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Zhaofu ZHANG
Zhaofu ZHANG
Wuhan University, University of Cambridge, Hong Kong University of Science and Technology
Verified email at whu.edu.cn - Homepage
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Year
(ESI Highly Cited Papers)Theoretical Insights into the Mechanism of Selective Nitrate-to-Ammonia Electroreduction on Single-Atom Catalyst
H Niu, Z Zhang*, X Wang, X Wan, C Shao, Y Guo*
Advanced Functional Materials 31 (11), 2008533, 2021
277*2021
Interface Engineering of Monolayer MoS2/GaN Hybrid Heterostructure: Modified Band Alignment for Photocatalytic Water Splitting Application by Nitridation Treatment
Z Zhang, Q Qian, B Li, KJ Chen
ACS Applied Materials & Interfaces 10 (20), 17419-17426, 2018
2172018
(ESI Highly Cited Papers) Computational Screening Single-Atom Catalysts Supported on g-CN for N2 Reduction: High Activity and Selectivity
H Niu, X Wang, C Shao, Z Zhang*, Y Guo*
ACS Sustainable Chemistry & Engineering 8 (36), 13749, 2020
1762020
(ESI Highly Cited Papers)A durable and pH-universal self-standing MoC–Mo2C heterojunction electrode for efficient hydrogen evolution reaction
W Liu, X Wang, F Wang, K Du, Z Zhang, Y Guo, H Yin, D Wang
Nature Communications 12 (1), 6776, 2021
172*2021
Revealing the oxygen reduction reaction activity origin of single atoms supported on g-C3N4 monolayers: a first-principles study
H Niu, X Wang, C Shao, Y Liu, Z Zhang*, Y Guo*
Journal of Materials Chemistry A 8, 6555-6563, 2020
1482020
(ESI Highly Cited Papers) Single-Atom Rhodium on Defective g-C3N4: A Promising Bifunctional Oxygen Electrocatalyst
H Niu, X Wan, X Wang, C Shao, J Robertson, Z Zhang*, Y Guo*
ACS Sustainable Chemistry & Engineering 9 (9), 3590, 2021
1332021
Integration of LPCVD-SiNxgate dielectric with recessed-gate E-mode GaN MIS-FETs: Toward high performance, high stability and long TDDB lifetime
M Hua, Z Zhang, J Wei, J Lei, G Tang, K Fu, Y Cai, B Zhang, KJ Chen
2016 IEEE International Electron Devices Meeting (IEDM), 10.4. 1-10.4. 4, 2016
1162016
A feasible strategy for identifying single-atom catalysts towards electrochemical NO-to-NH3 conversion
H Niu#, Z Zhang#, X Wang, X Wan, C Kuai*, Y Guo*
Small 17 (36), 2102396, 2021
932021
Low on-resistance normally-off GaN double-channel metal-oxide-semiconductor high-electron-mobility transistor
J Wei, S Liu, B Li, X Tang, Y Lu, C Liu, M Hua, Z Zhang, G Tang, KJ Chen
IEEE Electron Device Letters 36 (12), 1287-1290, 2015
912015
Tunable Properties of Novel Ga2O3 Monolayer for Electronics and Optoelectronics Applications
Y Liao#, Z Zhang#*, Z Gao, Q Qian, M Hua*
ACS Applied Materials & Interfaces 12 (27), 30659, 2020
902020
Normally-Off LPCVD-SiNx/GaN MIS-FET With Crystalline Oxidation Interlayer
M Hua, J Wei, G Tang, Z Zhang, Q Qian, X Cai, N Wang, KJ Chen
IEEE Electron Device Letters 38 (7), 929-932, 2017
822017
Machine-Learning-Accelerated Catalytic Activity Predictions of Transition Metal Phthalocyanine Dual-Metal-Sites Catalysts for CO2 Reduction
X Wan, Z Zhang*, H Niu, Y Yin, C Kuai, J Wang, C Shao, Y Guo*
The Journal of Physical Chemistry Letters 12, 6111–6118, 2021
802021
High-speed, high-reliability GaN power device with integrated gate driver
G Tang, MH Kwan, Z Zhang, J He, J Lei, RY Su, FW Yao, YM Lin, JL Yu, ...
2018 IEEE 30th International Symposium on Power Semiconductor Devices and …, 2018
802018
High uniformity normally-OFF GaN MIS-HEMTs fabricated on ultra-thin-barrier AlGaN/GaN heterostructure
S Huang, X Liu, X Wang, X Kang, J Zhang, Q Bao, K Wei, Y Zheng, ...
IEEE Electron Device Letters 37 (12), 1617-1620, 2016
782016
Performance and VTH Stability in E-Mode GaN Fully Recessed MIS-FETs and Partially Recessed MIS-HEMTs With LPCVD-SiNx/PECVD-SiNx Gate Dielectric …
J He, M Hua, Z Zhang, KJ Chen
IEEE Transactions on Electron Devices 65 (8), 3185-3191, 2018
672018
650-V Double-Channel Lateral Schottky Barrier Diode with Dual-Recess Gated Anode
J Lei, J Wei, G Tang, Z Zhang, Q Qian, Z Zheng, M Hua, KJ Chen
IEEE Electron Device Letters 39 (2), 260-263, 2017
672017
Improved Gate Dielectric Deposition and Enhanced Electrical Stability for Single-Layer MoS2 MOSFET with an AlN Interfacial Layer
Q Qian, B Li, M Hua, Z Zhang, F Lan, Y Xu, R Yan, KJ Chen
Scientific reports 6 (1), 27676, 2016
562016
Theoretical study on the photocatalytic properties of 2D InX(X = S, Se)/transition metal disulfide (MoS2 and WS2) van der Waals heterostructures
H Guo#, Z Zhang#, B Huang, X Wang, H Niu, Y Guo, B Li, R Zheng, H Wu
Nanoscale 12, 20025, 2020
522020
Transition Metal and N Doping on AlP Monolayers for Bifunctional Oxygen Electrocatalysts: Density Functional Theory Study Assisted by Machine Learning Description
X Liu, Y Zhang, W Wang*, Y Chen, W Xiao, T Liu, Z Zhong, Z Luo, Z Ding*, ...
ACS Applied Materials & Interfaces 14 (1), 1249–1259, 2022
512022
Ultra-low lattice thermal conductivity of monolayer penta-silicene and penta-germanene
Z Gao, Z Zhang, G Liu, JS Wang
Physical Chemistry Chemical Physics 21, 26033-26040, 2019
502019
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