Belyaev A.E.
Belyaev A.E.
Institute of semiconductor physics
Підтверджена електронна адреса в isp.kiev.ua
НазваПосиланняРік
Au-TiB x -n-6H-SiC Schottky barrier diodes: Specific features of charge transport in rectifying and nonrectifying contacts
OA Ageev, AE Belyaev, NS Boltovets, VN Ivanov, RV Konakova, ...
Semiconductors 43 (7), 865-871, 2009
1502009
Crack detection and analyses using resonance ultrasonic vibrations in full-size crystalline silicon wafers
A Belyaev, O Polupan, W Dallas, S Ostapenko, D Hess, J Wohlgemuth
Applied Physics Letters 88 (11), 111907, 2006
832006
Separation of hot-electron and self-heating effects in two-dimensional AlGaN/GaN-based conducting channels
SA Vitusevich, SV Danylyuk, N Klein, MV Petrychuk, AY Avksentyev, ...
Applied physics letters 82 (5), 748-750, 2003
562003
Карбид кремния: технология, свойства, применение
ОА Агеев, АЕ Беляев, НС Болтовец, ВС Киселев, РВ Конакова, ...
ИСМа, 2010
522010
Effects of γ‐irradiation on AlGaN/GaN‐based HEMTs
SA Vitusevich, N Klein, AE Belyaev, SV Danylyuk, MV Petrychuk, ...
physica status solidi (a) 195 (1), 101-105, 2003
462003
Resonance ultrasonic vibration diagnostics of elastic stress in full-size silicon wafers
A Belyaev, O Polupan, S Ostapenko, D Hess, JP Kalejs
Semiconductor Science and Technology 21 (3), 254, 2006
422006
Mechanism of contact resistance formation in ohmic contacts with high dislocation density
AV Sachenko, AE Belyaev, NS Boltovets, RV Konakova, YY Kudryk, ...
Journal of applied physics 111 (8), 083701, 2012
412012
Excess low-frequency noise in AlGaN/GaN-based high-electron-mobility transistors
SA Vitusevich, SV Danylyuk, N Klein, MV Petrychuk, VN Sokolov, ...
Applied physics letters 80 (12), 2126-2128, 2002
372002
Substrate effects on the strain relaxation in GaN/AlN short-period superlattices
V Kladko, A Kuchuk, P Lytvyn, O Yefanov, N Safriuk, A Belyaev, YI Mazur, ...
Nanoscale research letters 7 (1), 289, 2012
352012
Internal strains and crystal structure of the layers in AlGaN/GaN heterostructures grown on a sapphire substrate
VP Kladko, AF Kolomys, MV Slobodian, VV Strelchuk, VG Raycheva, ...
Journal of applied physics 105 (6), 063515, 2009
352009
Фазы внедрения в технологии полупроводниковых приборов и СБИС
ОА Агеев, АЕ Беляев, НС Болтовец, РВ Конакова, ВВ Миленин, ...
Харьков: НТК «Институт монокристаллов, 2008
352008
Current–voltage instabilities in GaN/AlGaN resonant tunnelling structures
CT Foxon, SV Novikov, AE Belyaev, LX Zhao, O Makarovsky, DJ Walker, ...
physica status solidi (c), 2389-2392, 2003
342003
Mechanism of mobility increase of the two-dimensional electron gas in heterostructures under small dose gamma irradiation
AM Kurakin, SA Vitusevich, SV Danylyuk, H Hardtdegen, N Klein, ...
Journal of applied physics 103 (8), 083707, 2008
302008
Mechanisms of current formation in resonant tunneling heterostructures
MV Petrychuk, AE Belyaev, AM Kurakin, SV Danylyuk, N Klein, ...
Applied physics letters 91 (22), 222112, 2007
302007
Modulation of the luminescence spectra of InAs self-assembled quantum dots by resonant tunneling through a quantum well
A Patane, A Polimeni, L Eaves, PC Main, M Henini, AE Belyaev, ...
Physical Review B 62 (20), 13595, 2000
302000
Porous biomorphic silicon carbide ceramics coated with hydroxyapatite as prospective materials for bone implants
O Gryshkov, NI Klyui, VP Temchenko, VS Kyselov, A Chatterjee, ...
Materials Science and Engineering: C 68, 143-152, 2016
292016
Mechanism of dislocation-governed charge transport in schottky diodes based on gallium nitride
AE Belyaev, NS Boltovets, VN Ivanov, VP Klad’ko, RV Konakova, ...
Semiconductors 42 (6), 689-693, 2008
282008
Hot-electron transport in two-dimensional conducting channels
BA Danilchenko, SE Zelensky, E Drok, SA Vitusevich, SV Danylyuk, ...
Applied physics letters 85 (22), 5421-5423, 2004
282004
Resonant tunneling and photoluminescence spectroscopy in quantum wells containing self-assembled quantum dots
A Patane, A Polimeni, L Eaves, PC Main, M Henini, YV Dubrovskii, ...
Journal of Applied Physics 88 (4), 2005-2012, 2000
282000
Sensitivity of resorcinarene films towards aliphatic alcohols
IA Koshets, ZI Kazantseva, AE Belyaev, VI Kalchenko
Sensors and Actuators B: Chemical 140 (1), 104-108, 2009
272009
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