Роман Пелещак
Роман Пелещак
Дрогобицький державний педагогічний університет імені Івана Франка
Підтверджена електронна адреса в drohobych.net - Домашня сторінка
НазваПосиланняРік
Time dependence of the output signal morphology for nonlinear oscillator neuron based on Van der Pol model
V Lytvyn, V Vysotska, I Peleshchak, I Rishnyak, R Peleshchak
Int. J. Intell. Syst. Appl.(IJISA) 10 (4), 8-17, 2018
182018
Temperature regimes of formation of nanometer periodic structure of adsorbed atoms in GaAs semiconductors under the action of laser irradiation
RM Peleshchak, OV Kuzyk, OO Dan'kiv
arXiv preprint arXiv:1512.07801, 2015
182015
Baric properties of InAs quantum dots
BV Novikov, GG Zegrya, RM Peleshchak, OO Dan’kiv, VA Gaisin, ...
Semiconductors 42 (9), 1076-1083, 2008
172008
Effect of Bi isovalent dopants on the formation of homogeneous coherently strained InAs quantum dots in GaAs matrices
RM Peleshchak, SK Guba, OV Kuzyk, IV Kurilo, OO Dankiv
Semiconductors 47 (3), 349-353, 2013
162013
Electric properties of the interface quantum dot—matrix
RM Peleshchak, IY Bachynsky
Condensed Matter Physics, 2009
162009
Role of acoustoelectric interaction in the formation of nanoscale periodic structures of adsorbed atoms
RM Peleshchak, II Lazurchak, OV Kuzyk, OO Dan’kiv, GG Zegrya
Semiconductors 50 (3), 314-319, 2016
142016
Барические свойства квантовых точек InAs
БВ Новиков, ГГ Зегря, РМ PПелещак, OO Данькив
Физика и техника полупроводников 42 (9), 1076-1083, 2008
142008
Non-linear model of impurity diffusion in nanoporous materials upon ultrasonic treatment
RM Peleshchak, OV Kuzyk, OO Dan'kiv
arXiv preprint arXiv:1407.2159, 2014
132014
Physical properties of semi-insulating CdTe: Cl single crystals grown from the vapor phase
VD Popovich, GM Grigorovich, PM Peleshchak, PN Tkachuk
Semiconductors 36 (6), 636-640, 2002
12*2002
Электронное перераспределение в окрестности ядра линейной дислокации
РМ Пелещак, БА Лукиянец
Письма в ЖТФ 24 (2), 37-41, 1998
12*1998
Occupation of Electron States and Deformation of the Metal Lattice in the Vicinity of a Boundary Separating Region With Different Mechanical Stresses
IV Stasyuk, RM Peleshchak
Ukrainskii Fizichnii Zhurnal(USSR) 36 (11), 1744-1749, 1991
12*1991
Self-consistent deformation-diffusion spatial redistribution of defects in a semiconductor induced by the electric field
RM Peleshchak, OV Kuzyk
Ukr. J. Phys. 54, 702-706, 2009
112009
Спектр электронов и дырок в квантовой точке InAs, перенормированный деформацией гетеросистемы InAs/GaAs
ОО Данькив, РМ Пелещак
Письма в ЖТФ 31 (16), 33-41, 2005
10*2005
Diffusion-deformation theory of the formation of self-assembled nanoclusters of the implanted impurities
RM Peleshchak, OV Kuzyk, OO Dan'kiv
Journal of Physical Studies 17 (2), 2013
92013
Modulation of the direction of radiation emitted by an InAs/GaAs heterolaser with InAs quantum dots under the influence of acoustic wave
RM Peleshchak, OO Dan’kiv, OV Kuzyk
Ukrainian journal of physics, 68-72, 2012
72012
Barometric Properties of InAs Quantum Dots
BV Novikov, GG Zegrya, RM Peleshchak
Fiz. Tekh. Poluprovodn, 1094-1101, 2008
72008
Investigation of photoluminescence and electroconductivity of ZnTe grown in hydrogen atmosphere
DV Korbutyak, ND Vakhnyak, DY Tsyutsyura, OM Pyigur, RM Peleshchak
Ukrayins' kij Fyizichnij Zhurnal (Kyiv) 52 (4), 378-381, 2007
72007
Interaction between a surface acoustic wave and adsorbed atoms
RM Peleshchak, MY Seneta
arXiv preprint arXiv:1612.07221, 2016
62016
The influence of ultrasound on formation of self-organized uniform nanoclusters
RM Peleshchak, OV Kuzyk, OO Dan'kiv
Journal of Nano-and Electronic Physics 8 (2), 2014-1, 2016
6*2016
The compression of the input images in neural network that using method diagonalization the matrices of synaptic weight connections
V Lytvyn, I Peleshchak, R Peleshchak
2017 2nd International Conference on Advanced Information and Communication …, 2017
52017
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