| An optically pumped 2.5 μm GeSn laser on Si operating at 110 K S Al-Kabi, SA Ghetmiri, J Margetis, T Pham, Y Zhou, W Dou, B Collier, ... Applied Physics Letters 109 (17), 171105, 2016 | 128 | 2016 |
| Direct-bandgap GeSn grown on silicon with 2230 nm photoluminescence SA Ghetmiri, W Du, J Margetis, A Mosleh, L Cousar, BR Conley, ... Applied Physics Letters 105 (15), 151109, 2014 | 127 | 2014 |
| Single-crystal II-VI on Si single-junction and tandem solar cells M Carmody, S Mallick, J Margetis, R Kodama, T Biegala, D Xu, ... Applied physics letters 96 (15), 153502, 2010 | 83 | 2010 |
| Room-temperature electroluminescence from Ge/Ge1-xSnx/Ge diodes on Si substrates W Du, Y Zhou, SA Ghetmiri, A Mosleh, BR Conley, A Nazzal, RA Soref, ... Applied Physics Letters 104 (24), 241110, 2014 | 75 | 2014 |
| Temperature dependent spectral response and detectivity of GeSn photoconductors on silicon for short wave infrared detection BR Conley, A Mosleh, SA Ghetmiri, W Du, RA Soref, G Sun, J Margetis, ... Optics express 22 (13), 15639-15652, 2014 | 69 | 2014 |
| Si-based GeSn lasers with wavelength coverage of 2–3 μm and operating temperatures up to 180 K J Margetis, S Al-Kabi, W Du, W Dou, Y Zhou, T Pham, P Grant, S Ghetmiri, ... ACS Photonics 5 (3), 827-833, 2017 | 67 | 2017 |
| Competition of optical transitions between direct and indirect bandgaps in Ge1−xSnx W Du, SA Ghetmiri, BR Conley, A Mosleh, A Nazzal, RA Soref, G Sun, ... Applied Physics Letters 105 (5), 051104, 2014 | 65 | 2014 |
| Growth and characterization of epitaxial Ge1-XSnx alloys and heterostructures using a commercial CVD system J Margetis, SA Ghetmiri, W Du, BR Conley, A Mosleh, R Soref, G Sun, ... ECS Transactions 64 (6), 711-720, 2014 | 59 | 2014 |
| Systematic study of Si-based GeSn photodiodes with 2.6 µm detector cutoff for short-wave infrared detection T Pham, W Du, H Tran, J Margetis, J Tolle, G Sun, RA Soref, HA Naseem, ... Optics express 24 (5), 4519-4531, 2016 | 54 | 2016 |
| Methods of forming highly p-type doped germanium tin films and structures and devices including the films J Margetis, J Tolle US Patent 9,647,114, 2017 | 53 | 2017 |
| Si based GeSn photoconductors with a 1.63 A/W peak responsivity and a 2.4 μm long-wavelength cutoff BR Conley, J Margetis, W Du, H Tran, A Mosleh, SA Ghetmiri, J Tolle, ... Applied Physics Letters 105 (22), 221117, 2014 | 51 | 2014 |
| Radial and thickness control via biased multi-port injection settings J Margetis, J Tolle, G Bartlett, N Bhargava US Patent App. 15/863,340, 2018 | 43* | 2018 |
| Systematic study of Ge1−xSnx absorption coefficient and refractive index for the device applications of Si-based optoelectronics H Tran, W Du, SA Ghetmiri, A Mosleh, G Sun, RA Soref, J Margetis, J Tolle, ... Journal of Applied Physics 119 (10), 103106, 2016 | 39 | 2016 |
| Study of low-defect and strain-relaxed GeSn growth via reduced pressure CVD in H2 and N2 carrier gas J Margetis, A Mosleh, S Al-Kabi, SA Ghetmiri, W Du, W Dou, M Benamara, ... Journal of Crystal Growth 463, 128-133, 2017 | 37 | 2017 |
| Systematic study of GeSn heterostructure-based light-emitting diodes towards mid-infrared applications Y Zhou, W Dou, W Du, T Pham, SA Ghetmiri, S Al-Kabi, A Mosleh, M Alher, ... Journal of Applied Physics 120 (2), 023102, 2016 | 36 | 2016 |
| Si-based Ge0. 9Sn0. 1 photodetector with peak responsivity of 2.85 A/W and longwave cutoff at 2.4 μm TN Pham, W Du, BR Conley, J Margetis, G Sun, RA Soref, J Tolle, B Li, ... Electronics letters 51 (11), 854-856, 2015 | 34 | 2015 |
| Shortwave-infrared photoluminescence from Ge1−xSnx thin films on silicon SA Ghetmiri, W Du, BR Conley, A Mosleh, A Nazzal, G Sun, RA Soref, ... Journal of Vacuum Science & Technology B, Nanotechnology and …, 2014 | 34 | 2014 |
| Radial and thickness control via biased multi-port injection settings J Margetis, J Tolle, G Bartlett, N Bhargava US Patent 9,892,913, 2018 | 33 | 2018 |
| Formation of epitaxial layers via dislocation filtering J Margetis, J Tolle US Patent App. 15/627,189, 2017 | 33 | 2017 |
| Study of a SiGeSn/GeSn/SiGeSn structure toward direct bandgap type-I quantum well for all group-IV optoelectronics SA Ghetmiri, Y Zhou, J Margetis, S Al-Kabi, W Dou, A Mosleh, W Du, ... Optics letters 42 (3), 387-390, 2017 | 31 | 2017 |
