Two-dimensional semiconductor HfSe2 and MoSe2/HfSe2 van der Waals heterostructures by molecular beam epitaxy KE Aretouli, P Tsipas, D Tsoutsou, J Marquez-Velasco, ... Applied Physics Letters 106 (14), 143105, 2015 | 84 | 2015 |
Epitaxial 2D SnSe2/ 2D WSe2 van der Waals Heterostructures KE Aretouli, D Tsoutsou, P Tsipas, J Marquez-Velasco, ... ACS applied materials & interfaces 8 (35), 23222-23229, 2016 | 78 | 2016 |
Epitaxial 2D MoSe2 (HfSe2) Semiconductor/2D TaSe2 Metal van der Waals Heterostructures D Tsoutsou, KE Aretouli, P Tsipas, J Marquez-Velasco, ... ACS applied materials & interfaces 8 (3), 1836-1841, 2016 | 45 | 2016 |
Mechanical behaviors, lattice thermal conductivity and vibrational properties of a new MAX phase Lu2SnC MA Hadi, N Kelaidis, SH Naqib, A Chroneos, A Islam Journal of Physics and Chemistry of Solids 129, 162-171, 2019 | 32 | 2019 |
Defects and lithium migration in Li 2 CuO 2 A Kordatos, N Kuganathan, N Kelaidis, P Iyngaran, A Chroneos Scientific reports 8 (1), 1-7, 2018 | 32 | 2018 |
Intrinsic defect processes and elastic properties of Ti3AC2 (A = Al, Si, Ga, Ge, In, Sn) MAX phases SRG Christopoulos, PP Filippatos, MA Hadi, N Kelaidis, ME Fitzpatrick, ... Journal of Applied Physics 123 (2), 025103, 2018 | 23 | 2018 |
Hydrogen and nitrogen codoping of anatase TiO 2 for efficiency enhancement in organic solar cells M Vasilopoulou, N Kelaidis, E Polydorou, A Soultati, D Davazoglou, ... Scientific reports 7 (1), 1-11, 2017 | 21 | 2017 |
Defects, lithium mobility and tetravalent dopants in the Li 3 NbO 4 cathode material N Kuganathan, A Kordatos, N Kelaidis, A Chroneos Scientific reports 9 (1), 1-8, 2019 | 16 | 2019 |
Phase stability and physical properties of (Zr1-xNbx) 2AlC MAX phases MA Hadi, U Monira, A Chroneos, SH Naqib, A Islam, N Kelaidis, RV Vovk Journal of Physics and Chemistry of Solids 132, 38-47, 2019 | 15 | 2019 |
A roadmap of strain in doped anatase TiO 2 N Kelaidis, A Kordatos, SRG Christopoulos, A Chroneos Scientific reports 8 (1), 1-8, 2018 | 14 | 2018 |
AB stacked few layer graphene growth by chemical vapor deposition on single crystal Rh (1 1 1) and electronic structure characterization A Kordatos, N Kelaidis, SA Giamini, J Marquez-Velasco, ... Applied Surface Science 369, 251-256, 2016 | 11 | 2016 |
312 MAX Phases: Elastic properties and lithiation PP Filippatos, MA Hadi, SRG Christopoulos, A Kordatos, N Kelaidis, ... Materials 12 (24), 4098, 2019 | 10 | 2019 |
Electronic structures, bonding natures and defect processes in Sn-based 211 MAX phases MA Hadi, N Kelaidis, SH Naqib, A Chroneos, A Islam Computational Materials Science 168, 203-212, 2019 | 8 | 2019 |
Surface-enhanced Raman spectroscopy of graphene integrated in plasmonic silicon platforms with three-dimensional nanotopography M Kanidi, A Dagkli, N Kelaidis, D Palles, S Aminalragia-Giamini, ... The Journal of Physical Chemistry C 123 (5), 3076-3087, 2019 | 8 | 2019 |
Migration of sodium and lithium interstitials in anatase TiO2 A Kordatos, N Kelaidis, A Chroneos Solid State Ionics 315, 40-43, 2018 | 8 | 2018 |
Electronic band structure imaging of three layer twisted graphene on single crystal Cu (111) J Marquez Velasco, N Kelaidis, E Xenogiannopoulou, YS Raptis, ... Applied Physics Letters 103 (21), 213108, 2013 | 8 | 2013 |
Simulation of the electrical characteristics of MOS capacitors on strained‐silicon substrates N Kelaidis, D Skarlatos, C Tsamis physica status solidi c 5 (12), 3647-3650, 2008 | 8 | 2008 |
Experimental investigation of metallic thin film modification of nickel substrates for chemical vapor deposition growth of single layer graphene at low temperature SA Giamini, J Marquez-Velasco, I Sakellis, P Tsipas, N Kelaidis, ... Applied Surface Science 385, 554-561, 2016 | 7 | 2016 |
Defect processes in F and Cl doped anatase TiO 2 PP Filippatos, N Kelaidis, M Vasilopoulou, D Davazoglou, NN Lathiotakis, ... Scientific reports 9 (1), 1-10, 2019 | 6 | 2019 |
Defect processes in Li 2 ZrO 3: insights from atomistic modelling A Kordatos, SRG Christopoulos, N Kelaidis, A Chroneos Journal of Materials Science: Materials in Electronics 28 (16), 11789-11793, 2017 | 6 | 2017 |