Kazumasa Hiramatsu
Kazumasa Hiramatsu
Mie University, Emeritus Professore
Подтвержден адрес электронной почты в домене elec.mie-u.ac.jp
Название
Процитировано
Процитировано
Год
P-type conduction in Mg-doped GaN treated with low-energy electron beam irradiation (LEEBI)
H Amano, M Kito, K Hiramatsu, I Akasaki
Japanese Journal of Applied Physics 28 (12A), L2112, 1989
26381989
Effects of ain buffer layer on crystallographic structure and on electrical and optical properties of GaN and Ga1− xAlxN (0< x≦ 0.4) films grown on sapphire substrate by MOVPE
I Akasaki, H Amano, Y Koide, K Hiramatsu, N Sawaki
Journal of crystal growth 98 (1-2), 209-219, 1989
10641989
Fabrication and characterization of low defect density GaN using facet-controlled epitaxial lateral overgrowth (FACELO)
K Hiramatsu, K Nishiyama, M Onishi, H Mizutani, M Narukawa, ...
Journal of Crystal Growth 221 (1-4), 316-326, 2000
5002000
Photoluminescence of Mg-doped p-type GaN and electroluminescence of GaN pn junction LED
I Akasaki, H Amano, M Kito, K Hiramatsu
Journal of luminescence 48, 666-670, 1991
4311991
Selective growth of wurtzite GaN and AlxGa1− xN on GaN/sapphire substrates by metalorganic vapor phase epitaxy
Y Kato, S Kitamura, K Hiramatsu, N Sawaki
Journal of crystal growth 144 (3-4), 133-140, 1994
4281994
Growth mechanism of GaN grown on sapphire with A1N buffer layer by MOVPE
K Hiramatsu, S Itoh, H Amano, I Akasaki, N Kuwano, T Shiraishi, K Oki
Journal of Crystal Growth 115 (1-4), 628-633, 1991
4191991
Schottky barrier on n‐type GaN grown by hydride vapor phase epitaxy
P Hacke, T Detchprohm, K Hiramatsu, N Sawaki
Applied physics letters 63 (19), 2676-2678, 1993
3601993
Effects of the buffer layer in metalorganic vapour phase epitaxy of GaN on sapphire substrate
H Amano, I Akasaki, K Hiramatsu, N Koide, N Sawaki
Thin Solid Films 163, 415-420, 1988
3591988
The growth of single crystalline GaN on a Si substrate using AIN as an intermediate layer
A Watanabe, T Takeuchi, K Hirosawa, H Amano, K Hiramatsu, I Akasaki
Journal of crystal growth 128 (1-4), 391-396, 1993
3521993
Recent progress in selective area growth and epitaxial lateral overgrowth of III‐nitrides: effects of reactor pressure in MOVPE growth
K Hiramatsu, K Nishiyama, A Motogaito, H Miyake, Y Iyechika, T Maeda
physica status solidi (a) 176 (1), 535-543, 1999
3471999
Relaxation process of the thermal strain in the GaN/α-Al2O3 heterostructure and determination of the intrinsic lattice constants of GaN free from the strain
T Detchprohm, K Hiramatsu, K Itoh, I Akasaki
Japanese journal of applied physics 31 (10B), L1454, 1992
3421992
Hydride vapor phase epitaxial growth of a high quality GaN film using a ZnO buffer layer
T Detchprohm, K Hiramatsu, H Amano, I Akasaki
Applied physics letters 61 (22), 2688-2690, 1992
3211992
Analysis of deep levels in n‐type GaN by transient capacitance methods
P Hacke, T Detchprohm, K Hiramatsu, N Sawaki, K Tadatomo, K Miyake
Journal of applied physics 76 (1), 304-309, 1994
3161994
Growth and Luminescence Properties of Mg‐Doped GaN Prepared by MOVPE
H Amano, M Kitoh, K Hiramatsu, I Akasaki
Journal of the Electrochemical Society 137 (5), 1639, 1990
2721990
Relaxation mechanism of thermal stresses in the heterostructure of GaN grown on sapphire by vapor phase epitaxy
K Hiramatsu, T Detchprohm, I Akasaki
Japanese journal of applied physics 32 (4R), 1528, 1993
2631993
Process of vapor growth of gallium nitride and its apparatus
K Manabe, N Okazaki, I Akazaki, K Hiramatsu, H Amano
US Patent 4,911,102, 1990
2531990
Growth of single crystalline GaN film on Si substrate using 3C-SiC as an intermediate layer
T Takeuchi, H Amano, K Hiramatsu, N Sawaki, I Akasaki
Journal of crystal growth 115 (1-4), 634-638, 1991
2451991
Growth of single crystal GaN substrate using hydride vapor phase epitaxy
K Naniwae, S Itoh, H Amano, K Itoh, K Hiramatsu, I Akasaki
Journal of crystal growth 99 (1-4), 381-384, 1990
2371990
Fabrication of GaN hexagonal pyramids on dot-patterned GaN/sapphire substrates via selective metalorganic vapor phase epitaxy
S Kitamura, K Hiramatsu, N Sawaki
Japanese journal of applied physics 34 (9B), L1184, 1995
2211995
Heteroepitaxial Growth and the Effect of Strain on the Luminescent Properties of GaN Films on (11 2̄0) and (0001) Sapphire Substrates
H Amano, K Hiramatsu, I Akasaki
Japanese journal of applied physics 27 (8A), L1384, 1988
2141988
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