|An optically pumped 2.5 μm GeSn laser on Si operating at 110 K|
S Al-Kabi, SA Ghetmiri, J Margetis, T Pham, Y Zhou, W Dou, B Collier, ...
Applied Physics Letters 109 (17), 171105, 2016
|Direct-bandgap GeSn grown on silicon with 2230 nm photoluminescence|
SA Ghetmiri, W Du, J Margetis, A Mosleh, L Cousar, BR Conley, ...
Applied Physics Letters 105 (15), 151109, 2014
|Single-crystal II-VI on Si single-junction and tandem solar cells|
M Carmody, S Mallick, J Margetis, R Kodama, T Biegala, D Xu, ...
Applied physics letters 96 (15), 153502, 2010
|Room-temperature electroluminescence from Ge/Ge1-xSnx/Ge diodes on Si substrates|
W Du, Y Zhou, SA Ghetmiri, A Mosleh, BR Conley, A Nazzal, RA Soref, ...
Applied Physics Letters 104 (24), 241110, 2014
|Temperature dependent spectral response and detectivity of GeSn photoconductors on silicon for short wave infrared detection|
BR Conley, A Mosleh, SA Ghetmiri, W Du, RA Soref, G Sun, J Margetis, ...
Optics express 22 (13), 15639-15652, 2014
|Si-based GeSn lasers with wavelength coverage of 2–3 μm and operating temperatures up to 180 K|
J Margetis, S Al-Kabi, W Du, W Dou, Y Zhou, T Pham, P Grant, S Ghetmiri, ...
ACs Photonics 5 (3), 827-833, 2017
|Competition of optical transitions between direct and indirect bandgaps in Ge1−xSnx|
W Du, SA Ghetmiri, BR Conley, A Mosleh, A Nazzal, RA Soref, G Sun, ...
Applied Physics Letters 105 (5), 051104, 2014
|Methods of forming highly p-type doped germanium tin films and structures and devices including the films|
J Margetis, J Tolle
US Patent 9,647,114, 2017
|Systematic study of Si-based GeSn photodiodes with 2.6 µm detector cutoff for short-wave infrared detection|
T Pham, W Du, H Tran, J Margetis, J Tolle, G Sun, RA Soref, HA Naseem, ...
Optics express 24 (5), 4519-4531, 2016
|Growth and characterization of epitaxial Ge1-XSnx alloys and heterostructures using a commercial CVD system|
J Margetis, SA Ghetmiri, W Du, BR Conley, A Mosleh, R Soref, G Sun, ...
ECS Transactions 64 (6), 711, 2014
|Si based GeSn photoconductors with a 1.63 A/W peak responsivity and a 2.4 μm long-wavelength cutoff|
BR Conley, J Margetis, W Du, H Tran, A Mosleh, SA Ghetmiri, J Tolle, ...
Applied Physics Letters 105 (22), 221117, 2014
|Radial and thickness control via biased multi-port injection settings|
J Margetis, J Tolle, G Bartlett, N Bhargava
US Patent 9,892,913, 2018
|Formation of epitaxial layers via dislocation filtering|
J Margetis, J Tolle
US Patent 10,388,509, 2019
|Methods of forming silicon germanium tin films and structures and devices including the films|
J Margetis, J Tolle
US Patent 9,905,420, 2018
|Systematic study of Ge1−xSnx absorption coefficient and refractive index for the device applications of Si-based optoelectronics|
H Tran, W Du, SA Ghetmiri, A Mosleh, G Sun, RA Soref, J Margetis, J Tolle, ...
Journal of Applied Physics 119 (10), 103106, 2016
|Systematic study of GeSn heterostructure-based light-emitting diodes towards mid-infrared applications|
Y Zhou, W Dou, W Du, T Pham, SA Ghetmiri, S Al-Kabi, A Mosleh, M Alher, ...
Journal of Applied Physics 120 (2), 023102, 2016
|Study of low-defect and strain-relaxed GeSn growth via reduced pressure CVD in H2 and N2 carrier gas|
J Margetis, A Mosleh, S Al-Kabi, SA Ghetmiri, W Du, W Dou, M Benamara, ...
Journal of Crystal Growth 463, 128-133, 2017
|Si-based Ge0. 9Sn0. 1 photodetector with peak responsivity of 2.85 A/W and longwave cutoff at 2.4 μm|
TN Pham, W Du, BR Conley, J Margetis, G Sun, RA Soref, J Tolle, B Li, ...
Electronics letters 51 (11), 854-856, 2015
|Shortwave-infrared photoluminescence from Ge1−xSnx thin films on silicon|
SA Ghetmiri, W Du, BR Conley, A Mosleh, A Nazzal, G Sun, RA Soref, ...
Journal of Vacuum Science & Technology B, Nanotechnology and …, 2014
|Study of a SiGeSn/GeSn/SiGeSn structure toward direct bandgap type-I quantum well for all group-IV optoelectronics|
SA Ghetmiri, Y Zhou, J Margetis, S Al-Kabi, W Dou, A Mosleh, W Du, ...
Optics letters 42 (3), 387-390, 2017