| Molecular-beam epitaxy and characteristics of Ga N y As 1-x-y Bi x W Huang, K Oe, G Feng, M Yoshimoto Journal of applied physics 98 (5), 053505-053505-6, 2005 | 145 | 2005 |
| Characterization of stacking faults in 4H-SiC epilayers by room-temperature microphotoluminescence mapping G Feng, J Suda, T Kimoto Applied Physics Letters 92 (22), 2008 | 129 | 2008 |
| The influence of temperature on mode I fracture toughness and fracture characteristics of sandstone G Feng, Y Kang, T Meng, Y Hu, X Li Rock Mechanics and Rock Engineering 50, 2007-2019, 2017 | 126 | 2017 |
| Space-modulated junction termination extension for ultrahigh-voltage pin diodes in 4H-SiC G Feng, J Suda, T Kimoto IEEE transactions on electron devices 59 (2), 414-418, 2011 | 113 | 2011 |
| Triple Shockley type stacking faults in 4H-SiC epilayers G Feng, J Suda, T Kimoto Applied Physics Letters 94 (9), 091910-091910-3, 2009 | 81 | 2009 |
| Temperature dependence of Bi behavior in MBE growth of InGaAs/InP G Feng, K Oe, M Yoshimoto Journal of crystal growth 301, 121-124, 2007 | 69 | 2007 |
| Characterization of major in-grown stacking faults in 4H-SiC epilayers G Feng, J Suda, T Kimoto Physica B: Condensed Matter 404 (23-24), 4745-4748, 2009 | 65 | 2009 |
| New III–V semiconductor InGaAsBi alloy grown by molecular beam epitaxy G Feng, M Yoshimoto, K Oe, A Chayahara, Y Horino Japanese journal of applied physics 44 (9L), L1161, 2005 | 61 | 2005 |
| Reduction of tensile stress in GaN grown on Si (1 1 1) by inserting a low-temperature AlN interlayer BS Zhang, M Wu, JP Liu, J Chen, JJ Zhu, XM Shen, G Feng, DG Zhao, ... Journal of crystal growth 270 (3-4), 316-321, 2004 | 59 | 2004 |
| Influence of high-temperature AIN buffer thickness on the properties of GaN grown on Si (1 1 1) BS Zhang, M Wu, XM Shen, J Chen, JJ Zhu, JP Liu, G Feng, DG Zhao, ... Journal of crystal growth 258 (1-2), 34-40, 2003 | 52 | 2003 |
| Major deep levels with the same microstructures observed in n-type 4H–SiC and 6H–SiC S Sasaki, K Kawahara, G Feng, G Alfieri, T Kimoto Journal of Applied Physics 109 (1), 2011 | 51 | 2011 |
| New semiconductor alloy GaNAsBi with temperature‐insensitive bandgap M Yoshimoto, W Huang, G Feng, K Oe physica status solidi (b) 243 (7), 1421-1425, 2006 | 50 | 2006 |
| Breakdown characteristics of 15-kV-class 4H-SiC PiN diodes with various junction termination structures H Niwa, G Feng, J Suda, T Kimoto IEEE Transactions on electron devices 59 (10), 2748-2752, 2012 | 47 | 2012 |
| Effects of reactor pressure on GaN nucleation layers and subsequent GaN epilayers grown on sapphire substrate J Chen, SM Zhang, BS Zhang, JJ Zhu, G Feng, XM Shen, YT Wang, ... Journal of crystal growth 254 (3-4), 348-352, 2003 | 47 | 2003 |
| Breakdown characteristics of 12–20 kV-class 4H-SiC PiN diodes with improved junction termination structures H Niwa, G Feng, J Suda, T Kimoto 2012 24th International Symposium on Power Semiconductor Devices and ICs …, 2012 | 46 | 2012 |
| Influence of thermal annealing treatment on the luminescence properties of dilute GaNAs–bismide alloy G Feng, K Oe, M Yoshimoto Japanese Journal of Applied Physics 46 (8L), L764, 2007 | 39 | 2007 |
| Biaxial stress dependence of the electrostimulated near-band-gap spectrum of GaN epitaxial film grown on (0001) sapphire substrate K Wan, AA Porporati, G Feng, H Yang, G Pezzotti Applied physics letters 88 (25), 2006 | 37 | 2006 |
| Nonradiative recombination at threading dislocations in 4H-SiC epilayers studied by micro-photoluminescence mapping G Feng, J Suda, T Kimoto Journal of Applied Physics 110 (3), 2011 | 36 | 2011 |
| Structural and electronic characterization of (2, 3 /3 ) bar-shaped stacking fault in 4H-SiC epitaxial layers M Camarda, A Canino, A La Magna, F La Via, G Feng, T Kimoto, M Aoki, ... Applied Physics Letters 98 (5), 051915-051915-3, 2011 | 31 | 2011 |
| Molecular-beam epitaxy of GaNAsBi layer for temperature-insensitive wavelength emission M Yoshimoto, W Huang, G Feng, Y Tanaka, K Oe Journal of crystal growth 301, 975-978, 2007 | 22 | 2007 |
