Nguyen Tien Son
Nguyen Tien Son
professor i semiconductor physics, Linköping University
Подтвержден адрес электронной почты в домене ifm.liu.se
Название
Процитировано
Процитировано
Год
Coherent control of single spins in silicon carbide at room temperature
M Widmann, SY Lee, T Rendler, NT Son, H Fedder, S Paik, LP Yang, ...
Nature materials 14 (2), 164-168, 2015
4172015
Isolated electron spins in silicon carbide with millisecond coherence times
DJ Christle, AL Falk, P Andrich, PV Klimov, JU Hassan, NT Son, E Janzén, ...
Nature materials 14 (2), 160-163, 2015
3322015
Deep level defects in electron-irradiated SiC epitaxial layers
C Hemmingsson, NT Son, O Kordina, JP Bergman, E Janzén, ...
Journal of applied physics 81 (9), 6155-6159, 1997
3001997
Silicon vacancy related defect in 4H and 6H SiC
E Sörman, NT Son, WM Chen, O Kordina, C Hallin, E Janzén
Physical Review B 61 (4), 2613, 2000
2472000
Divacancy in 4H-SiC
NT Son, P Carlsson, J Ul Hassan, E Janzén, T Umeda, J Isoya, A Gali, ...
Physical review letters 96 (5), 055501, 2006
2122006
Electrically active defects in n-type 4H–silicon carbide grown in a vertical hot-wall reactor
J Zhang, L Storasta, JP Bergman, NT Son, E Janzén
Journal of Applied Physics 93 (8), 4708-4714, 2003
1902003
Negative- System of Carbon Vacancy in -SiC
NT Son, XT Trinh, LS Løvlie, BG Svensson, K Kawahara, J Suda, ...
Physical review letters 109 (18), 187603, 2012
1882012
Growth of SiC by “Hot‐Wall” CVD and HTCVD
O Kordina, C Hallin, A Henry, JP Bergman, I Ivanov, A Ellison, NT Son, ...
physica status solidi (b) 202 (1), 321-334, 1997
1761997
Negative-U centers in 4H silicon carbide
CG Hemmingsson, NT Son, A Ellison, J Zhang, E Janzén
Physical Review B 58 (16), R10119, 1998
1511998
Electron effective masses in 4H SiC
NT Son, WM Chen, O Kordina, AO Konstantinov, B Monemar, E Janzén, ...
Applied physics letters 66 (9), 1074-1076, 1995
1341995
Isolated spin qubits in SiC with a high-fidelity infrared spin-to-photon interface
DJ Christle, PV Klimov, F Charles, K Szász, V Ivády, V Jokubavicius, ...
Physical Review X 7 (2), 021046, 2017
1302017
Carbon vacancy-related defect in 4H and 6H SiC
NT Son, PN Hai, E Janzén
Physical Review B 63 (20), 201201, 2001
1222001
Ab initio density-functional supercell calculations of hydrogen defects in cubic SiC
B Aradi, A Gali, P Deák, JE Lowther, NT Son, E Janzén, WJ Choyke
Physical Review B 63 (24), 245202, 2001
1212001
Determination of the electron effective-mass tensor in 4H SiC
D Volm, BK Meyer, DM Hofmann, WM Chen, NT Son, C Persson, ...
Physical Review B 53 (23), 15409, 1996
1121996
Electron effective masses and mobilities in high‐purity 6H–SiC chemical vapor deposition layers
NT Son, O Kordina, AO Konstantinov, WM Chen, E Sörman, B Monemar, ...
Applied physics letters 65 (25), 3209-3211, 1994
1121994
Aggregation of carbon interstitials in silicon carbide: A theoretical study
A Gali, P Deák, P Ordejón, NT Son, E Janzén, WJ Choyke
Physical Review B 68 (12), 125201, 2003
1092003
Scalable quantum photonics with single color centers in silicon carbide
M Radulaski, M Widmann, M Niethammer, JL Zhang, SY Lee, T Rendler, ...
Nano letters 17 (3), 1782-1786, 2017
932017
Identification of the Carbon Antisite-Vacancy Pair in -SiC
T Umeda, NT Son, J Isoya, E Janzén, T Ohshima, N Morishita, H Itoh, ...
Physical review letters 96 (14), 145501, 2006
922006
High-fidelity spin and optical control of single silicon-vacancy centres in silicon carbide
R Nagy, M Niethammer, M Widmann, YC Chen, P Udvarhelyi, C Bonato, ...
Nature communications 10 (1), 1-8, 2019
862019
Correlation between the antisite pair and the D I center in SiC
A Gali, P Deák, E Rauls, NT Son, IG Ivanov, FHC Carlsson, E Janzén, ...
Physical Review B 67 (15), 155203, 2003
862003
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