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Murtadha Alher
Murtadha Alher
Подтвержден адрес электронной почты в домене uokerbala.edu.iq
Название
Процитировано
Процитировано
Год
Systematic study of GeSn heterostructure-based light-emitting diodes towards mid-infrared applications
Y Zhou, W Dou, W Du, T Pham, SA Ghetmiri, S Al-Kabi, A Mosleh, M Alher, ...
Journal of Applied Physics 120 (2), 2016
882016
Optical Characterization of Si-Based Ge1−x Sn x Alloys with Sn Compositions up to 12%
S Al-Kabi, SA Ghetmiri, J Margetis, W Du, A Mosleh, M Alher, W Dou, ...
Journal of Electronic Materials 45, 2133-2141, 2016
402016
Direct Growth of Ge1−xSnx Films on Si Using a Cold-Wall Ultra-High Vacuum Chemical-Vapor-Deposition System
A Mosleh, MA Alher, LC Cousar, W Du, SA Ghetmiri, T Pham, JM Grant, ...
Frontiers in Materials 2, 30, 2015
322015
Investigation on the formation and propagation of defects in GeSn thin films
A Mosleh, M Benamara, SA Ghetmiri, BR Conley, MA Alher, W Du, G Sun, ...
ECS Transactions 64 (6), 895, 2014
252014
SiyGe1− x− ySnx films grown on Si using a cold-wall ultrahigh-vacuum chemical vapor deposition system
A Mosleh, M Alher, W Du, LC Cousar, SA Ghetmiri, S Al-Kabi, W Dou, ...
Journal of Vacuum Science & Technology B 34 (1), 2016
192016
Buffer-Free GeSn and SiGeSn Growth on Si Substrate Using In Situ SnD4 Gas Mixing
A Mosleh, M Alher, LC Cousar, W Du, SA Ghetmiri, S Al-Kabi, W Dou, ...
Journal of Electronic Materials 45, 2051-2058, 2016
182016
Broadband high efficiency silicon nanowire arrays with radial diversity within diamond-like geometrical distribution for photovoltaic applications
OHAL Zoubi, TM Said, MA Alher, SEL Ghazaly, H Naseem
Optics Express 23 (15), A767-A778, 2015
162015
GePb alloy growth using layer inversion method
H Alahmad, A Mosleh, M Alher, SF Banihashemian, SA Ghetmiri, ...
Journal of Electronic Materials 47, 3733-3740, 2018
142018
Enhancement of material quality of (Si) GeSn films grown by SnCl4 precursor
A Mosleh, MA Alher, L Cousar, H Abusafe, W Dou, P Grant, S Al-Kabi, ...
ECS Transactions 69 (5), 279, 2015
132015
Growth of Pseudomorphic GeSn at Low Pressure with Sn Composition of 16.7%
J Grant, G Abernathy, O Olorunsola, S Ojo, S Amoah, E Wanglia, SK Saha, ...
Materials 14 (24), 7637, 2021
82021
CMOS compatible growth of high quality Ge, SiGe and SiGeSn for photonic device applications
MA Alher, A Mosleh, L Cousar, W Dou, P Grant, SA Ghetmiri, S Al-Kabi, ...
ECS Transactions 69 (5), 269, 2015
82015
Study of the Effects of Welding Process on the Microstructure of Worn Carbon Steel Shaft
BSSMA Basim Raheem Sadeq
Conf. Series: Materials Science and Engineering 671 (1), doi:10.1088/1757 …, 2020
6*2020
Human Gait Cycle Classification Improvements Using Median and Root Mean Square Filters Based on EMG Signals
MF Ghalyan, MA Alher, MJ Jweeg
IOP Conference Series: Materials Science and Engineering 1067 (1), 012146, 2021
42021
Design and Analysis of a Novel Artificial Ankle-Foot Joint Mechanism
SA Kokz, MA Alher, HSS Ajibori, JJ Muhsin
IOP Conference Series: Materials Science and Engineering 1067 (1), 012140, 2021
42021
Investigation of silicon nanowires produced by metal-assisted chemical etching method
MA Alher, A Mosleh, SF Banihashemian
IOP Conference Series: Materials Science and Engineering 671 (1), 012028, 2020
22020
HETEROEPITAXIAL GROWTH OF Ge-Sn ALLOYS
A Mosleh, SQ Yu, HA Naseem, M ALHER, LC COUSAR
US Patent App. 14/984,478, 2016
12016
Low Pressure Growth of Pseudomorphic Gesn with 16.7% Sn Incorporation
JM Grant, G Abernathy, O Olorunsola, S Ojo, S Amoha, E Wanglia, ...
Electrochemical Society Meeting Abstracts 242, 1163-1163, 2022
2022
A Novel Mathematical Model of a Powered Ankle-Foot Prosthesis
MJ Jweeg, MA Alher, MF Ghalyan
Design Engineering, 13572-13591, 2021
2021
Ternary CySi1-x-ySnx Alloys for Low-Cost High-Efficiency Multi-Junction Solar Cells
SF Banihashemian, M Alher, A Mosleh, HA Naseem
2021 IEEE 48th Photovoltaic Specialists Conference (PVSC), 1750-1753, 2021
2021
Growth of Pseudomorphic GeSn at Low Pressure with Sn Composition of 16.7%. Materials 2021, 14, 7637
J Grant, G Abernathy, O Olorunsola, S Ojo, S Amoah, E Wanglia, SK Saha, ...
s Note: MDPI stays neutral with regard to jurisdictional claims in published …, 2021
2021
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