Belyaev A.E.
Belyaev A.E.
Institute of semiconductor physics
Підтверджена електронна адреса в isp.kiev.ua
НазваПосиланняРік
Au-TiB x -n-6H-SiC Schottky barrier diodes: Specific features of charge transport in rectifying and nonrectifying contacts
OA Ageev, AE Belyaev, NS Boltovets, VN Ivanov, RV Konakova, ...
Semiconductors 43 (7), 865-871, 2009
1522009
Crack detection and analyses using resonance ultrasonic vibrations in full-size crystalline silicon wafers
A Belyaev, O Polupan, W Dallas, S Ostapenko, D Hess, J Wohlgemuth
Applied Physics Letters 88 (11), 111907, 2006
822006
Separation of hot-electron and self-heating effects in two-dimensional AlGaN/GaN-based conducting channels
SA Vitusevich, SV Danylyuk, N Klein, MV Petrychuk, AY Avksentyev, ...
Applied physics letters 82 (5), 748-750, 2003
602003
Карбид кремния: технология, свойства, применение
ОА Агеев, АЕ Беляев, НС Болтовец, ВС Киселев, РВ Конакова, ...
ИСМа, 2010
562010
Effects of γ‐irradiation on AlGaN/GaN‐based HEMTs
SA Vitusevich, N Klein, AE Belyaev, SV Danylyuk, MV Petrychuk, ...
physica status solidi (a) 195 (1), 101-105, 2003
482003
Mechanism of contact resistance formation in ohmic contacts with high dislocation density
AV Sachenko, AE Belyaev, NS Boltovets, RV Konakova, YY Kudryk, ...
Journal of applied physics 111 (8), 083701, 2012
432012
Resonance ultrasonic vibration diagnostics of elastic stress in full-size silicon wafers
A Belyaev, O Polupan, S Ostapenko, D Hess, JP Kalejs
Semiconductor science and technology 21 (3), 254, 2006
412006
Substrate effects on the strain relaxation in GaN/AlN short-period superlattices
V Kladko, A Kuchuk, P Lytvyn, O Yefanov, N Safriuk, A Belyaev, YI Mazur, ...
Nanoscale research letters 7 (1), 1-9, 2012
372012
Excess low-frequency noise in AlGaN/GaN-based high-electron-mobility transistors
SA Vitusevich, SV Danylyuk, N Klein, MV Petrychuk, VN Sokolov, ...
Applied physics letters 80 (12), 2126-2128, 2002
372002
Internal strains and crystal structure of the layers in AlGaN/GaN heterostructures grown on a sapphire substrate
VP Kladko, AF Kolomys, MV Slobodian, VV Strelchuk, VG Raycheva, ...
Journal of applied physics 105 (6), 063515, 2009
362009
Mechanism of mobility increase of the two-dimensional electron gas in heterostructures under small dose gamma irradiation
AM Kurakin, SA Vitusevich, SV Danylyuk, H Hardtdegen, N Klein, ...
Journal of applied physics 103 (8), 083707, 2008
342008
Current–voltage instabilities in GaN/AlGaN resonant tunnelling structures
CT Foxon, SV Novikov, AE Belyaev, LX Zhao, O Makarovsky, DJ Walker, ...
physica status solidi (c), 2389-2392, 2003
342003
Porous biomorphic silicon carbide ceramics coated with hydroxyapatite as prospective materials for bone implants
O Gryshkov, NI Klyui, VP Temchenko, VS Kyselov, A Chatterjee, ...
Materials Science and Engineering: C 68, 143-152, 2016
332016
Фазы внедрения в технологии полупроводниковых приборов и СБИС
ОА Агеев, АЕ Беляев, НС Болтовец, РВ Конакова, ВВ Миленин, ...
Харьков: НТК «Институт монокристаллов, 2008
332008
Modulation of the luminescence spectra of InAs self-assembled quantum dots by resonant tunneling through a quantum well
A Patane, A Polimeni, L Eaves, PC Main, M Henini, AE Belyaev, ...
Physical Review B 62 (20), 13595, 2000
302000
Mechanisms of current formation in resonant tunneling heterostructures
MV Petrychuk, AE Belyaev, AM Kurakin, SV Danylyuk, N Klein, ...
Applied physics letters 91 (22), 222112, 2007
292007
Noise and transport characterization of single molecular break junctions with individual molecule
VA Sydoruk, D Xiang, SA Vitusevich, MV Petrychuk, A Vladyka, Y Zhang, ...
Journal of applied physics 112 (1), 014908, 2012
282012
Mechanism of dislocation-governed charge transport in schottky diodes based on gallium nitride
AE Belyaev, NS Boltovets, VN Ivanov, VP Klad’ko, RV Konakova, ...
Semiconductors 42 (6), 689-693, 2008
282008
Hot-electron transport in two-dimensional conducting channels
BA Danilchenko, SE Zelensky, E Drok, SA Vitusevich, SV Danylyuk, ...
Applied physics letters 85 (22), 5421-5423, 2004
282004
Resonance and current instabilities in AlN/GaN resonant tunnelling diodes
AE Belyaev, O Makarovsky, DJ Walker, L Eaves, CT Foxon, SV Novikov, ...
Physica E: Low-dimensional Systems and Nanostructures 21 (2-4), 752-755, 2004
282004
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