Подписаться
Eric DeCuir Jr
Eric DeCuir Jr
Подтвержден адрес электронной почты в домене mail.mil
Название
Процитировано
Процитировано
Год
Intersublevel infrared photodetector with strain-free GaAs quantum dot pairs grown by high-temperature droplet epitaxy
J Wu, D Shao, VG Dorogan, AZ Li, S Li, EA DeCuir Jr, MO Manasreh, ...
Nano letters 10 (4), 1512-1516, 2010
1292010
Substrate effects on the strain relaxation in GaN/AlN short-period superlattices
V Kladko, A Kuchuk, P Lytvyn, O Yefanov, N Safriuk, A Belyaev, YI Mazur, ...
Nanoscale research letters 7, 1-9, 2012
442012
Correlation between surface and buried InAs quantum dots
BL Liang, ZM Wang, YI Mazur, GJ Salamo, EA DeCuir, MO Manasreh
Applied physics letters 89 (4), 2006
412006
Near-infrared intersubband absorption in nonpolar cubic GaN∕ AlN superlattices
EA DeCuir, E Fred, MO Manasreh, J Schörmann, DJ As, K Lischka
Applied Physics Letters 91 (4), 2007
382007
Cubic GaN∕ AlN multiple quantum well photodetector
EA DeCuir, MO Manasreh, E Tschumak, J Schörmann, DJ As, K Lischka
Applied physics letters 92 (20), 2008
342008
Junction optimization in HgCdTe: Shockley-Read-Hall generation-recombination suppression
J Schuster, RE DeWames, EA DeCuir, E Bellotti, PS Wijewarnasuriya
Applied Physics Letters 107 (2), 2015
272015
Resonant detectors and focal plane arrays for infrared detection
KK Choi, SC Allen, JG Sun, EA DeCuir
Infrared Physics & Technology 84, 94-101, 2017
242017
Rapid long-wave infrared laser-induced breakdown spectroscopy measurements using a mercury-cadmium-telluride linear array detection system
CSC Yang, E Brown, E Kumi-Barimah, U Hommerich, F Jin, Y Jia, ...
Applied optics 54 (33), 9695-9702, 2015
222015
Development and fabrication of extended short wavelength infrared HgCdTe sensors grown on CdTe/Si substrates by molecular beam epitaxy
S Simingalam, BL VanMil, Y Chen, EA DeCuir Jr, GP Meissner, ...
Solid-state electronics 101, 90-94, 2014
222014
Long-wave type-II superlattice detectors with unipolar electron and hole barriers
EA DeCuir Jr, GP Meissner, PS Wijewarnasuriya, N Gautam, S Krishna, ...
Optical Engineering 51 (12), 124001-124001, 2012
222012
Mechanism of strain-influenced quantum well thickness reduction in GaN/AlN short-period superlattices
AV Kuchuk, VP Kladko, TL Petrenko, VP Bryksa, AE Belyaev, YI Mazur, ...
Nanotechnology 25 (24), 245602, 2014
212014
Tuning In0. 3Ga0. 7As∕ GaAs multiple quantum dots for long-wavelength infrared detectors
YC Chua, EA Decuir, BS Passmore, KH Sharif, MO Manasreh, ZM Wang, ...
Applied physics letters 85 (6), 1003-1005, 2004
212004
Electromagnetic modeling and resonant detectors and arrays
KK Choi, J Sun, EA DeCuir, KA Olver, P Wijewarnasuriya
Infrared Physics & Technology 70, 153-161, 2015
202015
Near-infrared wavelength intersubband transitions in GaN∕ AlN short period superlattices
EA DeCuir, E Fred, BS Passmore, A Muddasani, MO Manasreh, J Xie, ...
Applied physics letters 89 (15), 2006
202006
Biomimetic nanostructures in ZnS and ZnSe provide broadband anti-reflectivity
L Chan, EA DeCuir, R Fu, DE Morse, MJ Gordon
Journal of Optics 19 (11), 114007, 2017
192017
Fabrication and optical behavior of graded-index, moth-eye antireflective structures in CdTe
L Chan, A Ghoshal, EA DeCuir, YP Chen, DE Morse, MJ Gordon
Journal of Vacuum Science & Technology B 35 (1), 2017
192017
Influence of template type and buffer strain on structural properties of GaN multilayer quantum wells grown by PAMBE, an x-ray study
VP Kladko, AV Kuchuk, NV Safryuk, VF Machulin, PM Lytvyn, ...
Journal of Physics D: Applied Physics 44 (2), 025403, 2010
162010
High-performance bias-selectable dual-band short-/mid-wavelength infrared photodetectors and focal plane arrays based on InAs/GaSb/AlSb Type-II superlattices
M Razeghi, AM Hoang, A Haddadi, G Chen, S Ramezani-Darvish, ...
Infrared Technology and Applications XXXIX 8704, 559-563, 2013
142013
Addressing surface leakage in type-II InAs/GaSb superlattice materials using novel approaches to surface passivation
EA DeCuir Jr, JW Little, N Baril
Infrared Sensors, Devices, and Applications; and Single Photon Imaging II …, 2011
132011
Enhanced photoluminescence from InAs/GaAs surface quantum dots by using a Si-doped interlayer
BL Liang, YI Mazur, VP Kunets, ZM Wang, GJ Salamo, EA DeCuir, ...
Nanotechnology 19 (6), 065705, 2008
132008
В данный момент система не может выполнить эту операцию. Повторите попытку позднее.
Статьи 1–20