Handbook of Advanced Electronic and Photonic Materials and Devices V Gopalan, NA Sanford, JA Aust, K Kitamura, Y Furukawa
Ferroelectrics and Dielectrics, 2001
1128 * 2001 Mechanism for spontaneous growth of GaN nanowires with molecular beam epitaxy KA Bertness, A Roshko, LM Mansfield, TE Harvey, NA Sanford
Journal of Crystal Growth 310 (13), 3154-3158, 2008
210 2008 Spontaneously grown GaN and AlGaN nanowires KA Bertness, A Roshko, NA Sanford, JM Barker, AV Davydov
Journal of Crystal Growth 287 (2), 522-527, 2006
199 2006 Yb/Er-codoped and Yb-doped waveguide lasers in phosphate glass DL Veasey, DS Funk, PM Peters, NA Sanford, GE Obarski, N Fontaine, ...
Journal of non-crystalline solids 263, 369-381, 2000
186 2000 High-Q GaN nanowire resonators and oscillators SM Tanner, JM Gray, CT Rogers, KA Bertness, NA Sanford
Applied Physics Letters 91 (20), 2007
156 2007 GaN nanowires grown by molecular beam epitaxy KA Bertness, NA Sanford, AV Davydov
IEEE Journal of selected topics in quantum electronics 17 (4), 847-858, 2010
155 2010 Catalyst-free growth of GaN nanowires KA Bertness, NA Sanford, JM Barker, JB Schlager, A Roshko, ...
Journal of electronic materials 35, 576-580, 2006
149 2006 Nucleation conditions for catalyst-free GaN nanowires KA Bertness, A Roshko, LM Mansfield, TE Harvey, NA Sanford
Journal of crystal growth 300 (1), 94-99, 2007
148 2007 Steady-state and time-resolved photoluminescence from relaxed and strained GaN nanowires grown by catalyst-free molecular-beam epitaxy JB Schlager, KA Bertness, PT Blanchard, LH Robins, A Roshko, ...
Journal of applied physics 103 (12), 2008
145 2008 Controlled nucleation of GaN nanowires grown with molecular beam epitaxy KA Bertness, AW Sanders, DM Rourke, TE Harvey, A Roshko, ...
Advanced functional materials 20 (17), 2911-2915, 2010
131 2010 Arrays of distributed-Bragg-reflector waveguide lasers at 1536 nm in Yb/Er codoped phosphate glass DL Veasey, DS Funk, NA Sanford, JS Hayden
Applied Physics Letters 74 (6), 789-791, 1999
131 1999 Steady-state and transient photoconductivity in c-axis GaN nanowires grown by nitrogen-plasma-assisted molecular beam epitaxy NA Sanford, PT Blanchard, KA Bertness, L Mansfield, JB Schlager, ...
Journal of Applied Physics 107 (3), 2010
128 2010 Refractive index study of films grown on sapphire substrates NA Sanford, LH Robins, AV Davydov, A Shapiro, DV Tsvetkov, ...
Journal of applied physics 94 (5), 2980-2991, 2003
124 2003 Effect of growth orientation and diameter on the elasticity of GaN nanowires. A combined in situ TEM and atomistic modeling investigation RA Bernal, R Agrawal, B Peng, KA Bertness, NA Sanford, AV Davydov, ...
Nano letters 11 (2), 548-555, 2011
108 2011 Effect of AlN buffer layer properties on the morphology and polarity of GaN nanowires grown by molecular beam epitaxy MD Brubaker, I Levin, AV Davydov, DM Rourke, NA Sanford, VM Bright, ...
Journal of Applied Physics 110 (5), 2011
104 2011 Highly selective GaN-nanowire/TiO2-nanocluster hybrid sensors for detection of benzene and related environment pollutants GS Aluri, A Motayed, AV Davydov, VP Oleshko, KA Bertness, NA Sanford, ...
Nanotechnology 22 (29), 295503, 2011
103 2011 Z‐propagating waveguide lasers in rare‐earth‐doped Ti:LiNbO3 J Amin, JA Aust, NA Sanford
Applied physics letters 69 (25), 3785-3787, 1996
102 1996 On-chip optical interconnects made with gallium nitride nanowires MD Brubaker, PT Blanchard, JB Schlager, AW Sanders, A Roshko, ...
Nano letters 13 (2), 374-377, 2013
98 2013 Optical waveguides in LiTaO3 formed by proton exchange WB Spillman, NA Sanford, RA Soref
Optics letters 8 (9), 497-498, 1983
92 1983 Optimization of the Čerenkov sum‐frequency generation in proton‐exchanged Mg:LiNbO3 channel waveguides NA Sanford, JM Connors
Journal of applied physics 65 (4), 1429-1437, 1989
90 1989