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Physical Review B 54 (4), 2532, 1996
273 1996 Dielectric function of nanocrystalline silicon with few nanometers (< 3 nm) grain size M Losurdo, MM Giangregorio, P Capezzuto, G Bruno, MF Cerqueira, ...
Applied physics letters 82 (18), 2993-2995, 2003
69 2003 Different Er centres in Si and their use for electroluminescent devices W Jantsch, S Lanzerstorfer, L Palmetshofer, M Stepikhova, H Preier
Journal of luminescence 80 (1-4), 9-17, 1998
63 1998 Photonic bound states in the continuum in Si structures with the self‐assembled Ge nanoislands SA Dyakov, MV Stepikhova, AA Bogdanov, AV Novikov, DV Yurasov, ...
Laser & Photonics Reviews 15 (7), 2000242, 2021
54 2021 Optical Er-doping of Si during sublimational molecular beam epitaxy BA Andreev, AY Andreev, H Ellmer, H Hutter, ZF Krasil'nik, VP Kuznetsov, ...
Journal of crystal growth 201, 534-537, 1999
45 1999 Light emission from Ge (Si)/SOI self-assembled nanoislands embedded in photonic crystal slabs of various periods with and without cavities MV Stepikhova, AV Novikov, AN Yablonskiy, MV Shaleev, DE Utkin, ...
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36 2019 1.5 μm infrared photoluminescence phenomena in Er-doped porous silicon M Stepikhova, L Palmetshofer, W Jantsch, HJ Von Bardeleben, ...
Applied physics letters 74 (4), 537-539, 1999
36 1999 Properties of optically active Si: Er and Si1− xGex layers grown by the sublimation MBE method:[Thin Solid Films 369 (2000) 320–323] MV Stepikhova, BA Andreev, VB Shmagin, ZF Krasil'Nik, VP Kuznetsov, ...
Thin Solid Films 381 (1), 164-169, 2001
33 2001 Erbium doped silicon single-and multilayer structures for light-emitting device and laser applications ZF Krasilnik, BA Andreev, DI Kryzhkov, LV Krasilnikova, VP Kuznetsov, ...
Journal of materials research 21 (3), 574-583, 2006
28 2006 Realization of photo-and electroluminescent Si: Er structures by the method of sublimation molecular beam epitaxy B Andreev, V Chalkov, O Gusev, A Emel'yanov, Z Krasil'nik, V Kuznetsov, ...
Nanotechnology 13 (1), 97, 2002
27 2002 Si/SiGe: Er/Si structures for laser realization: Theoretical analysis and luminescent studies MV Stepikhova, LV Krasil’nikova, ZF Krasil’nik, VG Shengurov, ...
Journal of crystal growth 288 (1), 65-69, 2006
24 2006 Excitation of ions in silicon dioxide films thermally grown on silicon A Kozanecki, M Stepikhova, S Lanzerstorfer, W Jantsch, L Palmetshofer, ...
Applied physics letters 73 (20), 2929-2931, 1998
24 1998 A. Kozanecki, RJ Wilson and BJ Sealy H Przybylinska, W Jantsch, Y Suprun-Belevitch, M Stepikhova, ...
Phys. Rev. B 54, 2532, 1996
21 1996 Optical properties of erbium-doped xerogels embedded in porous anodic alumina NV Gaponenko, GK Malyarevich, DA Tsyrkunou, EA Stepanova, ...
Optical Materials 28 (6-7), 688-692, 2006
20 2006 Characteristics of photoluminescence in SiO2 with Si nanoinclusions produced by ion implantation DI Tetelbaum, IA Karpovich, MV Stepikhova, VG Shengurov, KA Markov, ...
Surface Investigation X-Ray, Synchrotron and Neutron Techniques 14 (5), 601-604, 1998
20 1998 On the origin of 1.5 μm luminescence in porous silicon coated with sol–gel derived erbium-doped Fe2O3 films NV Gaponenko, AV Mudryi, OV Sergeev, M Stepikhova, L Palmetshofer, ...
Journal of luminescence 80 (1-4), 399-403, 1998
19 1998 Donor activity of ion-implanted erbium in silicon L Palmetshofer, Y Suprun-Belevich, M Stepikhova
Nuclear Instruments and Methods in Physics Research Section B: Beam …, 1997
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15 1998 One-stage formation of two-dimensional photonic crystal and spatially ordered arrays of self-assembled ge (Si) nanoislandson pit-patterned silicon-on-insulator substrate AV Novikov, ZV Smagina, MV Stepikhova, VA Zinovyev, SA Rudin, ...
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14 2021