Подписаться
Petro Deminskyi
Petro Deminskyi
ASM Microchemistry Oy, Finland
Подтвержден адрес электронной почты в домене asm.com
Название
Процитировано
Процитировано
Год
Area-selective atomic layer deposition using an inductively coupled plasma polymerized fluorocarbon layer: a case study for metal oxides
A Haider, P Deminskyi, TM Khan, H Eren, N Biyikli
The Journal of Physical Chemistry C 120 (46), 26393-26401, 2016
412016
Atomic layer deposition of InN using trimethylindium and ammonia plasma
P Deminskyi, P Rouf, IG Ivanov, H Pedersen
Journal of Vacuum Science & Technology A 37 (2), 2019
402019
Nanoscale selective area atomic layer deposition of TiO2 using e-beam patterned polymers
HENB Ali Haider, Mehmet Yilmaz, Petro Deminskyi
RSC Adv. 6, 106109-106119, 2016
392016
NLL-assisted multilayer graphene patterning
E Kovalska, I Pavlov, P Deminskyi, A Baldycheva, FO Ilday, C Kocabas
ACS omega 3 (2), 1546-1554, 2018
172018
Self-aligned nanoscale processing solutions via selective atomic layer deposition of oxide, nitride, and metallic films
N Biyikli, A Haider, P Deminskyi, M Yilmaz
Low-Dimensional Materials and Devices 2017 10349, 30-49, 2017
172017
Direct epitaxial nanometer-thin InN of high structural quality on 4H–SiC by atomic layer deposition
CW Hsu, P Deminskyi, I Martinovic, IG Ivanov, J Palisaitis, H Pedersen
Applied Physics Letters 117 (9), 2020
132020
Long-range ordered vertical III-nitride nano-cylinder arrays via plasma-assisted atomic layer deposition
A Haider, P Deminskyi, M Yilmaz, K Elmabruk, I Yilmaz, N Biyikli
Journal of Materials Chemistry C 6 (24), 6471-6482, 2018
112018
On the dynamics in chemical vapor deposition of InN
CW Hsu, P Deminskyi, A Persson, M Karlsson, H Pedersen
Journal of Applied Physics 130 (13), 2021
82021
Surface ligand removal in atomic layer deposition of GaN using triethylgallium
P Deminskyi, CW Hsu, B Bakhit, P Rouf, H Pedersen
Journal of Vacuum Science & Technology A 39 (1), 2021
72021
Resolving impurities in atomic layer deposited aluminum nitride through low cost, high efficiency precursor design
SC Buttera, P Rouf, P Deminskyi, NJ O’Brien, H Pedersen, ST Barry
Inorganic Chemistry 60 (15), 11025-11031, 2021
62021
Area-selective atomic layer deposition of noble metals: Polymerized fluorocarbon layers as effective growth inhibitors
P Deminskyi, A Haider, H Eren, TM Khan, N Biyikli
Journal of Vacuum Science & Technology A 39 (2), 2021
42021
Graphene as plasma-compatible blocking layer material for area-selective atomic layer deposition: A feasibility study for III-nitrides
P Deminskyi, A Haider, E Kovalska, N Biyikli
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films 36 (1 …, 2018
42018
Photoluminescence spectrums of GaN/InGaN MQDs on GaN nanoroads
OL P. Deminskyi, V. Osinsky, N. Lyahova, V. Hlotov, N. Sukhovyy
Uchionnye zapiski fizicheskogo fakulteta MGU, 142304, 2014
4*2014
Laser writing of nanostructures deep inside Gallium Arsenide (GaAs)
O Tokel, A Turnali, P Deminskyi, S Ilday, FÖ Ilday
Conference on Lasers and Electro-Optics/Pacific Rim, W1E. 2, 2018
32018
Investigation of native oxide removing from HCPA ALD grown GaN thin films surface utilizing HF solutions
P Deminskyi, A Haider, N Biyikli, A Ovsianitsky, A Tsymbalenko, D Kotov, ...
2016 IEEE 36th International Conference on Electronics and Nanotechnology …, 2016
32016
Molybdenum nitride as a scalable and thermally stable pWFM for CFET
H Arimura, S Brus, J Franco, Y Oniki, A Vandooren, T Conard, BT Chan, ...
2023 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and …, 2023
22023
Atomic layer deposition of AlN on different SiC surfaces
M Beshkova, P Deminskyi, CW Hsu, I Shtepliuk, I Avramova, R Yakimova, ...
Journal of Physics: Conference Series 2240 (1), 012004, 2022
22022
Low-Dimensional Materials and Devices 2017
N Biyikli, A Haider, P Deminskyi, M Yilmaz, NP Kobayashi, AA Talin, ...
International Society for Optics and Photonics, 103490M, 2017
22017
Effect of substrate temperature and Ga source precursor on growth and material properties of GaN grown by hollow cathode plasma assisted atomic layer deposition
A Haider, S Kizir, P Deminskyi, O Tsymbalenko, SA Leghari, N Biyikli, ...
2016 IEEE 36th International Conference on Electronics and Nanotechnology …, 2016
22016
Carbides of A³B⁵ compounds–new class materials for opto-and microelectronics
VI Osinsky, IV Masol, NN Lyahova, PV Deminsky
Semiconductor Physics Quantum Electronics & Optoelectronics, 2012
22012
В данный момент система не может выполнить эту операцию. Повторите попытку позднее.
Статьи 1–20