Petro Deminskyi
Petro Deminskyi
ASM Microchemistry Oy, Finland
Подтвержден адрес электронной почты в домене asm.com
Название
Процитировано
Процитировано
Год
Area-selective atomic layer deposition using an inductively coupled plasma polymerized fluorocarbon layer: a case study for metal oxides
A Haider, P Deminskyi, TM Khan, H Eren, N Biyikli
The Journal of Physical Chemistry C 120 (46), 26393-26401, 2016
292016
Nanoscale selective area atomic layer deposition of TiO2 using e-beam patterned polymers
HENB Ali Haider, Mehmet Yilmaz, Petro Deminskyi
RSC Adv. 6, 106109-106119, 2016
272016
Atomic layer deposition of InN using trimethylindium and ammonia plasma
P Deminskyi, P Rouf, IG Ivanov, H Pedersen
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films 37 (2 …, 2019
152019
NLL-assisted multilayer graphene patterning
E Kovalska, I Pavlov, P Deminskyi, A Baldycheva, FO Ilday, C Kocabas
ACS omega 3 (2), 1546-1554, 2018
132018
Self-aligned nanoscale processing solutions via selective atomic layer deposition of oxide, nitride, and metallic films
N Biyikli, A Haider, P Deminskyi, M Yilmaz
Low-Dimensional Materials and Devices 2017 10349, 103490M, 2017
122017
Long-range ordered vertical III-nitride nano-cylinder arrays via plasma-assisted atomic layer deposition
A Haider, P Deminskyi, M Yilmaz, K Elmabruk, I Yilmaz, N Biyikli
Journal of Materials Chemistry C 6 (24), 6471-6482, 2018
72018
Photoluminescence spectrums of GaN/InGaN MQDs on GaN nanoroads
OL P. Deminskyi, V. Osinsky, N. Lyahova, V. Hlotov, N. Sukhovyy
Uchionnye zapiski fizicheskogo fakulteta MGU, 142304, 2014
4*2014
Graphene as plasma-compatible blocking layer material for area-selective atomic layer deposition: A feasibility study for III-nitrides
P Deminskyi, A Haider, E Kovalska, N Biyikli
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films 36 (1 …, 2018
32018
Investigation of native oxide removing from HCPA ALD grown GaN thin films surface utilizing HF solutions
P Deminskyi, A Haider, N Biyikli, A Ovsianitsky, A Tsymbalenko, D Kotov, ...
2016 IEEE 36th International Conference on Electronics and Nanotechnology …, 2016
22016
Carbides of A³B⁵ compounds–new class materials for opto-and microelectronics
VI Osinsky, IV Masol, NN Lyahova, PV Deminsky
Semiconductor Physics Quantum Electronics & Optoelectronics, 2012
22012
Температурные и концентрационные свойства
ВИ Осинский, ПВ Деминский, НН Ляхова, АП Моторный, ИВ Масол, ...
Оптико-електронні інформаційно-енергетичні технології, 50-57, 2012
22012
Atomic layer deposition of AlN using trimethylaluminium and ammonia
M Beshkova, P Deminskyi, H Pedersen, R Yakimova
Journal of Physics: Conference Series 1492 (1), 012046, 2020
12020
Effect of substrate temperature and Ga source precursor on growth and material properties of GaN grown by hollow cathode plasma assisted atomic layer deposition
A Haider, S Kizir, P Deminskyi, O Tsymbalenko, SA Leghari, N Biyikli, ...
2016 IEEE 36th International Conference on Electronics and Nanotechnology …, 2016
12016
The dependence of Si/AIIIBV light source photoluminescence efficiency on dynamic displacements of atoms in the crystal lattice
V Osinsky, P Deminskyi, N Lyahova, N Syhoviy, H Honarmand
2014 IEEE 34th International Scientific Conference on Electronics and …, 2014
12014
Управление свойствами сложных III-оксидных нанокристаллических элементов в технологии оптоэлектронных приборов на нитридах галлия, индия и алюминия
ВИ Осинский, ОД Дяченко, ПВ Деминский
ВНТУ, 2010
12010
On the dynamics in chemical vapor deposition of InN
CW Hsu, P Deminskyi, A Persson, M Karlsson, H Pedersen
Journal of Applied Physics 130 (13), 135302, 2021
2021
Atomic Layer Deposition of AlN on Graphene
M Beshkova, P Deminskyi, CW Hsu, I Shtepliuk, I Avramova, R Yakimova, ...
physica status solidi (a) 218 (17), 2000684, 2021
2021
Resolving impurities in atomic layer deposited aluminum nitride through low cost, high efficiency precursor design
SC Buttera, P Rouf, P Deminskyi, NJ O’Brien, H Pedersen, ST Barry
Inorganic Chemistry 60 (15), 11025-11031, 2021
2021
Area-selective atomic layer deposition of noble metals: Polymerized fluorocarbon layers as effective growth inhibitors
P Deminskyi, A Haider, H Eren, TM Khan, N Biyikli
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films 39 (2 …, 2021
2021
Surface ligand removal in atomic layer deposition of GaN using triethylgallium
P Deminskyi, CW Hsu, B Bakhit, P Rouf, H Pedersen
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films 39 (1 …, 2021
2021
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