High-density ultrasmall epitaxial Ge islands on Si (111) surfaces with a SiO 2 coverage AA Shklyaev, M Shibata, M Ichikawa
Physical Review B 62 (3), 1540, 2000
225 2000 Leed studies of vicinal surfaces of silicon BZ Olshanetsky, AA Shklyaev
Surface Science 82 (2), 445-452, 1979
129 1979 Phase transitions on clean Si (110) surfaces BZ Olshanetsky, AA Shklyaev
Surface Science 67 (2), 581-588, 1977
125 1977 Extremely dense arrays of germanium and silicon nanostructures AA Shklyaev, M Ichikawa
Physics-Uspekhi 51 (2), 133, 2008
98 2008 LEED investigation of germanium surfaces cleaned by sublimation of sulphide films; structural transitions on clean Ge (110) surface BZ Olshanetsky, SM Repinsky, AA Shklyaev
Surface Science 64 (1), 224-236, 1977
95 1977 Effect of interfaces on quantum confinement in Ge dots grown on Si surfaces with a SiO2 coverage AA Shklyaev, M Ichikawa
Surface science 514 (1-3), 19-26, 2002
80 2002 Three-dimensional Si islands on Si (001) surfaces AA Shklyaev, M Ichikawa
Physical Review B 65 (4), 045307, 2001
70 2001 LEED studies of vicinal surfaces of germanium BZ Olshanetsky, SM Repinsky, AA Shklyaev
Surface Science 69 (1), 205-217, 1977
67 1977 Visible photoluminescence of Ge dots embedded in matrices AA Shklyaev, M Ichikawa
Applied physics letters 80 (8), 1432-1434, 2002
65 2002 Ge islands on Si (111) at coverages near the transition from two-dimensional to three-dimensional growth AA Shklyaev, M Shibata, M Ichikawa
Surface science 416 (1-2), 192-199, 1998
65 1998 Optical anisotropy of oxidized Si (001) surfaces and its oscillation in the layer-by-layer oxidation process T Yasuda, S Yamasaki, M Nishizawa, N Miyata, A Shklyaev, M Ichikawa, ...
Physical Review Letters 87 (3), 037403, 2001
60 2001 Local structure of Ge nanoislands on Si(111) surfaces with a coverage AV Kolobov, AA Shklyaev, H Oyanagi, P Fons, S Yamasaki, M Ichikawa
Applied Physics Letters 78 (17), 2563-2565, 2001
60 2001 Nanometer-scale germanium islands on Si (111) surface windows formed in an ultrathin silicon dioxide film AA Shklyaev, M Shibata, M Ichikawa
Applied physics letters 72 (3), 320-322, 1998
49 1998 Instability of two-dimensional layers in the Stranski-Krastanov growth mode of Ge on Si (111) AA Shklyaev, M Shibata, M Ichikawa
Physical Review B 58 (23), 15647, 1998
48 1998 Surface morphology of Ge layers epitaxially grown on bare and oxidized Si (001) and Si (111) substrates AA Shklyaev, KN Romanyuk, SS Kosolobov
Surface science 625, 50-56, 2014
37 2014 Branching of Critical Conditions for Si(111)-( ) Oxidation AA Shklyaev, T Suzuki
Physical review letters 75 (2), 272, 1995
35 1995 Photoluminescence of Si layers grown on oxidized Si surfaces AA Shklyaev, Y Nakamura, M Ichikawa
Journal of applied physics 101 (3), 2007
34 2007 Raman and photoluminescence spectroscopy of SiGe layer evolution on Si (100) induced by dewetting AA Shklyaev, VA Volodin, M Stoffel, H Rinnert, M Vergnat
Journal of Applied Physics 123 (1), 2018
33 2018 Properties of three-dimensional structures prepared by Ge dewetting from Si (111) at high temperatures A Shklyaev, L Bolotov, V Poborchii, T Tada
Journal of Applied Physics 117 (20), 2015
31 2015 Photoluminescence of Ge∕ Si structures grown on oxidized Si surfaces AA Shklyaev, S Nobuki, S Uchida, Y Nakamura, M Ichikawa
Applied Physics Letters 88 (12), 2006
30 2006