInxN/AlN/GaN heterostructures (0.03≤ x≤ 0.23) M Gonschorek, JF Carlin, E Feltin, MA Py, N Grandjean, V Darakchieva, ...
Journal of Applied Physics 103 (9), 2008
222 2008 2D transition metal carbides (MXenes) for carbon capture I Persson, J Halim, H Lind, TW Hansen, JB Wagner, LÅ Näslund, ...
Advanced Materials 31 (2), 1805472, 2019
207 2019 Tailoring structure, composition, and energy storage properties of MXenes from selective etching of in‐plane, chemically ordered MAX phases I Persson, A El Ghazaly, Q Tao, J Halim, S Kota, V Darakchieva, ...
Small 14 (17), 1703676, 2018
207 2018 Anisotropy, phonon modes, and free charge carrier parameters in monoclinic -gallium oxide single crystals M Schubert, R Korlacki, S Knight, T Hofmann, S Schöche, V Darakchieva, ...
Physical Review B 93 (12), 125209, 2016
192 2016 Band-to-band transitions, selection rules, effective mass, and excitonic contributions in monoclinic A Mock, R Korlacki, C Briley, V Darakchieva, B Monemar, Y Kumagai, ...
Physical Review B 96 (24), 245205, 2017
147 2017 On the lattice parameters of GaN V Darakchieva, B Monemar, A Usui
Applied Physics Letters 91 (3), 2007
139 2007 Anisotropic strain and phonon deformation potentials in GaN V Darakchieva, T Paskova, M Schubert, H Arwin, PP Paskov, B Monemar, ...
Physical Review B 75 (19), 195217, 2007
124 2007 How much oxygen can a MXene surface take before it breaks? I Persson, J Halim, TW Hansen, JB Wagner, V Darakchieva, J Palisaitis, ...
Advanced Functional Materials 30 (47), 1909005, 2020
118 2020 Very high growth rate of 4H-SiC epilayers using the chlorinated precursor methyltrichlorosilane (MTS) H Pedersen, S Leone, A Henry, FC Beyer, V Darakchieva, E Janzén
Journal of crystal growth 307 (2), 334-340, 2007
116 2007 High-quality bulk a-plane GaN sliced from boules in comparison to heteroepitaxially grown thick films on r-plane sapphire T Paskova, R Kroeger, S Figge, D Hommel, V Darakchieva, B Monemar, ...
Applied physics letters 89 (5), 2006
99 2006 Electronic and optical characterization of 2D Ti2C and Nb2C (MXene) thin films J Halim, I Persson, EJ Moon, P Kühne, V Darakchieva, POÅ Persson, ...
Journal of Physics: Condensed Matter 31 (16), 165301, 2019
98 2019 Properties of nonpolar a-plane GaN films grown by HVPE with AlN buffers T Paskova, V Darakchieva, PP Paskov, J Birch, E Valcheva, POA Persson, ...
Journal of crystal growth 281 (1), 55-61, 2005
81 2005 Conductive polymer nanoantennas for dynamic organic plasmonics S Chen, ESH Kang, M Shiran Chaharsoughi, V Stanishev, P Kühne, ...
Nature Nanotechnology 15 (1), 35-40, 2020
78 2020 Strain-related structural and vibrational properties of thin epitaxial AlN layers V Darakchieva, J Birch, M Schubert, T Paskova, S Tungasmita, G Wagner, ...
Physical Review B 70 (4), 045411, 2004
76 2004 Effects of strain and composition on the lattice parameters and applicability of Vegard’s rule in Al-rich Al1− xInxN films grown on sapphire V Darakchieva, M Beckers, MY Xie, L Hultman, B Monemar, JF Carlin, ...
Journal of Applied Physics 103 (10), 2008
75 2008 The 2022 magneto-optics roadmap A Kimel, A Zvezdin, S Sharma, S Shallcross, N De Sousa, A García-Martín, ...
Journal of Physics D: Applied Physics 55 (46), 463003, 2022
66 2022 Lattice parameters, deviations from Vegard’s rule, and E2 phonons in InAlN V Darakchieva, MY Xie, F Tasnadi, IA Abrikosov, L Hultman, B Monemar, ...
Applied Physics Letters 93 (26), 2008
63 2008 Epitaxial CVD growth of sp2 ‐hybridized boron nitride using aluminum nitride as buffer layer M Chubarov, H Pedersen, H Högberg, V Darakchieva, J Jensen, ...
physica status solidi (RRL)–Rapid Research Letters 5 (10‐11), 397-399, 2011
60 2011