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Wenjing Zhang (张文静)
Wenjing Zhang (张文静)
Prof. of ICL 2D MOST, SHENZHEN UNIVERSITY, CHINA
Подтвержден адрес электронной почты в домене szu.edu.cn - Главная страница
Название
Процитировано
Процитировано
Год
Synthesis of Large‐Area MoS2 Atomic Layers with Chemical Vapor Deposition
YH Lee, XQ Zhang, W Zhang, MT Chang, CT Lin, KD Chang, YC Yu, ...
Advanced Materials, 2012
38642012
Growth of Large-Area and Highly Crystalline MoS2 Thin Layers on Insulating Substrates
KK Liu, W Zhang, YH Lee, YC Lin, MT Chang, CY Su, CS Chang, H Li, ...
Nano Letters, 2012
22412012
Ultrahigh-Gain Photodetectors Based on Atomically Thin Graphene-MoS2 Heterostructures
W Zhang, CP Chuu, JK Huang, CH Chen, ML Tsai, YH Chang, CT Liang, ...
Scientific reports 4 (1), 3826, 2014
11652014
High‐gain phototransistors based on a CVD MoS2 monolayer
W Zhang, JK Huang, CH Chen, YH Chang, YJ Cheng, LJ Li
Advanced materials 25 (25), 3456-3461, 2013
10802013
Rational molecular passivation for high-performance perovskite light-emitting diodes
W Xu, Q Hu, S Bai, C Bao, Y Miao, Z Yuan, T Borzda, AJ Barker, ...
Nature Photonics 13 (6), 418-424, 2019
10432019
Wafer Scale MoS2 Thin Layers Prepared by MoO3 Sulfurization
YC Lin, W Zhang, JK Huang, KK Liu, YH Lee, CT Liang, CW Chu, LJ Li
Nanoscale, 2012
8392012
Highly efficient electrocatalytic hydrogen production by MoSx grown on graphene-protected 3D Ni foams
YH Chang, CT Lin, TY Chen, CL Hsu, YH Lee, W Zhang, KH Wei, LJ Li
Advanced materials 25 (5), 756-760, 2013
7572013
Monolayer MoSe2 Grown by Chemical Vapor Deposition for Fast Photodetection
YH Chang, W Zhang, Y Zhu, Y Han, J Pu, JK Chang, WT Hsu, JK Huang, ...
ACS nano 8 (8), 8582-8590, 2014
6292014
Electrical and spectroscopic characterizations of ultra-large reduced graphene oxide monolayers
CY Su, Y Xu, W Zhang, J Zhao, X Tang, CH Tsai, LJ Li
Chemistry of Materials 21 (23), 5674-5680, 2009
5752009
Bandgap tunability at single-layer molybdenum disulphide grain boundaries
YL Huang, Y Chen, W Zhang, SY Quek, CH Chen, LJ Li, WT Hsu, ...
Nature communications 6 (1), 6298, 2015
4622015
Role of Metal Contacts in High-Performance Phototransistors Based on WSe2 Monolayers
W Zhang, MH Chiu, CH Chen, W Chen, LJ Li, ATS Wee
ACS nano 8 (8), 8653-8661, 2014
4452014
High performance and stable all‐inorganic metal halide perovskite‐based photodetectors for optical communication applications
C Bao, J Yang, S Bai, W Xu, Z Yan, Q Xu, J Liu, W Zhang, F Gao
Advanced materials 30 (38), 1803422, 2018
4312018
Direct formation of wafer scale graphene thin layers on insulating substrates by chemical vapor deposition
CY Su, AY Lu, CY Wu, YT Li, KK Liu, W Zhang, SY Lin, ZY Juang, ...
Nano letters 11 (9), 3612-3616, 2011
3952011
Graphene/MoS2 heterostructures for ultrasensitive detection of DNA hybridisation
PTK Loan, W Zhang, CT Lin, KH Wei, LJ Li, CH Chen
Advanced materials 26 (28), 4838-+, 2014
3332014
Giant photoluminescence enhancement in tungsten-diselenide–gold plasmonic hybrid structures
Z Wang, Z Dong, Y Gu, YH Chang, L Zhang, LJ Li, W Zhao, G Eda, ...
Nature communications 7 (1), 11283, 2016
3152016
Ultrahigh-current-density niobium disulfide catalysts for hydrogen evolution
J Yang, AR Mohmad, Y Wang, R Fullon, X Song, F Zhao, I Bozkurt, ...
Nature materials 18 (12), 1309-1314, 2019
3062019
Nitrogen-doped graphene sheets grown by chemical vapor deposition: Synthesis and influence of nitrogen impurities on carrier transport
YF Lu, ST Lo, JC Lin, W Zhang, JY Lu, FH Liu, CM Tseng, YH Lee, ...
ACS nano 7 (8), 6522-6532, 2013
3062013
High‐Performance, Room Temperature, Ultra‐Broadband Photodetectors Based on Air‐Stable PdSe2
Q Liang, Q Wang, Q Zhang, J Wei, SX Lim, R Zhu, J Hu, W Wei, C Lee, ...
Advanced Materials 31 (24), 1807609, 2019
2992019
Highly efficient restoration of graphitic structure in graphene oxide using alcohol vapors
CY Su, Y Xu, W Zhang, J Zhao, A Liu, X Tang, CH Tsai, Y Huang, LJ Li
ACS nano 4 (9), 5285-5292, 2010
2952010
Opening an electrical band gap of bilayer graphene with molecular doping
W Zhang, CT Lin, KK Liu, T Tite, CY Su, CH Chang, YH Lee, CW Chu, ...
ACS nano 5 (9), 7517-7524, 2011
2832011
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