Au-TiB x-n-6 H-SiC Schottky barrier diodes: Specific features of charge transport in rectifying and nonrectifying contacts OA Ageev, AE Belyaev, NS Boltovets, VN Ivanov, RV Konakova, ...
Semiconductors 43 (7), 865-871, 2009
156 2009 Crack detection and analyses using resonance ultrasonic vibrations in full-size crystalline silicon wafers A Belyaev, O Polupan, W Dallas, S Ostapenko, D Hess, J Wohlgemuth
Applied physics letters 88 (11), 111907, 2006
88 2006 Карбид кремния: технология, свойства, применение ОА Агеев, АЕ Беляев, НС Болтовец, ВС Киселев, РВ Конакова, ...
ИСМа, 2010
80 2010 Separation of hot-electron and self-heating effects in two-dimensional AlGaN/GaN-based conducting channels SA Vitusevich, SV Danylyuk, N Klein, MV Petrychuk, AY Avksentyev, ...
Applied physics letters 82 (5), 748-750, 2003
66 2003 Effects of γ‐irradiation on AlGaN/GaN‐based HEMTs SA Vitusevich, N Klein, AE Belyaev, SV Danylyuk, MV Petrychuk, ...
physica status solidi (a) 195 (1), 101-105, 2003
53 2003 Porous biomorphic silicon carbide ceramics coated with hydroxyapatite as prospective materials for bone implants O Gryshkov, NI Klyui, VP Temchenko, VS Kyselov, A Chatterjee, ...
Materials Science and Engineering: C 68, 143-152, 2016
47 2016 Mechanism of contact resistance formation in ohmic contacts with high dislocation density AV Sachenko, AE Belyaev, NS Boltovets, RV Konakova, YY Kudryk, ...
Journal of applied physics 111 (8), 083701, 2012
46 2012 Resonance ultrasonic vibration diagnostics of elastic stress in full-size silicon wafers A Belyaev, O Polupan, S Ostapenko, D Hess, JP Kalejs
Semiconductor science and technology 21 (3), 254, 2006
42 2006 Current–voltage instabilities in GaN/AlGaN resonant tunnelling structures CT Foxon, SV Novikov, AE Belyaev, LX Zhao, O Makarovsky, DJ Walker, ...
physica status solidi (c), 2389-2392, 2003
40 2003 Substrate effects on the strain relaxation in GaN/AlN short-period superlattices V Kladko, A Kuchuk, P Lytvyn, O Yefanov, N Safriuk, A Belyaev, YI Mazur, ...
Nanoscale research letters 7 (1), 1-9, 2012
38 2012 Excess low-frequency noise in AlGaN/GaN-based high-electron-mobility transistors SA Vitusevich, SV Danylyuk, N Klein, MV Petrychuk, VN Sokolov, ...
Applied physics letters 80 (12), 2126-2128, 2002
37 2002 Internal strains and crystal structure of the layers in AlGaN/GaN heterostructures grown on a sapphire substrate VP Kladko, AF Kolomys, MV Slobodian, VV Strelchuk, VG Raycheva, ...
Journal of applied physics 105 (6), 063515, 2009
36 2009 Mechanism of mobility increase of the two-dimensional electron gas in AM Kurakin, SA Vitusevich, SV Danylyuk, H Hardtdegen, N Klein, ...
Journal of applied physics 103 (8), 083707, 2008
36 2008 Фазы внедрения в технологии полупроводниковых приборов и СБИС ОА Агеев, АЕ Беляев, НС Болтовец, РВ Конакова, ВВ Миленин, ...
Харьков: НТК «Институт монокристаллов, 2008
33 2008 Mechanism of dislocation-governed charge transport in schottky diodes based on gallium nitride AE Belyaev, NS Boltovets, VN Ivanov, VP Klad’ko, RV Konakova, ...
Semiconductors 42 (6), 689-693, 2008
32 2008 Mechanisms of current formation in resonant tunneling MV Petrychuk, AE Belyaev, AM Kurakin, SV Danylyuk, N Klein, ...
Applied physics letters 91 (22), 222112, 2007
31 2007 Noise and transport characterization of single molecular break junctions with individual molecule VA Sydoruk, D Xiang, SA Vitusevich, MV Petrychuk, A Vladyka, Y Zhang, ...
Journal of applied physics 112 (1), 014908, 2012
30 2012 Nonlinear charging effect of quantum dots in a p− i− n diode G Kießlich, A Wacker, E Schöll, SA Vitusevich, AE Belyaev, SV Danylyuk, ...
Physical Review B 68 (12), 125331, 2003
30 2003 Modulation of the luminescence spectra of InAs self-assembled quantum dots by resonant tunneling through a quantum well A Patane, A Polimeni, L Eaves, PC Main, M Henini, AE Belyaev, ...
Physical Review B 62 (20), 13595, 2000
30 2000 Hot-electron transport in BA Danilchenko, SE Zelensky, E Drok, SA Vitusevich, SV Danylyuk, ...
Applied physics letters 85 (22), 5421-5423, 2004
29 2004 