Stable organic thin-film transistors X Jia, C Fuentes-Hernandez, CY Wang, Y Park, B Kippelen
Science advances 4 (1), eaao1705, 2018
120 2018 0.34 AlGaN/GaN-on-Si Large Schottky Barrier Diode With Recessed Dual Anode Metal HS Lee, DY Jung, Y Park, J Na, HG Jang, HS Lee, CH Jun, J Park, ...
IEEE Electron Device Letters 36 (11), 1132-1134, 2015
52 2015 Skin-like low-noise elastomeric organic photodiodes Y Park, C Fuentes-Hernandez, K Kim, WF Chou, FA Larrain, S Graham, ...
Science Advances 7 (51), eabj6565, 2021
35 2021 X-to-K band broadband watt-level power amplifier using stacked-FET unit cells Y Park, Y Kim, W Choi, J Woo, Y Kwon
2011 IEEE Radio Frequency Integrated Circuits Symposium, 1-4, 2011
30 2011 60 GHz broadband image rejection receiver using varactor tuning J Kim, W Choi, Y Park, Y Kwon
2010 IEEE Radio Frequency Integrated Circuits Symposium, 381-384, 2010
25 2010 Low onset voltage of GaN on Si Schottky barrier diode using various recess depths Y Park, JJ Kim, W Chang, HG Jang, J Na, H Lee, CH Jun, H Cha, JK Mun, ...
Electronics letters 50 (16), 1164-1165, 2014
22 2014 Measurements of the field-effect electron mobility of the acceptor ITIC Y Park, C Fuentes-Hernandez, X Jia, FA Larrain, J Zhang, SR Marder, ...
Organic Electronics 58, 290-293, 2018
18 2018 Semiconductor device and method of fabricating the same CH Jun, SC Ko, SH Moon, W Chang, BAE Sung-Bum, YR Park, JH Na, ...
US Patent 9,337,121, 2016
17 2016 Design and evaluation of cascode GaN FET for switching power conversion systems DY Jung, Y Park, HS Lee, CH Jun, HG Jang, J Park, M Kim, SC Ko, ...
ETRI Journal 39 (1), 62-68, 2017
16 2017 Semiconductor device and method of manufacturing the same SC Ko, JK Mun, BG Min, YR Park, H Ahn, JJ Kim, ES Nam
US Patent 9,136,396, 2015
15 2015 Compact 10∼ 13 GHz GaN low noise amplifier MMIC using simple matching and bias circuits W Chang, YR Park, JK Mun, SC Ko, GI Jeon
2014 9th European Microwave Integrated Circuit Conference, 516-519, 2014
15 2014 X-band low noise amplifier MMIC using AlGaN/GaN HEMT technology on SiC substrate W Chang, GI Jeon, YR Park, S Lee, JK Mun
2013 Asia-Pacific Microwave Conference Proceedings (APMC), 681-684, 2013
13 2013 Normally‐off GaN MIS‐HEMT using a combination of recessed‐gate structure and CF4 plasma treatment Y Park, J Kim, W Chang, D Jung, S Bae, J Mun, CH Jun, S Ko, E Nam
physica status solidi (a) 212 (5), 1170-1173, 2015
10 2015 Design of Parasitic Inductance Reduction in GaN Cascode FET for High‐Efficiency Operation W Chang, YR Park, JK Mun, SC Ko
ETRI Journal 38 (1), 133-140, 2016
9 2016 Nitride electronic device and method for manufacturing the same SB Bae, ES Nam, JK Mun, SB Kim, HC Kim, CW Ju, SC Ko, J Lim, HK Ahn, ...
US Patent 8,723,222, 2014
9 2014 X‐band MMIC low‐noise amplifier MMIC on SiC substrate using 0.25‐μm ALGaN/GaN HEMT technology W Chang, GI Jeon, YR Park, JK Mun
Microwave and Optical Technology Letters 56 (1), 96-99, 2014
9 2014 Nitride semiconductor device YR Park, SC Ko, W Chang, JK Mun, BAE Sung-Bum
US Patent 9,136,347, 2015
7 2015 Methods of manufacturing nitride semiconductor devices SC Ko, JK Mun, W Chang, BAE Sung-Bum, YR Park, CH Jun, SH Moon, ...
US Patent 9,159,583, 2015
6 2015 Pulse‐Mode Dynamic R on Measurement of Large‐Scale High‐Power AlGaN/GaN HFET M Kim, Y Park, J Park, DY Jung, CH Jun, SC Ko
ETRI Journal 39 (2), 292-299, 2017
5 2017 Electronical device HS Lee, KH Kim, SC Ko, KIM Zin-Sig, NA Jeho, ES Nam, YR Park, ...
US Patent 9,755,027, 2017
4 2017